VDSS
ID25
RDS(on)
CoolMOS Power MOSFET
600 V 75 A 35 mΩ
IXKN 75N60C
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Preliminary
miniBLOC, SOT-227 B
E72873
MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
S
TVJ = 25°C to 150°C
600
±20
V
V
G
VGS
ID25
ID90
TC = 25°C
TC = 90°C
75
50
A
A
S
D
D = Drain
dv/dt
VDS < VDSS; IF ≤ 100A; diF/dt ≤ 200A/µs
TVJ = 150°C
6
V/ns
G = Gate
S = Source
EAS
EAR
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
1.8
1
J
mJ
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
●
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
min.
typ. max.
RDSon
VGSth
IDSS
VGS = 10 V;ID = ID90
30
35 mΩ
5.5 V
VDS = 20 V;ID = 5 mA;
3.5
- International standard package SOT-227
- Easy screw assembly
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
0.05 mA
mA
0.1
fast CoolMOS power MOSFET - 2nd generation
●
- High blocking capability
- Low on resistance
IGSS
VGS = ±20 V; VDS = 0 V
200 nA
Qg
Qgs
Qgd
440
112
246
nC
nC
nC
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
VGS= 10 V; VDS = 350 V; ID = 100 A
td(on)
tr
td(off)
tf
30
95
100
10
ns
ns
ns
ns
●
Enhanced total power density
VGS= 10 V; VDS = 380 V;
ID = 50 A; RG = 1 Ω
Applications
●
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
●
VF
(reverse conduction) IF = 37.5 A;VGS = 0 V
0.9
1.1
V
●
●
RthJC
0.22 K/W
●
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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