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IXKR47N60C5

型号：

IXKR47N60C5

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

5 页

PDF大小：

171 K

下载PDF手册
Advanced Technical Information  
IXKR 47N60C5  
CoolMOS™ 1) Power MOSFET  
VDSS  
ID25  
= 600V  
= 47A  
RDS(on) max = 45mΩ  
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
ISOPLUS247TM  
D
G
G
D
q
isolated back  
surface  
S
S
E72873  
Features  
MOSFET  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 30 pF)  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- high blocking capability  
- lowest resistance  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
47  
32  
A
A
EAS  
EAR  
single pulse  
repetitive  
1950  
3
mJ  
mJ  
ID = 11 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
wiConditions  
Characteristic Values  
due to reduced chip thickness  
• Enhanced total power density  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
RDSon  
VGS = 10 V; ID = 44 A  
40  
3
45  
mΩ  
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
VGS(th)  
IDSS  
VDS = VGS; ID = 3 mA  
VDS = VDSS; VGS = 0 V  
2.5  
3.5  
10  
V
TVJ = 25°C  
TVJ = 150°C  
µA  
µA  
50  
• Inductive heating  
• PDP and LCD adapter  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
6800  
320  
pF  
pF  
Advantages  
Qg  
Qgs  
Qgd  
150  
35  
50  
190  
nC  
nC  
nC  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A  
• High power density  
• High reliability  
td(on)  
tr  
td(off)  
tf  
30  
20  
100  
10  
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 44 A; RG = 3.3 Ω  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
RthJC  
RthCH  
0.45 K/W  
K/W  
with heatsink compound  
0.25  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
1 - 4  
Advanced Technical Information  
IXKR 47N60C5  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
44  
A
VSD  
IF = 44 A; VGS = 0 V  
0.9  
1.2  
V
trr  
QRM  
IRM  
600  
17  
60  
ns  
µC  
A
IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
storage  
-55...+150  
-55...+150  
°C  
°C  
V~  
N
VISOL  
FC  
IISOL = 1 mA, 50/60 Hz, t = 1 min  
2500  
mounting force with clip  
20-120  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
coupling capacity between shorted  
pins and mounting tab in the case  
CP  
pF  
30  
dS, dA  
dS, dA  
pin - pin  
pin - backside metal  
tbd  
tbd  
mm  
mm  
Weight  
g
6
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
2 - 4  
Advanced Technical Information  
IXKR 47N60C5  
ISOPLUS247TM Outline  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststofff--  
oberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of  
device bottom side  
Die Gehäuseabmessungen entsprechen demTyp TO-247 AD gemäß JEDEC  
außer Schraubloch und Lmax  
.
This drawing will meet all dimensions requiarement of JEDEC outlineTO-247 AD  
except screw hole and except Lmax  
.
350  
300  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
140  
10 V  
8 V  
8 V  
7 V  
TJ = 25°C  
20 V  
=
VGS  
TJ = 150°C  
10 V  
120  
100  
80  
60  
40  
20  
0
7 V  
6 V  
VGS  
=
20 V  
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
0
0
40  
80  
TC [°C]  
120  
160  
0
5
10  
15  
20  
0
5
10  
15  
20  
V
[V]  
V
[V]  
DS  
DS  
Fig. 1 Typ. power dissipation  
Fig. 3 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
3 - 4  
Advanced Technical Information  
IXKR 47N60C5  
0.16  
0.12  
0.08  
0.04  
0.12  
320  
280  
240  
200  
160  
120  
80  
ID = 44 A  
VGS = 10 V  
TJV = 150°C  
VDS > 2·RDS(on) max · ID  
25 °C  
5.5 V  
5 V  
=
VDS  
6 V  
6.5 V  
7 V  
0.1  
0.08  
20 V  
0.06  
98 %  
150 °C  
typ  
TJ =  
0.04  
0.02  
0
40  
0
0
0
20  
40  
60  
80  
100  
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
I D [A]  
T
j [°C]  
V
[V]  
GS  
Fig. 4 Typ. drain-source on-state  
resistance  
Fig. 5 Drain-source on-state resistance  
Fig. 6 Typ. transfer characteristics  
10 3  
10 2  
10 1  
10 0  
10 5  
10 4  
10 3  
10 2  
10 1  
10 0  
12  
10  
8
ID = 11 A pulsed  
VGS = 0 V  
f = 1 MHz  
Ciss  
VDS = 50 V  
1 20 V  
40 0V  
150 °C, 98%  
25 °C  
TJ =150 °C  
Coss  
6
25 °C, 98%  
4
Crss  
2
0
0
0.5  
1
1.5  
2
0
50  
100  
[V]  
150  
200  
0
50  
100  
150  
V
[V]  
Q gate [nC]  
V
SD  
DS  
Fig. 7 Forward characteristic  
of reverse diode  
Fig. 8 Typ. gate charge  
Fig. 9 Typ. capacitances  
10 0  
10 -1  
10 -2  
10 -3  
2000  
700  
660  
620  
580  
540  
ID = 11 A  
ID = 0.25 mA  
1500  
1000  
500  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 0  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T
j [°C]  
T
j [°C]  
t p [s]  
Fig. 9 Avalanche energy  
Fig. 10 Drain-source breakdown voltage  
Fig. 12 Max. transient thermal  
impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
4 - 4  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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