Advanced Technical Information
IXKR 25N80C
CoolMOS™ 1) Power MOSFET
ID25 = 25A
VDSS = 800V
RDS(on) = 125mW
in ISOPLUS247™ Package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
ISOPLUS 247™
D
G
G
Eꢀ53432
D
S
S
G = Gate, D = Drain, S = Source
Features
MOSFET
• ISOPLUS247™ package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
Symbol
VDSS
Conditions
Maximum Ratings
800
TVJ = 25°C to ꢀ50°C
V
±
VGS
20
V
- High power dissipation
- High temperature cycling capability
of chip on DCB
ID25
ID90
TC = 25°C
TC = 90°C
25
ꢀ8
A
A
- JEDEC TO-247AD compatible
- Easy clip assembly
dv/dt
VDS < VDSS; IF < ꢀ7 A | diF /dt | < ꢀ00 A/µs
TVJ = ꢀ50°C
6
V/ns
• fast CoolMOS™ ꢀ) power MOSFET
3rd generation
EAS
EAR
ID = 4 A; L = 80 mH; TC = 25°C
ID = ꢀ7 A; L = 3.3 mH; TC = 25°C
0.67
0.5
mJ
mJ
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
due to reduced chip thickness
• Enhanced total power density
min. typ. max.
RDSon
VGS = ꢀ0 V; ID = ID90
ꢀ25
ꢀ50
mW
Applications
VGS(th)
IDSS
VDS = 20 V; ID = 2 mA
2
4
V
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = ꢀ25°C
50
µA
µA
ꢀ00
• Inductive heating
±
IGSS
VGS
=
20 V; VDS = 0 V
200
355
nA
Qg
Qgs
Qgd
ꢀ80
24
92
nC
nC
nC
VGS = ꢀ0 V; VDS = 640 V; ID = 34 A
td(on)
tr
td(off)
tf
25
ꢀ5
72
6
ns
ns
ns
ns
VGS = ꢀ0 V; VDS = 640 V
ID = 34 A; RG = 2.2 Ω
VF
(reverse conduction) IF = ꢀ2.5 A;VGS = 0 V
ꢀ
ꢀ.3
V
ꢀ) CoolMOS™ is a trademark of
Infineon Technologies AG.
RthJC
0.5 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080526a
ꢀ - 2
