Advanced Technical Information
IXKT 70N60C5
CoolMOS™1) Power MOSFET
ID25
VDSS
=
66A
= 600V
RDS(on) max = 0.045Ω
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-268 AA
G
G
q
D(TAB)
S
S
Features
MOSFET
• fast CoolMOS™ 1) power MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
4th generation
TVJ = 25°C
600
20
V
- High blocking capability
- Lowest resistance
VGS
V
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
ID25
ID90
TC = 25°C
TC = 90°C
66
46
A
A
EAS
EAR
single pulse
repetitive
1950
3
mJ
mJ
ID = 11 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Applications
• Switched mode power supplies
(SMPS)
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
min. typ. max.
RDSon
VGS = 10 V; ID = 44 A
40
3
45
mΩ
• Inductive heating
• PDP and LCD adapter
VGS(th)
IDSS
VDS = VGS; ID = 3 mA
2.5
3.5
10
V
VDS = 600 V; VGS = 0 V
TVJ = 25°C
TVJ = 125°C
µA
µA
50
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
IGSS
VGS
=
20 V; VDS = 0 V
100
190
nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
6800
320
pF
pF
Qg
Qgs
Qgd
150
35
50
nC
nC
nC
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A
td(on)
tr
td(off)
tf
30
20
100
10
ns
ns
ns
ns
VGS = 10 V; VDS = 400 V
ID = 44 A; RG = 3.3 Ω
RthJC
0.23 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
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