Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
ID25
VDSS
=
15 A
= 600 V
RDS(on) max = 0.165 Ω
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
ISOPLUS220TM
D
G
G
D
S
q
isolated back
surface
S
E72873
Features
MOSFET
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C
600
20
V
VGS
V
ID25
ID90
TC = 25°C
TC = 90°C
15
11
A
A
EAS
EAR
single pulse
repetitive
522
0.79
mJ
mJ
ID = 7.9 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Symbol
Conditions
Characteristic Values
due to reduced chip thickness
• Enhanced total power density
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
RDSon
VGS = 10 V; ID = 12 A
150
3
165
mΩ
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
VGS(th)
IDSS
VDS = VGS; ID = 0.79 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
1
V
TVJ = 25°C
TVJ = 125°C
µA
µA
10
IGSS
VGS
=
20 V; VDS = 0 V
100
52
nA
• Inductive heating
• PDP and LCD adapter
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
2000
100
pF
pF
Advantages
Qg
Qgs
Qgd
40
9
13
nC
nC
nC
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
td(on)
tr
td(off)
tf
12
5
50
5
ns
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 12 A; RG = 3.3 Ω
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
RthJC
1.1 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
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