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IXKH20N60C5

型号：

IXKH20N60C5

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

153 K

下载PDF手册
IXKH 20N60C5  
IXKP 20N60C5  
CoolMOS™ 1) Power MOSFET  
N-Channel Enhancement Mode  
Low RDSon, High VDSS MOSFET  
Ultra low gate charge  
ID25  
VDSS  
= 20 A  
= 600 V  
RDS(on) max = 0.2 Ω  
D
TO-247 AD (IXKH)  
G
G
D
S
q D(TAB)  
S
TO-220 AB (IXKP)  
G
D
S
Features  
MOSFET  
• fast CoolMOS™ 1) power MOSFET  
- 4th generation  
- High blocking capability  
- Lowest resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
- Avalanche rated for unclamped  
inductive switching (UIS)  
- Low thermal resistance  
due to reduced chip thickness  
• Enhanced total power density  
ID25  
ID90  
TC = 25°C  
TC = 90°C  
20  
13  
A
A
EAS  
EAR  
single pulse  
repetitive  
435  
0.66  
mJ  
mJ  
ID = 6.6 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Applications  
• Switched mode power supplies  
(SMPS)  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
min. typ. max.  
RDSon  
VGS = 10 V; ID = 10 A  
180  
3
200  
mΩ  
• Inductive heating  
• PDP and LCD adapter  
VGS(th)  
IDSS  
VDS = VGS; ID = 1.1 mA  
VDS = 600 V; VGS = 0 V  
2.5  
3.5  
1
V
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
10  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
45  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
1520  
72  
pF  
pF  
Qg  
Qgs  
Qgd  
32  
8
11  
nC  
nC  
nC  
VGS = 0 to 10 V; VDS = 400 V; ID = 10 A  
td(on)  
tr  
td(off)  
tf  
10  
5
50  
5
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 10 A; RG = 3.3 Ω  
RthJC  
0.60 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523d  
1 - 4  
IXKH 20N60C5  
IXKP 20N60C5  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
10  
A
VSD  
IF = 10 A; VGS = 0 V  
0.9  
1.2  
V
trr  
QRM  
IRM  
340  
5.5  
33  
ns  
µC  
A
IF = 10 A; -diF/dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
-55...+150  
-55...+150  
°C  
°C  
Md  
mounting torque  
TO-247  
TO-220  
0.8 ... 1.2  
0.4 ... 0.6  
Nm  
Nm  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
RthCH  
with heatsink compound TO-247  
TO-220  
0.25  
0.50  
K/W  
K/W  
Weight  
TO-247  
TO-220  
6
2
g
g
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523d  
2 - 4  
IXKH 20N60C5  
IXKP 20N60C5  
TO-247 AD Outline  
Symbol  
Inches  
min  
Millimeters  
max  
0.209  
0.102  
0.098  
0.845  
0.640  
0.216  
min  
max  
A
0.185  
0.087  
0.059  
0.819  
0.610  
0.170  
4.70  
2.21  
5.30  
2.59  
A1  
A2  
D
E
E2  
e
1.50  
2.49  
20.79  
15.48  
4.31  
21.45  
16.24  
5.48  
0.215 BSC  
5.46 BSC  
L
0.780  
-
0.140  
0.212  
0.800  
0.177  
0.144  
0.244  
19.80  
-
3.55  
5.38  
20.30  
4.49  
3.65  
6.19  
L1  
ØP  
Q
S
0.242 BSC  
6.14 BSC  
b
0.039  
0.065  
0.102  
0.015  
0.515  
0.020  
0.530  
-
0.055  
0.094  
0.135  
0.035  
-
0.053  
-
0.291  
0.99  
1.65  
2.59  
0.38  
13.07  
0.51  
13.45  
-
1.40  
2.39  
3.43  
0.89  
-
1.35  
-
7.39  
b2  
b4  
c
D1  
D2  
E1  
ØP1  
TO-220 AB Outline  
Dim. Millimeter  
Min. Max.  
Inches  
Min. Max.  
M
A
B
12.70 13.97  
14.73 16.00  
0.500 0.550  
0.580 0.630  
C
N
C
D
9.91 10.66  
3.54 4.08  
0.390 0.420  
0.139 0.161  
E
F
5.85 6.85  
2.54 3.18  
0.230 0.270  
0.100 0.125  
G
H
1.15 1.65  
2.79 5.84  
0.045 0.065  
0.110 0.230  
G
J
K
0.64 1.01  
2.54 BSC  
0.025 0.040  
0.100 BSC  
Q
R
J
M
N
4.32 4.82  
1.14 1.39  
0.170 0.190  
0.045 0.055  
K
L
Q
R
0.35 0.56  
2.29 2.79  
0.014 0.022  
0.090 0.110  
250  
200  
150  
100  
50  
75  
60  
45  
30  
15  
0
35  
30  
25  
20  
15  
10  
5
TJ = 125°C  
TJ = 25°C  
20 V  
20 V  
=
VGS  
10 V  
10 V  
7 V  
6 V  
8 V  
=
VGS  
8 V  
5.5 V  
7 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
0
0
0
5
10  
[V]  
15  
20  
5
10  
15  
20  
0
40  
80  
120  
160  
V
V DS [V]  
TC [°C]  
DS  
Fig. 1 Power dissipation  
Fig. 2 Typ. output characteristics  
Fig. 3 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523d  
3 - 4  
IXKH 20N60C5  
IXKP 20N60C5  
1.2  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
80  
60  
40  
20  
0
6.5 V  
TJV = 150°C  
VDS  
ID = 10 A  
VGS = 10 V  
VDS > 2·RDS(on) max · ID  
6 V  
5.5 V  
5 V  
=
1
25 °C  
10 V  
0.8  
0.6  
0.4  
0.2  
7 V  
98 %  
TJ = 150 °C  
typ  
0
0
0
2
4
6
8
10  
-60  
-20  
20  
60  
j [°C]  
100  
140  
180  
0
10  
20  
30  
40  
V
[V]  
T
GS  
I D [A]  
Fig. 4 Typ. drain-source on-state  
Fig. 5 Drain-source on-state resistance  
Fig. 6 Typ. transfer characteristics  
resistance characteristics of IGBT  
10 2  
10 1  
10 0  
10 -1  
10 5  
10 4  
10 3  
10 2  
10 1  
10 0  
10  
9
8
7
6
5
4
3
2
1
0
ID = 10 A pulsed  
VGS = 0 V  
f = 1 MHz  
25 °C, 98%  
VDS = 120 V  
150 °C, 98%  
25 °C  
40 0V  
Ciss  
50 °C  
TJ =  
Coss  
Crss  
0
0.5  
1
1.5  
2
0
100  
200  
300  
[V]  
400  
500  
0
10  
20  
30  
40  
V
[V]  
Q
gate [nC]  
V
SD  
DS  
Fig. 7 Forward characteristic  
of reverse diode  
Fig. 8 Typ. gate charge  
Fig. 9 Typ. capacitances  
10 0  
10 -1  
10 -2  
500  
700  
ID = 6.6 A  
ID = 0.25 mA  
0.5  
0.2  
400  
300  
200  
100  
660  
620  
580  
540  
D = tp/T  
0.1  
0.05  
0.02  
0.01  
single pulse  
0
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 0  
T
j [°C]  
T
j [°C]  
t p [s]  
Fig. 10 Avalanche energy  
Fig. 11 Drain-source breakdown voltage  
Fig. 12 Max. transient thermal  
impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523d  
4 - 4  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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