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5SNS0300U1201

型号：

5SNS0300U1201

描述：

IGBT模块LoPak5 SPT[ IGBT Module LoPak5 SPT ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

531 K

下载PDF手册
VCE  
IC  
=
=
1200 V  
300 A  
IGBT Module LoPak5 SPT  
5SNS 0300U120100  
Doc. No. 5SYA1528-02 July 03  
S Low-loss, rugged SPT chip-set  
S Smooth switching SPT chip-set for  
good EMC  
S Low profile compact baseless  
package for high power cycling  
capability  
S Snap-on PCB assembly  
S Integrated PTC substrate  
temperature sensor  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
ICM  
VGES  
Ptot  
IF  
1200  
V
A
A
V
W
A
A
VGE = 0 V, Tvj O 25 °C  
Th = 60 °C  
tp = 1 ms, Th = 60 °C  
300  
600  
20  
960  
300  
600  
-20  
Th = 25 °C, per switch (IGBT)  
IFM  
VR = 0 V, Tvj = 125 °C,  
Surge current  
IFSM  
3600  
A
tp = 10 ms, half-sinewave  
VCC =900 V, VCEM CHIP ? 1200 V  
VGE ? 15 V, Tvj ? 125 °C  
IGBT short circuit SOA  
tpsc  
10  
µs  
Isolation voltage  
Visol  
Tvj  
Tc(op)  
Tstg  
M1  
1min, f =50Hz  
2500  
150  
125  
125  
3
V
Junction temperature  
Case operating temperature  
Storage temperature  
°C  
°C  
°C  
-40  
-40  
2
Base-heatsink, M5 screws  
Main terminals, M6 screws  
Mounting torques  
Nm  
M2  
4
5
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNS 0300U120100  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
1200  
V
breakdown voltage  
2)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1.9  
2.1  
2.3  
1
V
V
mA  
mA  
nA  
V
Collector-emitter  
saturation voltage  
VCE sat  
ICES  
IC = 300 A, VGE = 15 V  
VCE = 1200 V, VGE = 0 V  
Collector cut-off current  
15  
Gate leakage current  
Gate-emitter threshold voltage  
IGES  
-500  
4.5  
500  
6.5  
VCE = 0 V, VGE = M20 V, Tvj = 125 °C  
VGE(TO)  
IC = 12 mA, VCE = VGE, Tvj = 25 °C  
IC = 300 A, VCE = 600 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
4000  
nC  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Cies  
Coes  
Cres  
27  
3.0  
1.3  
150  
180  
80  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
VCC = 600 V,  
IC = 300 A,  
RG = 3.3 ꢀ,  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
ns  
ns  
ns  
ns  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
V
GE = M15 V,  
80  
L = 55 nH, inductive load  
ꢀ
VCC = 600 V,  
IC = 300 A,  
RG = 3.3 ꢀ,  
770  
750  
60  
Turn-off delay time  
Fall time  
V
GE = M15 V,  
70  
L = 55 nH, inductive load  
ꢀ
VCC = 600 V, IC = 300 A,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
19  
28  
24  
34  
Turn-on switching energy  
Eon  
V
GE = ±15, RG = 3.3 ꢀ,  
mJ  
mJ  
L = 55 nH, inductive load  
ꢀ
VCC = 600 V, IC = 300 A,  
Turn-off switching energy  
Short circuit current  
Eoff  
ISC  
VGE = ±15, RG = 3.3 ꢀ,  
ꢀ
L = 55 nH, inductive load  
t
psc ≤ 10 µs, VGE = 15 V, Tvj = 125 °C,  
1650  
20  
A
V
CC = 900 V, VCEM CHIP ≤ 1200 V  
Module stray inductance  
plus to minus  
L
ꢀ DC  
nH  
Th = 25 °C  
Th = 125 °C  
0.9  
1.0  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
2) Collector emitter saturation voltage is given at chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 2 of 9  
5SNS 0300U120100  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1.9  
1.9  
250  
340  
27  
2.1  
3)  
Continous forward voltage  
VF  
IRM  
QRR  
trr  
IF = 300 A  
V
A
Peak reverse recovery  
current  
VCC = 600 V,  
IF = 300 A,  
Recovered charge  
µC  
ns  
mJ  
58  
VGE = M15 V,  
RG = 3.3 ꢀ  
120  
180  
13  
Reverse recovery time  
Reverse recovery energy  
L = 55 nH  
ꢀ
inductive load  
Erec  
27  
3) Forward voltage is given at chip level  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
4)  
Heatsink: flatness < ±50 µm,  
IGBT thermal resistance  
Rth(j-h)IGBT  
Rth(j-h)DIODE  
PTC  
0.13 K/W  
junction to heatsink  
roughness < 6 µm without ridge  
4)  
Thermal grease: conductivity O 0.8 W/mK,  
thickness 30 µm < t < 50 µm  
Diode thermal resistance  
junction to heatsink  
0.19 K/W  
RT = RT0 exp [B (1/T - 1/T0)]  
Temperature sensor  
R
T0 = 1kꢀ (±3%), B = -760 K (±2%), T0 = 298 K  
Mechanical properties  
Parameter  
Dimensions  
Symbol Conditions  
min typ max Unit  
L x W x H  
184.5 x 106.5 x 34.5  
Typical , see outline drawing  
mm  
Term. to base: 9.5  
Term. to term: 11  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance  
DC  
mm  
Term. to base: 9.5  
Term. to term: 12.5  
460  
Hole for selftapping screw: 2.5 mm diameter, 6.0 mm deep  
Control terminal Spring pins, pitch of pins = 4 mm, PCB thickness = 1.6 mm  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Weight  
DSC  
mm  
gr  
PCB mounting  
4)  
Mounting  
4) For detailed mounting instructions refer to ABB Document No. 5SYA 2017  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 3 of 9  
5SNS 0300U120100  
Electrical configuration  
Outline drawing  
For mounting instructions refer to ABB document No. 5SYA 2017  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 4 of 9  
5SNS 0300U120100  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
17V  
15V  
17V  
15V  
13V  
11V  
9V  
13V  
11V  
9V  
Tvj = 25 °C  
4
Tvj = 125 °C  
0
1
2
3
5
0
1
2
3
4
5
VCE [V]  
VCE [V]  
Fig. 1  
Typical output characteristics, chip level  
Fig. 2  
Typical output characteristics, chip level  
600  
500  
400  
300  
200  
100  
0
2.5  
2
VCE = 20 V  
VGE = ±15 V, RG = 3.3 ohm  
Tvj = 150 °C  
1.5  
1
25 °C  
125 °C  
0.5  
0
Chip  
Power terminals  
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
200  
400  
600  
800  
1000 1200 1400  
VGE [V]  
VCE [V]  
Turn-off safe operating area (RBSOA)  
Fig. 3  
Typical transfer characteristics, chip level  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 5 of 9  
5SNS 0300U120100  
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
VCC = 600 V  
IC = 300 A  
VCC = 600 V  
RG = 3.3 ohm  
VGE = ±15 V  
Tvj = 125 °C  
VGE = ±15 V  
Tvj = 125 °C  
L = 55 nH  
ꢀ
L = 55 nH  
ꢀ
Eon  
Eoff  
Eoff  
Eon  
2
ꢂ
ꢁ
P
ꢀ
ꢁ P  
ꢀ
ESW [mJ] (1,74E 4 IC 1,25E 1 IC 9,38)  
0
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
IC [A]  
RG [ohm]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
1.00  
0.10  
0.01  
10.00  
1.00  
0.10  
0.01  
td(off)  
td(off)  
td(on)  
tr  
td(on)  
tr  
tf  
tf  
VCC = 600 V  
VCC = 600 V  
RG = 3.3 ohm  
VGE = ±15 V  
Tvj = 125 °C  
IC = 300 A  
VGE = ±15 V  
Tvj = 125 °C  
L = 55 nH  
ꢀ
L = 55 nH  
ꢀ
0
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
IC [ A ]  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 6 of 9  
5SNS 0300U120100  
100  
10  
1
20  
15  
10  
5
VGE = 0 V  
VCC = 600 V  
fOSC = 1 MHz  
VOSC = 50 mV  
Cies  
VCC = 800 V  
Coes  
Cres  
IC = 300 A  
Tvj = 25 °C  
0
0
5
10  
15  
20  
25  
30  
35  
0
1
2
3
Qg [µC]  
VCE [V]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
400  
300  
200  
100  
0
2000  
1800  
1600  
1400  
1200  
1000  
800  
VGE O 15 V  
Tvj = 150 °C  
600  
RT ꢀ RT 0eB(1 T ꢀ1 T )  
0
400  
RT0 1k ( 3%), B  
760 K ( 2%), T 298K  
0
ꢀ
ꢂ M  
ꢀ ꢁ  
M
ꢀ
200  
0
IGBT  
Diode  
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
Th [°C]  
100 120 140 160  
T [°C]  
Fig. 11 Rated current vs temperature  
Fig. 12 PTC temperature sensor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 7 of 9  
5SNS 0300U120100  
800  
700  
600  
500  
400  
300  
200  
100  
0
40  
35  
30  
25  
20  
15  
10  
5
400  
350  
300  
250  
200  
150  
100  
50  
Irr  
25 °C  
125 °C  
Erec  
VCC = 600 V  
RG = 3.3 ohm  
Tvj = 125 °C  
L = 55 nH  
ꢀ
Qrr  
2
ꢂ ꢁ  
Erec[mJ] ( 5,58E  
ꢁ P  
ꢀ
ꢁ P  
ꢀ
5 IF 8,41E 2 IF 6,75)  
0
0
0.0  
1.0  
2.0  
3.0  
0
100 200 300 400 500 600 700  
IF [A]  
VF [V]  
Fig. 13 Typical reverse recovery characteristics  
Fig. 14 Typical diode forward characteristics,  
vs forward current  
chip level  
40  
35  
30  
25  
20  
15  
10  
5
400  
350  
300  
250  
200  
150  
100  
50  
VCC = 600 V  
IF = 300 A  
Tvj = 125 °C  
L = 55 nH  
ꢀ
Irr  
Erec  
Qrr  
0
0
0
5
10  
15  
20  
25  
RG [ohm]  
Fig. 15 Typical reverse recovery characteristics  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1528-02 July 03  
page 8 of 9  
5SNS 0300U120100  
1
0.1  
Analytical function for transient thermal  
impedance:  
n
(t) = ꢀR  
Zth(j-h) Diode  
Zth JH  
i
(1-e-t/ꢀ i )  
iꢀ1  
Zth(j-h) IGBT  
i
1
2
3
4
5
Ri(K/kW) 117  
164  
Ri(K/kW) 167  
139  
9
2.4  
0.5  
1.6  
0.01  
0.001  
14  
0.2  
ꢀ (ms)  
i
17  
21  
10  
1.2  
ꢀ (ms)  
i
0.001  
0.01  
0.1  
1
t [s]  
Fig. 16 Typical thermal impedance vs time  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or  
guarantee expressed or implied is made regarding delivery, performance or suitability.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1528-02 July 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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