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5SNA0800N3301

型号：

5SNA0800N3301

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

320 K

下载PDF手册
VCE  
IC  
=
=
3300 V  
800 A  
ABB HiPakTM  
IGBT Module  
5SNA 0800N330100  
Doc. No. 5SYA 1591-00 Jan 07  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V, Tvj ≥ 25 °C  
Tc = 80 °C  
3300  
800  
V
A
A
V
W
A
A
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
1600  
20  
-20  
Tc = 25 °C, per switch (IGBT)  
7700  
800  
IFRM  
1600  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
8000  
10  
A
VCC = 2500 V, VCEM CHIP £ 3300 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
6000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 0800N330100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
3300  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.7  
3.5  
3.1  
3.8  
3.4  
4.3  
8
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 800 A, VGE = 15 V  
VCE = 3300 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
80  
Gate leakage current  
IGES  
-500  
5.5  
500  
7.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 160 mA, VCE = VGE, Tvj = 25 °C  
IC = 800 A, VCE = 1800 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
8.07  
µC  
Input capacitance  
Cies  
Coes  
Cres  
125  
7.71  
1.48  
525  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
525  
190  
tr  
Ls = 100 nH, inductive load Tvj = 125 °C  
200  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1060  
1210  
340  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 100 nH, inductive load Tvj = 125 °C  
460  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1000  
1380  
880  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
1250  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
3300  
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V  
Module stray inductance  
Ls CE  
15  
nH  
TC = 25 °C  
TC = 125 °C  
0.09  
0.13  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 2 of 9  
5SNA 0800N330100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.0  
2.3  
2.6  
6)  
Forward voltage  
VF  
Irr  
IF = 800 A  
V
A
2.0 2.35 2.6  
710  
950  
Reverse recovery current  
Recovered charge  
VCC = 1800 V,  
IF = 800 A,  
VGE = ±15 V,  
RG = 2.2 W  
Ls = 100 nH  
inductive load  
500  
Qrr  
trr  
µC  
ns  
mJ  
930  
850  
Reverse recovery time  
Reverse recovery energy  
1550  
620  
Erec  
1180  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.013 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.025 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.012  
0.024  
K/W  
K/W  
Diode thermal resistance  
case to heatsink  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
130 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 19  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
da  
mm  
Term. to term: 19  
Term. to base: 32  
Term. to term: 32  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Mass  
ds  
m
mm  
g
920  
7)  
Thermal and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 3 of 9  
5SNA 0800N330100  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for industrial level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 4 of 9  
5SNA 0800N330100  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCE = 20 V  
25 °C  
125 °C  
125 °C  
25 °C  
VGE = 15 V  
5 6  
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
0
1
2
3
4
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
17 V  
15 V  
17 V  
15 V  
13 V  
11 V  
13 V  
11 V  
9 V  
9 V  
Tvj = 125 °C  
Tvj = 25°C  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 5 of 9  
5SNA 0800N330100  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VCC = 1800 V  
VGE = ±15 V  
RG = 2.2 ohm  
Tvj = 125 °C  
Ls = 100 nH  
VCC = 1800 V  
IC = 800 A  
Eon  
Eon  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
Eoff  
Eoff  
Esw [J] = 1.03 x 10-6 x IC2 + 1.86 x 10-3 x IC + 419 x 10-3  
0
5
10  
15  
20  
25  
0
400  
800  
1200  
1600  
RG [ohm]  
IC [A]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 1800 V  
IC = 800 A  
td(off)  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
td(off)  
tf  
td(on)  
1
tr  
1
td(on)  
tf  
0.1  
tr  
VCC = 1800 V  
RG = 2.2 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
0.1  
0.01  
0
5
10  
15  
20  
25  
0
400  
800  
1200  
1600  
RG [ohm]  
IC [A]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 6 of 9  
5SNA 0800N330100  
1000  
100  
10  
20  
15  
10  
5
VGE = 0V  
fOSC = 1 MHz  
VOSC = 50 mV  
Cies  
VCC = 1800 V  
VCC = 2500 V  
Coes  
Cres  
IC = 800 A  
Tvj = 25 °C  
0
1
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
35  
VCE [V]  
Qg [µC]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 2500 V, Tvj = 125 °C  
VGE = ±15 V, RG = 2.2 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000 1500 2000 2500 3000 3500  
VCE [V]  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 7 of 9  
5SNA 0800N330100  
1500  
1250  
1000  
750  
500  
250  
0
1200  
1000  
800  
600  
400  
200  
0
VCC = 1800 V  
VGE = ±15 V  
RG = 2.2 ohm  
Tvj = 125 °C  
Ls = 100 nH  
Erec  
Qrr  
Qrr  
Irr  
Erec  
Irr  
VCC = 1800 V  
IF = 800 A  
Tvj = 125 °C  
Ls = 100 nH  
Erec [mJ] = -600 x 10-6 x IF2 + 1.72 x IF + 190  
0
1
2
3
4
0
400  
800  
IF [A]  
1200  
1600  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
1600  
1400  
2000  
VCC £ 2500 V  
di/dt 5000 A/µs  
£
Tvj = 125 °C  
1600  
1200  
800  
400  
0
25°C  
1200  
125°C  
1000  
800  
600  
400  
200  
0
0
1
2
3
4
0
500 1000 1500 2000 2500 3000 3500  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1591-00 Jan 07  
page 8 of 9  
5SNA 0800N330100  
0.1  
Analytical function for transient thermal  
impedance:  
Zth(j-c) Diode  
n
Z (t) = R (1-e-t/ti )  
0.01  
Zth(j-c) IGBT  
å
th (j-c)  
i
i=1  
i
1
2
3
4
Ri(K/kW) 8.78  
2.06 0.961 0.948  
0.001  
207.4 30.1  
7.55  
1.57  
ti(ms)  
Ri(K/kW) 17.1  
4.28  
1.92  
7.53  
1.92  
1.57  
203.6 30.1  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak (available upon request)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA 1591-00 Jan 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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