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IXKC23N60C5

型号：

IXKC23N60C5

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

242 K

下载PDF手册
IXKC 23N60C5  
CoolMOS™ 1) Power MOSFET  
ID25  
VDSS  
= 23 A  
= 600 V  
RDS(on) max = 0.1 Ω  
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
ISOPLUS220TM  
D
G
G
D
S

isolated back  
surface  
S
E72873  
Preliminary data  
Features  
MOSFET  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 30 pF)  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- high blocking capability  
- lowest resistance  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
23  
16  
A
A
EAS  
EAR  
single pulse  
repetitive  
800  
1.2  
mJ  
mJ  
ID = 11 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
Conditions  
Characteristic Values  
due to reduced chip thickness  
• Enhanced total power density  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
RDSon  
VGS = 10 V; ID = 18 A  
90  
3
100  
mW  
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
VGS(th)  
IDSS  
VDS = VGS; ID = 1.2 mA  
VDS = 600 V; VGS = 0 V  
2.5  
3.5  
5
V
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
50  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
80  
nA  
• Inductive heating  
• PDP and LCD adapter  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
2800  
130  
pF  
pF  
Advantages  
Qg  
Qgs  
Qgd  
60  
14  
20  
nC  
nC  
nC  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
• High power density  
• High reliability  
VGS = 0 to 10 V; VDS = 400 V; ID = 18 A  
td(on)  
tr  
td(off)  
tf  
10  
5
60  
5
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 18 A; RG = 3.3 Ω  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
RthJC  
0.85 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100303c  
1 - 4  
IXKC 23N60C5  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
16  
A
VSD  
IF = 16 A; VGS = 0 V  
0.9  
1.2  
V
trr  
QRM  
IRM  
450  
12  
70  
ns  
µC  
A
IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
storage  
-55...+150  
-55...+150  
°C  
°C  
VISOL  
FC  
RMS leads-to-tab, 50/60 Hz, f = 1 minute  
mounting force  
2500  
V~  
11-65 / 2.4-11 N/lb  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
with heatsink compound  
0.28  
3.1  
RthCH  
K/W  
g
Weight  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100303c  
2 - 4  
IXKC 23N60C5  
ISOPLUS220TM Outline  
INCHES  
MILLIMETERS  
A
E
SYM  
MIN  
.157  
.098  
.035  
.049  
.093  
.028  
.591  
.472  
.394  
.295  
MAX  
.197  
.118  
.051  
.065  
.100  
.039  
.630  
.512  
.433  
.335  
MIN  
4.00  
2.50  
0.90  
1.25  
2.35  
0.70  
15.00  
12.00  
10.00  
7.50  
MAX  
A
A2  
b
b2  
b4  
c
D
D1  
E
E1  
e
5.00  
3.00  
1.30  
1.65  
2.55  
1.00  
16.00  
13.00  
11.00  
8.50  
* Note 1  
.100 BASIC  
2.55 BASIC  
.512  
.118  
.571  
.138  
13.00  
3.00  
42.5  
14.50  
3.50  
47.5  
L
L1  
T
2X b4  
NOTE:  
1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3.  
2. This drawing will meet dimensional requirement of JEDEC SS  
Product OutlineTO-273 except D and D1 dimension.  
3
1
2
2X b2  
3X b  
c
2X e  
A2  
120  
105  
90  
50  
160  
140  
120  
100  
80  
7 V  
10 V  
8 V  
8 V  
TJ = 25°C  
TJ = 150°C  
10 V  
VGS  
=
20 V  
20 V  
=
VGS  
6 V  
5.5 V  
40  
30  
20  
10  
0
7 V  
75  
5 V  
60  
6 V  
45  
60  
5.5 V  
4.5 V  
30  
40  
5 V  
15  
20  
4.5 V  
0
0
0
0
40  
80  
120  
160  
5
10  
15  
20  
0
5
10  
V DS [V]  
15  
20  
TC [°C]  
V
DS [V]  
Fig. 1 Power dissipation  
Fig. 2 Typ. output characteristics  
Fig. 3 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100303c  
3 - 4  
IXKC 23N60C5  
160  
120  
80  
0.5  
0.4  
0.3  
0.2  
0.1  
0.3  
0.25  
0.2  
TJV = 150°C  
ID = 18 A  
VDS > 2·RDS(on) max · ID  
VGS = 10 V  
5.5 V  
25 °C  
6 V  
6.5 V  
7 V  
5 V  
=
VDS  
20 V  
0.15  
0.1  
98 %  
50 °C  
TJ =  
typ  
40  
0.05  
0
0
0
0
10  
20  
30  
40  
50  
-60  
-20  
20  
60  
j [°C]  
100  
140  
180  
0
2
4
6
8
10  
I D [A]  
T
V
[V]  
GS  
Fig. 4 Typ. drain-source on-state  
resistance characteristics  
Fig. 5 Drain-source on-state resistance  
Fig. 6 Typ. transfer characteristics  
10 2  
10 1  
10 0  
10 -1  
10 5  
10 4  
10 3  
10 2  
10 1  
10 0  
12  
10  
8
25 °C, 98%  
ID = 18 A pulsed  
VGS = 0 V  
f = 1 MHz  
150 °C, 98%  
25 °C  
VDS = 120 V  
TJ =150 °C  
Ciss  
1 20 V  
40 0V  
6
Coss  
4
2
Crss  
0
0
0.5  
1
1.5  
2
0
50  
100  
[V]  
150  
200  
0
10  
20  
30  
40  
50  
60  
Q
gate [nC]  
V
[V]  
V
SD  
DS  
Fig. 7 Forward characteristic  
of reverse diode  
Fig. 8 Typ. gate charge  
Fig. 9 Typ. capacitances  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1000  
750  
500  
250  
0
700  
ID = 11 A  
ID = 0.25 mA  
660  
620  
580  
540  
1
10  
100  
1000  
10000  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
tp [ms]  
T
j [°C]  
T
j [°C]  
Fig. 10 Avalanche energy  
Fig. 11 Drain-source breakdown voltage  
Fig. 12 Typ. transient thermal  
impedance with heat transfer paste  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20100303c  
4 - 4  
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