ADVANCE TECHNICAL INFORMATION
IXKC 40N60C
CoolMOS Power MOSFET
ISOPLUS220TM
V
I
R
= 600 V
= 28 A
= 96 mΩ
DSS
D25
Electrically Isolated Back Surface
DS(on)
N-Channel Enhancement Mode
Low RDS(on), High Voltage,, MOSFET
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Ratings
VDSS
VGS
T
= 25°C to 150°C
600
V
V
J
Continuous
±20
G
D
S
ID25
ID90
T
T
= 25°C; Note 1
= 90°C, Note 1
28
19
A
A
C
C
Isolated back surface*
ID(RMS)
Package lead current limit
45
A
G = Gate,
S = Source
D = Drain,
EAS
EAR
I
= 10A, T = 25°C
690
1
mJ
mJ
C
Io = 20A
o
* Patent pending
PD
T
= 25°C
250
W
C
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +125
l Silicon chip on Direct-Copper-Bond
substrate
TL
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
°C
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
VISOL
FC
2500
V~
11 ... 65 / 2.4 ...11 N/lb
ND
l 2 generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
Weight
3
g
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Applications
Symbol
RDS(on)
Test Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
J
min. typ. max.
V
V
= 10 V, I = I , Note 3
= 10 V, I = I , Note 3 T = 125°C
80
230
96 mΩ
mΩ
l Inductive Heating
GS
GS
D
D90
D
D90
J
Advantages
VGS(th)
IDSS
V
V
= V , I = 2 mA
3.5
5.5
2
V
DS
DS
GS
D
l Easy assembly: no screws or isolation
foils required
l Space savings
= V
= 0 V
T = 25°C
µA
µA
DSS
J
V
T = 125°C
20
GS
J
l High power density
IGSS
V
= ±20 V , V = 0
±200
nA
GS
DC
DS
COOLMOS is a trademark of Infineon
Technolgy
98847 (6/01)
© 2001 IXYS All rights reserved
