ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET
IXKG 25N80C
VDSS
ID25
= 800 V
= 25 A
ISO264TM
Electrically Isolated Back Surface
RDS(on) =150 mΩ
N-Channel Enhancement Mode
Low RDS(on), High Voltage MOSFET
ISO264TM
Symbol
Test Conditions
Maximum Ratings
VDSS
VGS
TJ = 25°C to 150°C
800
20
V
V
Continuous
ID25
ID90
TC = 25°C
TC = 90°C
25
9
A
A
G
D
(TAB)
S
ID(RMS)
Package lead current limit
45
A
G = Gate,
S = Source
D = Drain,
EAS
EAR
Io = 10A, TC = 25°C
Io = 20A
690
0.5
mJ
mJ
dv/dt
VDS < VDSS, IF ≤ 17 A, TVJ = 150°C
dIR/dt = 100 A/µs
6
V/ns
* Patent pending
PD
TC = 25°C
250
W
Features
TJ
-55 ... +150
150
°C
°C
°C
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
TJM
Tstg
-55 ... +125
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMOS power MOSFET
- High blocking capability
TL
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting torque
300
°C
VISOL
Md
2500
V~
0.9 / 6 Nm/lb-in
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
Weight
8
g
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<40pF)
Applications
Symbol
RDS(on)
Test Conditions
Characteristic Values
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, I = ID90, Note 1
126
297
150 mΩ
mΩ
VGS = 10 V, IDD = ID90, Note 1 TJ = 125°C
z Inductive Heating
VGS(th)
IDSS
VDS = VGS, ID = 2 mA
2
4
V
Advantages
VDS = V
T = 25°C
50 µA
µA
VGS = 0DVSS
TJJ = 125°C
10
z Easy assembly
z Space savings
z High power density
IGSS
VGS = 20 VDC, VDS = 0
200
nA
CoolMOS is a trademark of Infineon
Technology.
DS99099(10/03)
© 2003 IXYS All rights reserved
