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5SNA1500E3303

型号：

5SNA1500E3303

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

217 K

下载PDF手册
VCE  
IC  
=
=
3300 V  
1500 A  
ABB HiPakTM  
IGBT Module  
5SNA 1500E330300  
Doc. No. 5SYA 1595-00 July 07  
· Ultra low-loss, rugged SPT+ chip-set  
· Smooth switching SPT+ chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V  
3300  
1500  
3000  
20  
V
A
A
V
W
A
A
Tc = 85 °C  
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 85 °C  
-20  
Tc = 25 °C, per switch (IGBT)  
11750  
1500  
3000  
IFRM  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
14000  
10  
A
VCC = 2500 V, VCEM CHIP £ 3300 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
6000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 1500E330300  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
3300  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.4  
3.0  
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 1500 A, VGE = 15 V  
VCE = 3300 V, VGE = 0 V  
3.4  
12  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
120  
500  
6.5  
Gate leakage current  
IGES  
-500  
4.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 240 mA, VCE = VGE, Tvj = 25 °C  
IC = 1500 A, VCE = 1800 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
11.0  
µC  
Input capacitance  
Cies  
Coes  
Cres  
152  
12.2  
3.77  
600  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1800 V,  
IC = 1500 A,  
RG = 1.0 W, CGE = 220 nF,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
570  
220  
tr  
Ls = 100 nH, inductive load Tvj = 125 °C  
250  
VCC = 1800 V,  
IC = 1500 A,  
RG = 1.5 W, CGE = 220 nF,  
VGE = ±15 V,  
Ls = 100 nH, inductive load Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1480  
1680  
380  
Turn-off delay time  
Fall time  
td(off)  
tf  
470  
VCC = 1800 V,  
IC = 1500 A,  
RG = 1.0 W, CGE = 220 nF,  
VGE = ±15 V,  
Ls = 100 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1380  
2000  
1940  
Turn-on switching energy  
Turn-off switching energy  
Eon  
mJ  
mJ  
VCC = 1800 V,  
IC = 1500 A,  
RG = 1.5 W, CGE = 220 nF,  
VGE = ±15 V,  
Ls = 100 nH, inductive load  
Eoff  
2680  
6500  
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V  
Module stray inductance  
Ls CE  
10  
nH  
TC = 25 °C  
TC = 125 °C  
0.06  
0.085  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 2 of 9  
5SNA 1500E330300  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.0  
6)  
Forward voltage  
VF  
Irr  
IF = 1500 A  
V
2.1 2.55  
1850  
A
Reverse recovery current  
Recovered charge  
2100  
VCC = 1800 V,  
IF = 1500 A,  
VGE = ±15 V,  
RG = 1.0 W,  
CGE = 220 nF,  
Ls = 100 nH  
inductive load  
960  
µC  
Qrr  
trr  
1590  
750  
ns  
Reverse recovery time  
Reverse recovery energy  
1160  
1200  
mJ  
Erec  
2030  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.0085 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.017 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.009  
0.018  
K/W  
K/W  
Diode thermal resistance  
case to heatsink  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
190 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 23  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
da  
mm  
Term. to term: 19  
Term. to base: 33  
Term. to term: 32  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Mass  
ds  
m
mm  
g
1380  
7)  
Thermal and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 3 of 9  
5SNA 1500E330300  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 4 of 9  
5SNA 1500E330300  
3000  
2500  
2000  
1500  
1000  
500  
3000  
2500  
2000  
1500  
1000  
500  
VCE = 20 V  
25 °C  
125 °C  
125 °C  
25 °C  
VGE = 15V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
3000  
2500  
2000  
1500  
1000  
500  
3000  
2500  
2000  
1500  
1000  
500  
19 V  
17 V  
15 V  
19 V  
17 V  
15 V  
13 V  
13 V  
11 V  
11 V  
9 V  
9 V  
Tvj = 25 °C  
Tvj = 125 °C  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
VCEsat [V]  
VCEsat [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 5 of 9  
5SNA 1500E330300  
6
5
4
3
2
1
0
12  
11  
10  
9
VCC = 1800 V  
IC = 1500 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
CGE = 220 nF  
VCC = 1800 V  
VGE = ±15 V  
Eon  
RGon = 1.0 ohm  
RGoff = 1.5 ohm  
CGE = 220 nF  
Tvj = 125 °C  
Eoff  
8
Ls = 100 nH  
7
Eon  
6
5
4
Eoff  
3
2
1
Esw [J] = 445 x 10-9 x IC2 + 1.95 x 10-3 x IC + 745 x 10-3  
0
0
1
2
3
4
5
6
7
8
9
10 11  
0
500  
1000  
1500  
IC [A]  
2000  
2500  
3000  
RG [ohm]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 1800 V  
IC = 1500 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
CGE = 220 nF  
td(off)  
td(on)  
td(off)  
1
tf  
tr  
td(on)  
1
VCC = 1800 V  
RGon = 1.0 ohm  
RGoff = 1.5 ohm  
CGE = 220 nF  
VGE = ±15 V  
tf  
0.1  
tr  
Tvj = 125 °C  
Ls = 100 nH  
0.1  
0.01  
0
1
2
3
4
5
6
7
8
9
10 11  
0
500  
1000  
1500  
IC [A]  
2000  
2500  
3000  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 6 of 9  
5SNA 1500E330300  
1000  
100  
10  
20  
15  
10  
5
VCC = 1800 V  
Cies  
Coes  
Cres  
VCC = 2400 V  
VGE = 0V  
fOSC = 1 MHz  
VOSC = 50 mV  
IC = 1500 A  
Tvj = 25 °C  
0
1
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
35  
Qg [µC]  
VCE [V]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 2500 V, Tvj = 125 °C  
VGE = ±15 V, RG = 1.5 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000 1500 2000 2500  
VCE [V]  
3000 3500  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 7 of 9  
5SNA 1500E330300  
Erec  
2500  
2000  
1500  
1000  
500  
2000  
1500  
1000  
500  
0
Qrr  
Irr  
Qrr  
VCC = 1800 V  
VGE = ±15 V  
RGon = 1.0 ohm  
RGoff = 1.5 ohm  
CGE = 220 nF  
Tvj = 125 °C  
Erec  
Irr  
VCC = 1800 V  
IF = 1500 A  
Ls = 100 nH  
Tvj = 125 °C  
Ls = 100 nH  
CGE = 220 nF  
Erec [mJ] = -239 x 10-6 x IF2 + 1.45 x IF + 355  
0
0
1
2
3
4
5
6
7
0
500  
1000 1500 2000 2500 3000  
IF [A]  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
3000  
VCC £ 2500 V  
3000  
di/dt 10 kA/µs  
£
Tvj = 125 °C  
2500  
25 °C  
2500  
2000  
1500  
1000  
500  
2000  
125 °C  
1500  
1000  
500  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
500 1000 1500 2000 2500 3000 3500  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1595-00 July 07  
page 8 of 9  
5SNA 1500E330300  
0.1  
Analytical function for transient thermal  
impedance:  
n
Zth(j-c) Diode  
0.01  
Z (t) = R (1-e-t/ti )  
å
th (j-c)  
i
Zth(j-c) IGBT  
i=1  
i
1
2
3
4
Ri(K/kW) 5.854 1.375 0.641 0.632  
207.4 30.1 7.55 1.57  
0.001  
ti(ms)  
Ri(K/kW) 11.54 2.887 1.229 1.295  
203.6 30.1  
7.53  
1.57  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak (available upon request)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA 1595-00 July 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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