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IXKH47N60C

型号：

IXKH47N60C

描述：

CoolMOSâ ?? ¢ 1 ）功率MOSFET[ CoolMOS™ 1) Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

152 K

下载PDF手册
IXKH 47N60C  
CoolMOS™ 1) Power MOSFET  
VDSS  
ID25  
= 600V  
= 47A  
RDS(on) max = 70mΩ  
Low RDSon, high VDSS  
Superjunction MOSFET  
D
TO-247  
G
G
q
D
S
tab  
S
E72873  
Features  
MOSFET  
• 3rd generation Superjunction power  
MOSFET  
- high blocking capability  
- lowest resistance  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
TVJ = 25°C  
600  
20  
V
VGS  
V
- avalanche rated for unclamped  
inductive switching (UIS)  
- low thermal resistance  
due to reduced chip thickness  
ID25  
ID100  
TC = 25°C  
TC = 100°C  
47  
30  
A
A
EAS  
EAR  
single pulse ID = 10 A; TC = 25°C  
repetitive  
1800  
tbd  
mJ  
mJ  
ID = 20 A; TC = 25°C  
Applications  
dV/dt  
MOSFET dV/dt ruggedness VDS = 0...480 V  
tbd V/ns  
• Switched mode power supplies (SMPS)  
• Uninterruptible power supplies (UPS)  
• Power factor correction (PFC)  
• Welding  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
• Inductive heating  
min. typ. max.  
c
RDSon  
VGS = 10 V; ID = ID100  
VDS = VGS; ID = 2 mA  
60  
70  
4
mΩ  
1) CoolMOS™ is a trademark of  
Infineon Technologies AG.  
VGS(th)  
IDSS  
2
V
VDS = VDSS; VGS = 0 V  
TVJ = 25°C  
TVJ = 150°C  
25  
250  
µA  
µA  
IGSS  
VGS 20 V; VDS = 0 V  
=
100  
650  
nA  
Ciss  
Coss  
VGS = 0 V; VDS = 100 V  
f = 1 MHz  
tbd  
tbd  
pF  
pF  
Qg  
Qgs  
Qgd  
255  
30  
110  
nC  
nC  
nC  
VGS = 0 to 10 V; VDS = 350 V; ID = 40 A  
td(on)  
tr  
td(off)  
tf  
20  
27  
111  
10  
ns  
ns  
ns  
ns  
VGS = 10 V; VDS = 380 V  
ID = 47 A; RG = 4.7 Ω  
RthJC  
0.3 K/W  
c Pulse test, t < 300 µs, duty cycle d < 2%  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523a  
1 - 4  
IXKH 47N60C  
Source-Drain Diode  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
IS  
VGS = 0 V  
A
VSD  
IF = 40 A; VGS = 0 V  
V
trr  
QRM  
IRM  
ns  
µC  
A
IF = 40 A; -diF/dt = 100 A/µs; VR = 640 V  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
operating  
-55...+150  
-55...+150  
°C  
°C  
Md  
mounting torque  
1.13  
Nm  
Symbol  
Conditions  
Characteristic Values  
min. typ. max.  
RthCH  
with heatsink compound  
tbd  
2.7  
K/W  
g
Weight  
TO-247 Outline  
Symbol  
Inches  
min  
Millimeters  
max  
0.209  
0.102  
0.098  
0.845  
0.640  
0.216  
min  
max  
A
0.185  
0.087  
0.059  
0.819  
0.610  
0.170  
4.70  
2.21  
5.30  
2.59  
A1  
A2  
D
E
E2  
e
1.50  
2.49  
20.79  
15.48  
4.31  
21.45  
16.24  
5.48  
0.215 BSC  
5.46 BSC  
L
0.780  
-
0.140  
0.212  
0.800  
0.177  
0.144  
0.244  
19.80  
-
3.55  
5.38  
20.30  
4.49  
3.65  
6.19  
L1  
ØP  
Q
S
0.242 BSC  
6.14 BSC  
b
0.039  
0.065  
0.102  
0.015  
0.515  
0.020  
0.530  
-
0.055  
0.094  
0.135  
0.035  
-
0.053  
-
0.291  
0.99  
1.65  
2.59  
0.38  
13.07  
0.51  
13.45  
-
1.40  
2.39  
3.43  
0.89  
-
1.35  
-
7.39  
b2  
b4  
c
D1  
D2  
E1  
ØP1  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523a  
2 - 4  
IXKH 47N60C  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
180  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
VGS = 10V  
7V  
t
p = 300μs  
t
p = 300μs  
160  
140  
120  
100  
80  
6V  
5V  
6V  
5V  
4.5V  
4V  
60  
40  
20  
0
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12 14  
16  
18  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID100 Value  
vs. Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
VGS = 10V  
VGS = 10V  
p = 300μs  
t
p = 300μs  
5V  
t
4.5V  
4V  
ID = 30A  
ID = 15A  
0.7  
0.4  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
D100 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
I
4
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
t
p = 300μs  
TJ = 125ºC  
TJ = 25ºC  
0.7  
0
20  
40  
60  
80 100 120 140 160 180  
I D - Amperes  
-50  
-25  
0
25  
50  
75  
100 125 150  
TC - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523a  
3 - 4  
IXKH 47N60C  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
120  
100  
80  
60  
40  
20  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
0
20  
40  
60  
80  
100  
120  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 350V  
ID = 40A  
G = 10mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
30  
60  
90 120 150 180 210 240 270  
Q G - nanoCoulombs  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
VS D - Volts  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1
100000  
10000  
1000  
100  
f = 1MHz  
C
iss  
0.1  
C
oss  
C
rss  
0.01  
10  
1
10  
100  
1000  
0
10 20 30 40 50 60 70 80 90 100  
Pulse Width - milliseconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2008 IXYS All rights reserved  
20080523a  
4 - 4  
厂商 型号 描述 页数 下载

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IXYS

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 		IXKG25N80C 的CoolMOS功率MOSFET ISO264[ CoolMOS Power MOSFET ISO264 ] 2 页

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