AdvancedTechnicalInformation
VDSS
ID25
RDS(on)
CoolMOSPower MOSFET
600V 40 A 70 mW
IXKN 40N60C
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Symbol
VDSS
Conditions
MaximumRatings
miniBLOC, SOT-227 B
E72873
TJ = 25°C to 150°C
600
V
V
S
VGS
±20
G
ID25
ID90
TC = 25°C
TC = 90°C
40
27
A
A
EAR
EAS
ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive
ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive
1
1.8
mJ
J
S
D
D = Drain
dv/dt
PD
VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM
TC = 25°C
6
V/ns
W
G = Gate
S = Source
290
Either source terminal at miniBLOC can be used
as main or kelvin source
TJ
TJM
Tstg
-40 ... +150
150
-40 ... +150
°C
°C
°C
Features
VISOL
Md
50/60 Hz, RMS IISOL £ 1 mA
2500
V~
●
miniBLOCpackage
Mountingtorque
Terminalconnetiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
- Electrically isolated copper base
- Lowcouplingcapacitancetotheheatsinkfor
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- InternationalstandardpackageSOT-227
- Easy screw assembly
●
Fast CoolMOS power MOSFET
MOSFET
Symbol
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Lowthermalresistance
due to reduced chip thickness
Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
IDSS
VGS = 0 V, ID = 1 mA
600
V
●
Enhanced total power density
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
0.5
50
25
µA
µA
Applications
●
Switched mode power supplies (SMPS)
Uninterruptiblepowersupplies(UPS)
Power factor correction (PFC)
Welding
RDS(on)
VGS(th)
IGSS
VGS = 10 V, ID = 0.5 • ID25
VDS = VGS, ID = 2.5 mA
VGS = ±20 VDC, VDS = 0
70 mW
●
●
3.5
5.5
V
●
±100
nA
●
Inductiveheating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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