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IXKR47N60C5

型号：

IXKR47N60C5

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

132 K

下载PDF手册
Advanced Technical Information  
IXKR 47N60C5  
CoolMOS™ 1) Power MOSFET  
VDSS  
ID25  
= 600V  
= 47A  
RDS(on) max = 45mΩ  
Electrically isolated back surface  
2500 V electrical isolation  
N-Channel Enhancement Mode  
Low RDSon, high VDSS MOSFET  
Ultra low gate charge  
ISOPLUS247TM  
D
G
G
D
q
isolated back  
surface  
S
S
E72873  
Features  
MOSFET  
• Silicon chip on Direct-Copper-Bond  
substrate  
- high power dissipation  
- isolated mounting surface  
- 2500 V electrical isolation  
- low drain to tab capacitance (< 30 pF)  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- high blocking capability  
- lowest resistance  
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
47  
32  
A
A
EAS  
EAR  
single pulse  
repetitive  
1950  
3
mJ  
mJ  
ID = 11 A; TC = 25°C  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
wiConditions  
Characteristic Values  
due to reduced chip thickness  
• Enhanced total power density  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
RDSon  
VGS = 10 V; ID = 44 A  
40  
3
45  
mΩ  
• Switched mode power supplies  
(SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
VGS(th)  
IDSS  
VDS = VGS; ID = 3 mA  
VDS = VDSS; VGS = 0 V  
2.5  
3.5  
10  
V
TVJ = 25°C  
TVJ = 150°C  
µA  
µA  
50  
• Inductive heating  
• PDP and LCD adapter  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
6800  
320  
pF  
pF  
Advantages  
Qg  
Qgs  
Qgd  
150  
35  
50  
190  
nC  
nC  
nC  
• Easy assembly:  
no screws or isolation foils required  
• Space savings  
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A  
• High power density  
• High reliability  
td(on)  
tr  
td(off)  
tf  
30  
20  
100  
10  
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 44 A; RG = 3.3 Ω  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
RthJC  
RthCH  
0.45 K/W  
K/W  
with heatsink compound  
0.25  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
1 - 4  
Advanced Technical Information  
IXKR 47N60C5  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
44  
A
VSD  
IF = 44 A; VGS = 0 V  
0.9  
1.2  
V
trr  
QRM  
IRM  
600  
17  
60  
ns  
µC  
A
IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
storage  
-55...+150  
-55...+150  
°C  
°C  
V~  
N
VISOL  
FC  
IISOL = 1 mA, 50/60 Hz, t = 1 min  
2500  
mounting force with clip  
20-120  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
coupling capacity between shorted  
pins and mounting tab in the case  
CP  
pF  
30  
dS, dA  
dS, dA  
pin - pin  
pin - backside metal  
tbd  
tbd  
mm  
mm  
Weight  
g
6
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
2 - 4  
Advanced Technical Information  
IXKR 47N60C5  
ISOPLUS247TM Outline  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststofff--  
oberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of  
device bottom side  
Die Gehäuseabmessungen entsprechen demTyp TO-247 AD gemäß JEDEC  
außer Schraubloch und Lmax  
.
This drawing will meet all dimensions requiarement of JEDEC outlineTO-247 AD  
except screw hole and except Lmax  
.
350  
300  
250  
200  
150  
100  
50  
250  
200  
150  
100  
50  
140  
10 V  
8 V  
8 V  
7 V  
TJ = 25°C  
20 V  
=
VGS  
TJ = 150°C  
10 V  
120  
100  
80  
60  
40  
20  
0
7 V  
6 V  
VGS  
=
20 V  
5.5 V  
6 V  
5 V  
5.5 V  
4.5 V  
5 V  
4.5 V  
0
0
0
40  
80  
TC [°C]  
120  
160  
0
5
10  
15  
20  
0
5
10  
15  
20  
V
[V]  
V
[V]  
DS  
DS  
Fig. 1 Typ. power dissipation  
Fig. 3 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
3 - 4  
Advanced Technical Information  
IXKR 47N60C5  
0.16  
0.12  
0.08  
0.04  
0.12  
320  
280  
240  
200  
160  
120  
80  
ID = 44 A  
VGS = 10 V  
TJV = 150°C  
VDS > 2·RDS(on) max · ID  
25 °C  
5.5 V  
5 V  
=
VDS  
6 V  
6.5 V  
7 V  
0.1  
0.08  
20 V  
0.06  
98 %  
150 °C  
typ  
TJ =  
0.04  
0.02  
0
40  
0
0
0
20  
40  
60  
80  
100  
-60  
-20  
20  
60  
100  
140  
180  
0
2
4
6
8
10  
I D [A]  
T
j [°C]  
V
[V]  
GS  
Fig. 4 Typ. drain-source on-state  
resistance  
Fig. 5 Drain-source on-state resistance  
Fig. 6 Typ. transfer characteristics  
10 3  
10 2  
10 1  
10 0  
10 5  
10 4  
10 3  
10 2  
10 1  
10 0  
12  
10  
8
ID = 11 A pulsed  
VGS = 0 V  
f = 1 MHz  
Ciss  
VDS = 50 V  
1 20 V  
40 0V  
150 °C, 98%  
25 °C  
TJ =150 °C  
Coss  
6
25 °C, 98%  
4
Crss  
2
0
0
0.5  
1
1.5  
2
0
50  
100  
[V]  
150  
200  
0
50  
100  
150  
V
[V]  
Q gate [nC]  
V
SD  
DS  
Fig. 7 Forward characteristic  
of reverse diode  
Fig. 8 Typ. gate charge  
Fig. 9 Typ. capacitances  
10 0  
10 -1  
10 -2  
10 -3  
2000  
700  
660  
620  
580  
540  
ID = 11 A  
ID = 0.25 mA  
1500  
1000  
500  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 0  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T
j [°C]  
T
j [°C]  
t p [s]  
Fig. 9 Avalanche energy  
Fig. 10 Drain-source breakdown voltage  
Fig. 12 Max. transient thermal  
impedance  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523b  
4 - 4  
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