IXKK85N60C
Symbol
Test Conditions
Characteristic Values
TO-264 (IXKK) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
Ciss
13.6
4400
290
nF
pF
pF
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
20
ns
Resistive Switching Times
VGS = 13V, VDS = 380V, ID = 85A
RG = 1Ω (External)
tr
27
ns
ns
td(off)
110
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
tf
10
ns
Dim.
Millimeter
Inches
Qg(on)
Qgs
500
50
640 nC
nC
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VGS = 10V, VDS = 350V, ID = 85A
Qgd
240
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
RthJC
RthCH
0.18 °C/W
°C/W
0.53
0.83
.021
1.020
.780
.033
1.030
.786
0.15
25.91 26.16
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
Source-Drain Diode
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
R
R1
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
.239
.330
.150
.070
.247
.342
.170
.090
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
85
A
A
V
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
250
1.2
trr
QRM
IRM
580
46
140
ns
μC
A
IF = 85A, -di/dt = 200A/μs
VR = 350V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
