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IXKC19N60C5

型号：

IXKC19N60C5

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

155 K

下载PDF手册
Advanced Technical Information  
IXKC 19N60C5  
CoolMOS™ 1) Power MOSFET  
ID25  
VDSS  
=
19A  
= 600V  
RDS(on) max = 0.125Ω  
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
ISOPLUS220TM  
D
G
G
D
S
q
isolated back  
surface  
S
E72873  
Features  
MOSFET  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 30 pF)  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- high blocking capability  
- lowest resistance  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
19  
15  
A
A
EAS  
EAR  
single pulse  
repetitive  
708  
1.2  
mJ  
mJ  
ID = 11 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
Conditions  
Characteristic Values  
due to reduced chip thickness  
• Enhanced total power density  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
RDSon  
VGS = 10 V; ID = 16 A  
110  
3
125  
mΩ  
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
VGS(th)  
IDSS  
VDS = VGS; ID = 1.1 mA  
VDS = 600 V; VGS = 0 V  
2.5  
3.5  
2
V
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
20  
• Inductive heating  
• PDP and LCD adapter  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
70  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
2500  
120  
pF  
pF  
Advantages  
Qg  
Qgs  
Qgd  
53  
12  
18  
nC  
nC  
nC  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A  
• High power density  
• High reliability  
td(on)  
tr  
td(off)  
tf  
15  
5
50  
5
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 16 A; RG = 3.3 Ω  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
RthJC  
0.95 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209b  
1 - 4  
Advanced Technical Information  
IXKC 19N60C5  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
16  
A
VSD  
IF = 16 A; VGS = 0 V  
0.9  
1.2  
V
trr  
QRM  
IRM  
430  
9
42  
ns  
µC  
A
IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
storage  
-55...+150  
-55...+150  
°C  
°C  
VISOL  
FC  
RMS leads-to-tab, 50/60 Hz, f = 1 minute  
mounting force  
2500  
V~  
11-65 / 2.4-11 N/lb  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
with heatsink compound  
0.3  
2.7  
RthCH  
K/W  
g
Weight  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209b  
2 - 4  
Advanced Technical Information  
IXKC 19N60C5  
ISOPLUS220TM Outline  
INCHES  
MILLIMETERS  
A
E
SYM  
MIN  
.157  
.098  
.035  
.049  
.093  
.028  
.591  
.472  
.394  
.295  
MAX  
.197  
.118  
.051  
.065  
.100  
.039  
.630  
.512  
.433  
.335  
MIN  
4.00  
2.50  
0.90  
1.25  
2.35  
0.70  
15.00  
12.00  
10.00  
7.50  
MAX  
A
A2  
b
b2  
b4  
c
D
D1  
E
E1  
e
5.00  
3.00  
1.30  
1.65  
2.55  
1.00  
16.00  
13.00  
11.00  
8.50  
* Note 1  
.100 BASIC  
2.55 BASIC  
.512  
.118  
.571  
.138  
13.00  
3.00  
42.5  
14.50  
3.50  
47.5  
L
L1  
T
2X b4  
NOTE:  
1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3.  
2. This drawing will meet dimensional requirement of JEDEC SS  
Product OutlineTO-273 except D and D1 dimension.  
3
1
2
2X b2  
3X b  
c
2X e  
A2  
50  
120  
140  
120  
100  
80  
TJ = 125°C  
8 V  
10 V  
6 V  
VGS =  
20 V  
7 V  
TJ = 25°C  
105  
90  
75  
60  
45  
30  
15  
0
VGS  
=
8 V  
10 V  
20 V  
40  
30  
20  
10  
0
5.5 V  
7 V  
5 V  
60  
6 V  
40  
5.5 V  
4.5 V  
5 V  
20  
4.5 V  
0
0
40  
80  
120  
160  
0
5
10  
15  
20  
0
5
10  
15  
20  
TC [°C]  
V
[V]  
V DS [V]  
DS  
Fig. 1 Power dissipation  
Fig. 2 Typ. output characteristics  
Fig. 3 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209b  
3 - 4  
Advanced Technical Information  
IXKC 19N60C5  
0.5  
0.4  
0.3  
0.2  
0.1  
0.4  
120  
80  
40  
0
VDS > 2·RDS(on) max · ID  
TJV = 150°C  
ID = 16 A  
VGS = 10 V  
6.5 V  
7 V  
5.5 V  
6 V  
25 °C  
20 V  
0.3  
0.2  
VDS  
= 5 V  
TJ  
=
150 °C  
typ  
98 %  
0.1  
0
0
0
10  
20  
30  
40  
50  
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
I D [A]  
T
j [°C]  
V
[V]  
GS  
Fig. 4 Typ. drain-source on-state resistance  
Fig. 5 Drain-source on-state resistance  
Fig. 6 Typ. transfer characteristics  
10 2  
10 1  
10 0  
10 -1  
10 5  
10 4  
10 3  
10 2  
10 1  
10 0  
10  
ID = 16 A pulsed  
25 °C, 98%  
VGS = 0 V  
f = 1 MHz  
9
8
7
6
5
4
3
2
1
0
150 °C, 98%  
20 V  
40 0V  
25 °C  
VDS = 120 V  
150 °C  
=
Ciss  
TJ  
Coss  
Crss  
0
0.5  
1
1.5  
2
0
10  
20  
30  
40  
50  
60  
0
50  
100  
[V]  
150  
200  
Q
gate [nC]  
V
[V]  
SD  
V
DS  
Fig. 7 Forward characteristic  
of reverse diode  
Fig. 8 Typ. gate charge  
Fig. 9 Typ. capacitances  
800  
600  
400  
200  
0
700  
ID = 11 A  
ID = 0.25 mA  
660  
620  
580  
540  
-60  
-20  
20  
60  
100  
140  
180  
20  
60  
100  
140  
180  
T
j [°C]  
T
j [°C]  
Fig. 10 Avalanche energy  
Fig. 11 Drain-source breakdown voltage  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209b  
4 - 4  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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