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5SND0800M1701

型号：

5SND0800M1701

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

326 K

下载PDF手册
VCE  
IC  
=
=
1700 V  
800 A  
ABB HiPakTM  
IGBT Module  
5SND 0800M170100  
Doc. No. 5SYA1589-00 Oct 06  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
· 2 switches in one package  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V, Tvj ≥ 25 °C  
Tc = 80 °C  
1700  
800  
V
A
A
V
W
A
A
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
1600  
20  
-20  
Tc = 25 °C, per switch (IGBT)  
4800  
800  
IFRM  
1600  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
6600  
10  
A
VCC = 1200 V, VCEM CHIP £ 1700 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
4000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SND 0800M170100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
1700  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.0  
2.3  
2.3  
2.6  
2.6  
2.9  
4
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 800 A, VGE = 15 V  
VCE = 1700 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
40  
Gate leakage current  
IGES  
-500  
4.5  
500  
6.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 80 mA, VCE = VGE, Tvj = 25 °C  
IC = 800 A, VCE = 900 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
7.3  
µC  
Input capacitance  
Cies  
Coes  
Cres  
76  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
7.3  
Reverse transfer capacitance  
3.2  
VCC = 900 V,  
IC = 800 A,  
RG = 1.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
485  
485  
165  
170  
790  
875  
160  
185  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
tr  
Ls = 80 nH, inductive load  
VCC = 900 V,  
IC = 800 A,  
RG = 1.8 W,  
VGE = ±15 V,  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 80 nH, inductive load  
VCC = 900 V, IC = 800 A,  
VGE = ±15 V, RG = 1.2 W,  
Ls = 80 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
160  
250  
220  
300  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 900 V, IC = 800 A,  
VGE = ±15 V, RG = 1.8 W,  
Ls = 80 nH, inductive load  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
3600  
A
VCC = 1200 V, VCEM CHIP ≤ 1700 V  
Module stray inductance  
Ls CE  
per switch  
24  
nH  
TC = 25 °C  
TC = 125 °C  
0.18  
0.255  
Resistance, terminal-chip  
RCC’+EE’ per switch  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 2 of 9  
5SND 0800M170100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1.65 2.0  
V
6)  
Forward voltage  
VF  
Irr  
IF = 800 A  
1.7  
560  
730  
210  
385  
690  
975  
150  
270  
2.0  
Reverse recovery current  
Recovered charge  
A
VCC = 900 V,  
IF = 800 A,  
VGE = ±15 V,  
RG = 1.2 W  
Ls = 80 nH  
Qrr  
trr  
µC  
ns  
Reverse recovery time  
Reverse recovery energy  
inductive load  
Erec  
mJ  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
per switch  
Rth(j-c)DIODE  
0.021 K/W  
Diode thermal resistance  
junction to case  
0.036 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.024  
0.048  
K/W  
K/W  
Diode thermal resistance  
case to heatsink  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
130 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 10  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
da  
mm  
Term. to term: 10  
Term. to base: 15  
Term. to term: 15  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Mass  
ds  
m
mm  
g
920  
7)  
Thermal and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 3 of 9  
5SND 0800M170100  
Electrical configuration  
2)  
Outline drawing  
E1  
C2  
C1  
E2  
E2  
E1  
G1  
G2  
C1  
C2  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for industrial level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 4 of 9  
5SND 0800M170100  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCE = 25 V  
25 °C  
125 °C  
125 °C  
25 °C  
VGE = 15 V  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10 11 12  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
17V  
15V  
13V  
11V  
9V  
17V  
15V  
13V  
11V  
9V  
Tvj = 125 °C  
Tvj = 25 °C  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 5 of 9  
5SND 0800M170100  
0.90  
0.80  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
2.0  
1.5  
1.0  
0.5  
0.0  
VCC = 900 V  
IC = 800 A  
VCC = 900 V  
VGE = ±15 V  
RGon = 1.2 ohm  
RGoff = 1.8 ohm  
Tvj = 125 °C  
Ls = 80 nH  
Eon  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 80 nH  
Eon  
Eoff  
Eoff  
Esw [J] = 347 x 10-9 x IC2 + 280 x 10-6 x IC + 97.7 x 10-3  
0
5
10  
15  
20  
25  
0
400  
800  
IC [A]  
1200  
1600  
RG [ohm]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 900 V  
IC = 800 A  
td(off)  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 80 nH  
td(off)  
td(on)  
1
td(on)  
1
tf  
tr  
0.1  
VCC = 900 V  
tr  
RGon = 1.2 ohm  
RGoff = 1.8 ohm  
VGE = ±15 V  
Tvj = 125 °C  
tf  
Ls = 80 nH  
0.1  
0.01  
0
5
10  
15  
20  
25  
0
400  
800  
IC [A]  
1200  
1600  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 6 of 9  
5SND 0800M170100  
100  
20  
15  
10  
5
Cies  
VCC = 900 V  
VCC = 1300 V  
10  
Coes  
Cres  
VGE = 0V  
IC = 800 A  
Tvj = 25 °C  
fOSC = 1 MHz  
VOSC = 50 mV  
0
1
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
35  
VCE [V]  
Qg [µC]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 1200 V, Tvj = 125 °C  
VGE = ±15 V, RG = 1.8 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000  
1500  
2000  
VCE [V]  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 7 of 9  
5SND 0800M170100  
Erec [mJ] = -0.105 x 10-3 x IF2 + 352 x 10-3 x IF + 49  
400  
300  
200  
100  
0
800  
600  
400  
200  
0
400  
300  
200  
100  
0
800  
Irr  
Irr  
Qrr  
600  
400  
Qrr  
Erec  
Erec  
VCC = 900 V  
200  
VCC = 900 V  
VGE = ±15 V  
RG = 1.2 ohm  
Tvj = 125 °C  
Ls = 80 nH  
IF = 800 A  
Tvj = 125 °C  
Ls = 80 nH  
0
0
1
2
3
4
5
0
400  
800  
IF [A]  
1200  
1600  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
1600  
1400  
VCC £ 1200 V  
1600  
1200  
800  
400  
0
di/dt 5 kA/µs  
£
Tvj = 125 °C  
25°C  
1200  
125°C  
1000  
800  
600  
400  
200  
0
0
500  
1000  
1500  
2000  
0
0.5  
1
1.5  
2
2.5  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1589-00 Oct 06  
page 8 of 9  
5SND 0800M170100  
0.1  
Analytical function for transient thermal  
impedance:  
Zth(j-c) Diode  
Zth(j-c) IGBT  
n
Z (t) = R (1-e-t/ti )  
0.01  
å
th (j-c)  
i
i=1  
i
1
2
3
4
Ri(K/kW) 15.2  
202  
3.6  
1.49  
2.01  
0.74  
0.001  
20.3  
0.52  
ti(ms)  
Ri(K/kW) 25.3  
210  
5.78  
29.6  
2.6  
2.52  
1.49  
7.01  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak (available upon request)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1589-00 Oct 06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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