IXKH 13N60C5
IXKP 13N60C5
COOLMOS® * Power MOSFET
ID25
VDSS
= 13 A
= 600 V
RDS(on) max = 0.3 W
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-247 AD (IXKH)
G
G
D
S
D(TAB)
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
• fast COOLMOS® * power MOSFET
Symbol
VDSS
Conditions
Maximum Ratings
600
4th generation
TVJ = 25°C
V
- High blocking capability
- Lowest resistance
±
VGS
20
V
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
ID25
ID90
TC = 25°C
TC = 90°C
ꢀ3
9
A
A
EAS
EAR
single pulse
repetitive
290
0.44
mJ
mJ
ID = 4.4 A; TC = 25°C
dV/dt
MOSFET dV/dt ruggedness VDS = 0...480 V
50 V/ns
Applications
• Switched mode power supplies
(SMPS)
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
min. typ. max.
RDSon
VGS = ꢀ0 V; ID = 6.6 A
270
3
300
mW
• Inductive heating
• PDP and LCD adapter
VGS(th)
IDSS
VDS = VGS; ID = 0.44 mA
VDS = 600 V; VGS = 0 V
2.5
3.5
ꢀ
V
TVJ = 25°C
TVJ = ꢀ25°C
µA
µA
tbd
*COOLMOS® is a trademark of
Infineon Technologies AG.
±
IGSS
VGS
=
20 V; VDS = 0 V
ꢀ00
30
nA
Ciss
Coss
VGS = 0 V; VDS = ꢀ00 V
f = ꢀ MHz
ꢀꢀ00
60
pF
pF
Qg
Qgs
Qgd
20
5
7.6
nC
nC
nC
VGS = 0 to ꢀ0 V; VDS = 400 V; ID = 6.6 A
td(on)
tr
td(off)
tf
tbd
tbd
tbd
tbd
ns
ns
ns
ns
VGS = ꢀ0 V; VDS = 400 V
ID = 6.6 A; RG = 4.3 Ω
RthJC
0.95 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
200803ꢀ0a
ꢀ - 4
