Advanced Technical Information
VDSS
ID25
RDS(on)
CoolMOS Power MOSFET
in ISOPLUS247TM Package
600 V 38 A 70 mΩ
IXKR 40N60C
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
ISOPLUS 247TM
E153432
MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
±20
V
V
G
Isolated base*
D
VGS
ID25
ID90
TC = 25°C
TC = 90°C
38
25
A
A
G = Gate
D = Drain
S = Source
* Patent pending
dv/dt
VDS < VDSS; IF ≤ 50A; diF/dt ≤ 200A/µs
6
V/ns
TVJ = 150°C
Features
EAS
EAR
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
1.8
1
J
mJ
●
ISOPLUS247 package with DCB Base
- Electrical isolation towards the heatsink
- Lowcouplingcapacitancetotheheatsinkfor
reduced EMI
- High power dissipation
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
- High temperature cycling capability
of chip on DCB
- JEDEC TO247AD compatible
- Easy clip assembly
min.
typ. max.
70 mΩ
5.5 V
RDSon
VGSth
IDSS
VGS = 10 V; ID = ID90
● fast CoolMOS power MOSFET - 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
VDS = 20 V;ID = 3 mA;
3.5
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
25 µA
µA
60
due to reduced chip thickness
IGSS
VGS = ±20 V; VDS = 0 V
100 nA
●
Enhanced total power density
Qg
Qgs
Qgd
220
55
125
nC
nC
nC
VGS= 10 V; VDS = 350 V; ID = 50 A
Applications
●
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
td(on)
tr
td(off)
tf
30
95
100
10
ns
ns
ns
ns
●
VGS= 10 V; VDS = 380 V;
ID = 25 A; RG = 1.8 Ω
●
●
●
Inductive heating
VF
(reverse conduction) IF = 20 A; VGS = 0 V
0.9
1.1
V
CoolMOS is a trademark of
Infineon Technologies AG.
RthJC
0.45 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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