CoolMOSTM Power MOSFET
in ISOPLUS220TM Package
Electrically Isolated Back Surface
IXKC 20N60C
VDSS
ID25
= 600 V
= 14 A
RDS(on) =190 mΩ
N-Channel Enhancement Mode
Low RDS(on), Superjunction MOSFET
Preliminary Data Sheet
ISOPLUS 220LVTM
Symbol
Test Conditions
Maximum Ratings
E153432
VDSS
VGS
TJ = 25°C to 150°C
600
20
V
V
Continuous
ID25
ID90
TC = 25°C; Note 1
TC = 90°C, Note 1
14
10
A
A
G
D
S
Isolated back surface*
ID(RMS)
Package lead current limit
45
A
G = Gate,
D = Drain,
EAS
EAR
Io = 10A, TC = 25°C
Io = 20A
690
1
mJ
mJ
S = Source
* Patent pending
PD
TC = 25°C
125
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +125
z Silicon chip on Direct-Copper-Bond
substrate
TL
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
°C
- High power dissipation
VISOL
FC
2500
V~
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMOS power MOSFET
- High blocking capability
11 ... 65 / 2.4 ...11 N/lb
Weight
3
g
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<30pF)
Applications
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
Symbol
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, I = ID90, Note 3
160
463
190 mΩ
mΩ
z Inductive Heating
VGS = 10 V, IDD = ID90, Note 3 TJ = 125°C
Advantages
VGS(th)
IDSS
VDS = VGS, ID = 1 mA
3.5
5.5
1
V
z Easy assembly: no screws or isolation
foils required
VDS = V
T = 25°C
µA
µA
VGS = 0DVSS
TJJ = 125°C
10
z Space savings
z High power density
IGSS
VGS = 20 VDC, VDS = 0
100
nA
CooLMOS is a trademark of Infineon
Technologies, AG
DS98848C(1/04)
© 2004 IXYS All rights reserved
