Advanced Technical Information
VDSS
ID25
RDS(on)
CoolMOS Power MOSFET
800 V 44 A 74 mΩ
IXKN 45N80C
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
miniBLOC, SOT-227 B
E72873
MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
S
TVJ = 25°C to 150°C
800
±20
V
V
G
VGS
ID25
ID90
TC = 25°C
TC = 90°C
44
30
A
A
S
D
D = Drain
dv/dt
VDS < VDSS; IF ≤ 17 A; diF/dt ≤ 100 A/µs
TVJ = 150°C
6
V/ns
G = Gate
S = Source
EAS
EAR
ID = 4 A; L = 80 mH; TC = 25°C
ID = 17 A; L = 3 µH; TC = 25°C
670
0.5
mJ
mJ
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- International standard package SOT-227
- Easy screw assembly
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
63
74 mΩ
VDS = 20 V;ID = 4 mA;
2
4
V
rd
●
fast CoolMOS power MOSFET - 3 generation
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
50 µA
µA
- High blocking capability
- Low on resistance
20
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
IGSS
VGS = ±20 V; VDS = 0 V
400 nA
Qg
Qgs
Qgd
332
36
168
nC
nC
nC
VGS= 10 V; VDS = 640 V; ID = 70 A
●
Enhanced total power density
td(on)
tr
td(off)
tf
25
15
75
10
ns
ns
ns
ns
Applications
VGS= 10 V; VDS = 640 V;
ID = 70 A; RG = 1.8 Ω
●
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
●
●
●
VF
(reverse conduction) IF = 37.5 A;VGS = 0 V
1.0
1.2
V
●
Inductive heating
RthJC
0.33 K/W
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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