ADVANCE TECHNICAL INFORMATION
IXKC 13N80C
CoolMOS Power MOSFET
ISOPLUS220TM
VDSS
ID25
= 800 V
= 13 A
Electrically Isolated Back Surface
RDS(on) =290 mΩ
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET
ISOPLUS 220TM
Symbol
Test Conditions
Maximum Ratings
VDSS
VGS
TJ = 25°C to 150°C
800
20
V
V
Continuous
G
ID25
ID90
TC = 25°C; Note 1
TC = 90°C, Note 1
13
9
A
A
D
S
Isolated back surface*
D = Drain,
ID(RMS)
Package lead current limit
45
A
G = Gate,
EAS
EAR
I
= 4A, TC = 25°C
670
0.5
mJ
mJ
S = Source
IDD = 10A
* Patent pending
dv/dt
V
< VDSS, IF ≤ 17 A, TVJ = 150°C
6
V/ns
dSD/Sdt = 100 A/µs
PD
TC = 25°C
125
W
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +125
°C
°C
°C
l sSuilbicsotnractehip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TL
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
°C
RD generation CoolMOS power MOSFET
l -3High blocking capability
- Low on resistance
VISOL
FC
2500
V~
11 ... 65 / 2.4 ...11 N/lb
- Avalanche rated for unclamped inductive
switching (UIS)
Weight
2
g
l cLhoiwp tthheicrkmnaelsrsesistance due to reduced
l Low drain to tab capacitance(<30pF)
Applications
Symbol
RDS(on)
Test Conditions
Characteristic Values
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, I = ID90, Note 3
250
550
290 mΩ
mΩ
l Inductive Heating
VGS = 10 V, IDD = ID90, Note 3 TJ = 125°C
Advantages
VGS(th)
IDSS
VDS = VGS, ID = 1 mA
2
4
V
l Easy assembly: no screws or isolation
foils required
VDS = V
T = 25°C
25 µA
µA
VGS = 0DVSS
TJJ = 125°C
125
l Space savings
l High power density
IGSS
VGS = 20 VDC, VDS = 0
100
nA
COOLMOS is a trademark of Infineon
Technology.
98865 (11/01)
© 2001 IXYS All rights reserved
