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5SNA1200G3301

型号：

5SNA1200G3301

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

463 K

下载PDF手册
VCE  
IC  
=
=
3300 V  
1200 A  
ABB HiPakTM  
IGBT Module  
5SNA 1200G330100  
Doc. No. 5SYA1563-00 Apr.06  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· High insulation package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V  
3300  
1200  
2400  
20  
V
A
A
V
W
A
A
Tc = 80 °C  
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
-20  
Tc = 25 °C, per switch (IGBT)  
11750  
1200  
2400  
IFRM  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
14000  
10  
A
VCC = 2500 V, VCEM CHIP £ 3300 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
10200  
125  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 1200G330100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
3300  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
3.1  
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 1200 A, VGE = 15 V  
VCE = 3300 V, VGE = 0 V  
3.5 3.85 4.3  
12  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
120  
Gate leakage current  
IGES  
-500  
5.5  
500  
7.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 240 mA, VCE = VGE, Tvj = 25 °C  
IC = 1200 A, VCE = 1800 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
10.9  
µC  
Input capacitance  
Cies  
Coes  
Cres  
187  
11.6  
2.22  
530  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1800 V,  
IC = 1200 A,  
RG = 1.5 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
500  
230  
tr  
Ls = 125 nH, inductive load Tvj = 125 °C  
230  
VCC = 1800 V,  
IC = 1200 A,  
RG = 1.5 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1200  
1330  
350  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 125 nH, inductive load Tvj = 125 °C  
440  
VCC = 1800 V, IC = 1200 A,  
VGE = ±15 V, RG = 1.5 W,  
Ls = 125 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1260  
1730  
1340  
1900  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 1800 V, IC = 1200 A,  
VGE = ±15 V, RG = 1.5 W,  
Ls = 125 nH, inductive load  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
5100  
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V  
Module stray inductance  
Ls CE  
18  
0.07  
0.1  
nH  
TC = 25 °C  
TC = 125 °C  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 2 of 9  
5SNA 1200G330100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.3  
6)  
Forward voltage  
VF  
Irr  
IF = 1200 A  
V
2.0 2.35 2.7  
1090  
A
Reverse recovery current  
Recovered charge  
1420  
VCC = 1800 V,  
IF = 1200 A,  
VGE = ±15 V,  
RG = 1.5 W  
Ls = 125 nH  
inductive load  
710  
µC  
Qrr  
trr  
1300  
560  
ns  
Reverse recovery time  
Reverse recovery energy  
1280  
880  
mJ  
Erec  
1670  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Package properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.0085 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.017 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.009  
0.018  
K/W  
K/W  
V
Diode thermal resistance  
case to heatsink  
Partial discharge extinction  
voltage  
Ve  
5100  
f = 50 Hz, QPD £ 10pC (acc. to IEC 61287)  
Comparative tracking index  
CTI  
³ 600  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
190 x 140 x 48  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 40  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
Surface creepage distance  
da  
mm  
Term. to term: 26  
Term. to base: 64  
Term. to term: 56  
according to IEC 60664-1  
and EN 50124-1  
ds  
m
mm  
g
Mass  
1760  
7)  
Package and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 3 of 9  
5SNA 1200G330100  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 4 of 9  
5SNA 1200G330100  
2400  
2000  
1600  
1200  
800  
400  
0
2400  
2000  
1600  
1200  
800  
400  
0
VCE = 20V  
25 °C  
125 °C  
125°C  
25°C  
VGE = 15 V  
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
0
1
2
3
4
5
6
VGE [V]  
VCE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
2400  
2000  
1600  
1200  
800  
400  
0
2400  
2000  
1600  
1200  
800  
400  
0
Tvj = 25 °C  
17 V  
17 V  
15 V  
15 V  
13 V  
11 V  
13 V  
11 V  
9 V  
9 V  
Tvj = 125 °C  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 5 of 9  
5SNA 1200G330100  
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
VCC = 1800 V  
RG = 1.5 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 125 nH  
VCC = 1800 V  
IC = 1200 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 125 nH  
Eon  
Eon  
Eoff  
Eoff  
Esw [J] = 462 x 10-9 x IC2 + 206 x 10-5 x IC + 0.56  
0
5
10  
15  
0
500  
1000  
1500  
2000  
2500  
RG [ohm]  
IC [A]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 1800 V  
IC = 1200 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 125 nH  
td(off)  
td(on)  
tr  
td(off)  
tf  
1
1
td(on)  
tf  
0.1  
tr  
VCC = 1800 V  
RG = 1.5 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 125 nH  
0.1  
0.01  
0
5
10  
15  
0
500  
1000  
1500  
2000  
2500  
RG [ohm]  
IC [A]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 6 of 9  
5SNA 1200G330100  
1000  
100  
10  
20  
15  
10  
5
VGE = 0V  
fOSC = 1 MHz  
VOSC = 50 mV  
VCC = 1800 V  
Cies  
VCC = 2500 V  
Coes  
Cres  
IC = 1200 A  
Tvj = 25 °C  
0
1
0
1
2
3
4
5
6
7
8
9
0
5
10  
15  
20  
25  
30  
35  
VCE [V]  
Qg [µC]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 2500 V, Tvj = 125 °C  
VGE = ±15 V, RG = 1.5 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000 1500 2000 2500 3000 3500  
VCE [V]  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 7 of 9  
5SNA 1200G330100  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCC = 1800 V  
RG = 1.5 ohm  
Tvj = 125 °C  
Ls = 125 nH  
Erec  
Qrr  
Irr  
Qrr  
Erec  
600  
Irr  
VCC = 1800 V  
IF = 1200 A  
Tvj = 125 °C  
Ls = 125 nH  
400  
200  
Erec [mJ] = -3.0 x 10-4 x IF2 + 1.38 x IF + 397  
0
0
500  
1000  
1500  
2000  
2500  
0
1
2
3
4
5
6
7
IF [A]  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
2800  
2400  
VCC £ 2500 V  
di/dt 8000 A/µs  
Tvj = 125 °C  
£
2400  
2000  
1600  
1200  
800  
400  
0
2000  
25°C  
125°C  
1600  
1200  
800  
400  
0
0
1
2
3
4
0
500 1000 1500 2000 2500 3000 3500  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1563-00 Apr.06  
page 8 of 9  
5SNA 1200G330100  
0.1  
Analytical function for transient thermal  
impedance:  
n
Zth(j-c) Diode  
Z (t) = R (1-e-t/ti )  
0.01  
å
th (j-c)  
i
Zth(j-c) IGBT  
i=1  
i
1
2
3
4
5
Ri(K/kW) 5.85  
207  
1.38 0.641 0.632  
0.001  
30.1  
7.55  
1.57  
ti(ms)  
Ri(K/kW) 11.5  
204  
2.89  
30.1  
1.23  
7.53  
1.3  
1.57  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1563-00 Apr.06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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