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5SNA1600N1701

型号：

5SNA1600N1701

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

322 K

下载PDF手册
VCE  
IC  
=
=
1700 V  
1600 A  
ABB HiPakTM  
IGBT Module  
5SNA 1600N170100  
Doc. No. 5SYA1564-01 Oct 06  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V, Tvj ≥ 25 °C  
Tc = 80 °C  
1700  
1600  
3200  
20  
V
A
A
V
W
A
A
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
-20  
Tc = 25 °C, per switch (IGBT)  
9100  
1600  
3200  
IFRM  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
13200  
10  
A
VCC = 1200 V, VCEM CHIP £ 1700 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
4000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 1600N170100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
1700  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.0  
2.3  
2.3  
2.6  
2.6  
2.9  
8
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 1600 A, VGE = 15 V  
VCE = 1700 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
80  
Gate leakage current  
IGES  
-500  
4.5  
500  
6.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 160 mA, VCE = VGE, Tvj = 25 °C  
IC = 1600 A, VCE = 900 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
14.6  
µC  
Input capacitance  
Cies  
Coes  
Cres  
152  
14.6  
6.4  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 900 V,  
IC = 1600 A,  
RG = 0.82 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
290  
300  
175  
190  
1050  
1140  
150  
170  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
tr  
Ls = 50 nH, inductive load  
VCC = 900 V,  
IC = 1600 A,  
RG = 0.82 W,  
VGE = ±15 V,  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 50 nH, inductive load  
VCC = 900 V, IC = 1600 A,  
VGE = ±15 V, RG = 0.82 W,  
Ls = 50 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
380  
530  
460  
590  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 900 V, IC = 1600 A,  
VGE = ±15 V, RG = 0.82 W,  
Ls = 50 nH, inductive load  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
7200  
A
VCC = 1200 V, VCEM CHIP ≤ 1700 V  
Module stray inductance  
Ls CE  
15  
nH  
TC = 25 °C  
TC = 125 °C  
0.10  
0.13  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 2 of 9  
5SNA 1600N170100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1.65 2.0  
V
6)  
Forward voltage  
VF  
Irr  
IF = 1600 A  
1.7  
1090  
1400  
390  
690  
620  
830  
280  
480  
2.0  
Reverse recovery current  
Recovered charge  
A
VCC = 900 V,  
IF = 1600 A,  
VGE = ±15 V,  
RG = 0.82 W  
Ls = 50 nH  
Qrr  
trr  
µC  
ns  
Reverse recovery time  
Reverse recovery energy  
inductive load  
Erec  
mJ  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.011 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.018 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.012  
0.024  
K/W  
K/W  
Diode thermal resistance  
case to heatsink  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
130 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 19  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
da  
mm  
Term. to term: 19  
Term. to base: 32  
Term. to term: 32  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Mass  
ds  
m
mm  
g
920  
7)  
Thermal and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 3 of 9  
5SNA 1600N170100  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for industrial level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 4 of 9  
5SNA 1600N170100  
3200  
2800  
2400  
2000  
1600  
1200  
800  
3200  
2800  
2400  
2000  
1600  
1200  
800  
VCE = 25 V  
25 °C  
125 °C  
125 °C  
25 °C  
400  
400  
VGE = 15 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
3200  
2800  
2400  
2000  
1600  
1200  
800  
3200  
2800  
2400  
2000  
1600  
1200  
800  
17V  
15V  
13V  
11V  
9V  
17V  
15V  
13V  
11V  
9V  
400  
400  
Tvj = 125 °C  
Tvj = 25 °C  
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 5 of 9  
5SNA 1600N170100  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VCC = 900 V  
CEM ≤ 1700 V  
VCC = 900 V  
CEM ≤ 1700 V  
V
V
RG = 0.82 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 50 nH  
IC = 1600 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 50 nH  
Eon  
Eoff  
Eon  
Eoff  
Esw[mJ] = 1.63 x 10-4 x IC2 +0.275 x IC + 258  
0
1000  
2000  
IC [A]  
3000  
4000  
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
RG [ohm]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 900 V  
V
CEM ≤ 1700 V  
td(off)  
IC = 1600 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 50 nH  
td(off)  
1
td(on)  
tr  
td(on)  
1
tf  
tr  
0.1  
VCC = 900 V  
CEM ≤ 1700 V  
V
tf  
RG = 0.82 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 50 nH  
0.01  
0.1  
0
1000  
2000  
IC [A]  
3000  
4000  
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 6 of 9  
5SNA 1600N170100  
1000  
100  
10  
20  
15  
10  
5
VCC = 900 V  
Cies  
VCC = 1300 V  
Coes  
Cres  
VGE = 0 V  
fOSC = 1 MHz  
VOSC = 50 mV  
IC = 1600 A  
Tvj = 25 °C  
0
1
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
35  
VCE [V]  
Qg [µC]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 1200 V, Tvj = 125 °C  
VGE = ±15 V, RG = 0.82 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000  
1500  
2000  
VCE [V]  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 7 of 9  
5SNA 1600N170100  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
1600  
Irr  
VCC = 900 V  
IC = 1600 A  
Tvj = 125 °C  
Ls = 50 nH  
VCC = 900 V  
RG = 0.82 ohm  
Tvj = 125 °C  
Ls = 50 nH  
Irr  
1400  
1200  
1000  
800  
600  
400  
200  
0
Qrr  
Qrr  
Erec  
Erec  
Erec [mJ] = -4 x 10-5 x IF2 + 0.314 x IF + 95  
0
1000  
2000  
IF [A]  
3000  
4000  
0
1
2
3
4
5
6
7
8
9 10 11  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
3200  
2800  
3600  
VCC £ 1200 V  
di/dt 8 kA/µs  
£
3200  
2800  
2400  
2000  
1600  
1200  
800  
Tvj = 125 °C  
25°C  
2400  
125°C  
2000  
1600  
1200  
800  
400  
0
400  
0
0
0.5  
1
1.5  
2
2.5  
0
500  
1000  
1500  
2000  
VF [V]  
VR [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1564-01 Oct 06  
page 8 of 9  
5SNA 1600N170100  
0.1  
Analytical function for transient thermal  
impedance:  
Zth(j-c) Diode  
n
Z (t) = R (1-e-t/ti )  
0.01  
å
th (j-c)  
i
Zth(j-c) IGBT  
i=1  
i
1
2
3
4
Ri(K/kW) 7.59  
202  
1.8  
0.743 0.369  
0.001  
20.3  
2.01  
0.52  
ti(ms)  
Ri(K/kW) 12.6  
210  
2.89  
29.6  
1.3  
1.26  
1.49  
7.01  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak (available upon request)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1564-01 Oct 06  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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