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IXKP10N60C5M

型号：

IXKP10N60C5M

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

4 页

PDF大小：

97 K

下载PDF手册
IXKP 10N60C5M  
CoolMOS™ 1) Power MOSFET  
ID25  
VDSS  
=
5.4 A  
= 600 V  
RDS(on) max = 0.385 Ω  
Fully isolated package  
N-Channel Enhancement Mode  
Low RDSon, High VDSS MOSFET  
Ultra low gate charge  
D
TO-220 ABFP  
G
D
S
G
Preliminary data  
S
Features  
MOSFET  
• Fast CoolMOS™ 1) power MOSFET 4th  
generation  
- High blocking capability  
- Lowest resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
- Avalanche rated for unclamped  
inductive switching (UIS)  
• Fully isolated package  
ID25  
ID90  
TC = 25°C  
TC = 90°C  
5.4  
3.7  
A
A
EAS  
EAR  
single pulse  
repetitive  
225  
0.3  
mJ  
mJ  
ID = 3.4 A; TC = 25°C  
Applications  
• Switched mode power supplies (SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
50 V/ns  
Symbol  
Conditions  
Characteristic Values  
• Inductive heating  
• PDP and LCD adapter  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
RDSon  
VGS = 10 V; ID = 5.2 A  
350  
3
385  
mΩ  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
VGS(th)  
IDSS  
VDS = VGS; ID = 0.34 mA  
VDS = 600 V; VGS = 0 V  
2.5  
3.5  
1
V
TVJ = 25°C  
TVJ = 125°C  
µA  
µA  
10  
IGSS  
VGS  
=
20 V; VDS = 0 V  
100  
22  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
790  
38  
pF  
pF  
Qg  
Qgs  
Qgd  
17  
4
6
nC  
nC  
nC  
VGS = 0 to 10 V; VDS = 400 V; ID = 5.2 A  
td(on)  
tr  
td(off)  
tf  
10  
5
40  
5
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 400 V  
ID = 5.2 A; RG = 3.3 Ω  
RthJC  
3.95 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209d  
1 - 4  
IXKP 10N60C5M  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
5.2  
1.2  
A
VSD  
IF = 5.2 A; VGS = 0 V  
0.9  
V
trr  
QRM  
IRM  
260  
21  
24  
ns  
µC  
A
IF = 5.2 A; -diF/dt = 100 A/µs; VR = 400 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
-55...+150  
-55...+150  
°C  
°C  
Md  
mounting torque  
0.4 ... 0.6  
Nm  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
RthCH  
RthJA  
with heatsink compound  
thermal resistance junction - ambient  
0.50  
80  
K/W  
K/W  
Weight  
2
g
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209d  
2 - 4  
IXKP 10N60C5M  
TO-220 ABFP Outline  
Ø P  
A
E
A1  
H
Q
D
L1  
A2  
L
c
b1  
b
e
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
25  
20  
15  
10  
5
8 V  
20 V  
10 V  
8 V  
7 V  
TJ = 25°C  
TJ = 150°C  
7 V  
10 V  
6 V  
VGS  
=
20 V  
VGS  
=
5.5 V  
6 V  
5 V  
5.5 V  
6
4.5 V  
5 V  
4
2
4.5 V  
0
0
0
0
40  
80  
120  
160  
0
5
10  
[V]  
15  
20  
0
5
10  
15  
20  
TC [°C]  
V
DS  
V DS [V]  
Fig. 1 Power dissipation  
Fig. 2 Typ. output characteristics  
Fig. 3 Typ. output characteristics  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209d  
3 - 4  
IXKP 10N60C5M  
1.6  
1.2  
0.8  
0.4  
1.2  
40  
36  
32  
28  
24  
20  
16  
12  
8
6.5 V  
6 V  
ID = 5.2 A  
VDS > 2·RDS(on) max · ID  
VGS = 10 V  
25 °C  
7 V  
5 V  
5.5 V  
1
20 V  
0.8  
0.6  
0.4  
0.2  
150 °C  
98 %  
TJ  
=
typ  
4
0
0
0
-60  
-20  
20  
60  
j [°C]  
100  
140  
180  
0
5
10  
15  
20  
0
2
4
6
8
10  
T
I D [A]  
V
[V]  
GS  
Fig. 3 Typ. drain-source on-state  
Fig. 4 Drain-source on-state resistance  
Fig. 5 Typ. transfer characteristics  
resistance characteristics of IGBT  
10 2  
10 1  
10 0  
10 -1  
10 5  
10  
ID = 5.2 A pulsed  
VGS = 0 V  
f = 1 MHz  
9
8
7
6
5
4
3
2
1
0
10 4  
10 3  
10 2  
10 1  
10 0  
VDS  
=
120 V  
150 °C, 98%  
25 °C  
TJ  
=
150 °C  
400 V  
Ciss  
Coss  
25 °C, 98%  
Crss  
0
50  
100  
[V]  
150  
200  
0
0.5  
1
1.5  
2
0
5
10  
gate [nC]  
15  
20  
V
V
[V]  
Q
DS  
SD  
Fig. 6 Forward characteristic  
of reverse diode  
Fig. 7 Typ. gate charge  
Fig. 8 Typ. capacitances  
250  
200  
150  
100  
50  
700  
660  
620  
580  
540  
ID = 3.4 A  
ID = 0.25 mA  
0
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
T
j [°C]  
T
j [°C]  
Fig. 9 Avalanche energy  
Fig. 10 Drain-source breakdown voltage  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2009 IXYS All rights reserved  
20090209d  
4 - 4  
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