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5SNA1200E2501

型号：

5SNA1200E2501

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

204 K

下载PDF手册
VCE  
IC  
=
=
2500 V  
1200 A  
ABB HiPakTM  
IGBT Module  
5SNA 1200E250100  
Doc. No. 5SYA 1557-02 July 04  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V  
2500  
1200  
2400  
20  
V
A
A
V
W
A
A
Tc = 80 °C  
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
-20  
Tc = 25 °C, per switch (IGBT)  
11000  
1200  
2400  
IFRM  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
11000  
10  
A
VCC = 1900 V, VCEM CHIP £ 2500 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
5000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
M1  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
M2  
8
10  
M3  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 1200E250100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
2500  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.2  
2.8  
2.5  
3.1  
2.9  
3.4  
12  
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 1200 A, VGE = 15 V  
VCE = 2500 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
60  
120  
500  
7.5  
Gate leakage current  
IGES  
-500  
5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 240 mA, VCE = VGE, Tvj = 25 °C  
IC = 1200 A, VCE = 1250 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
12.2  
µC  
Input capacitance  
Cies  
Coes  
Cres  
186  
13.7  
2.98  
375  
365  
240  
250  
875  
980  
300  
345  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1250 V,  
IC = 1200 A,  
RG = 1.5 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
tr  
Ls = 100 nH, inductive load Tvj = 125 °C  
VCC = 1250 V,  
IC = 1200 A,  
RG = 1.5 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 100 nH, inductive load Tvj = 125 °C  
VCC = 1250 V, IC = 1200 A,  
VGE = ±15 V, RG = 1.5 W,  
Ls = 100 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
820  
1150  
980  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 1250 V, IC = 1200 A,  
VGE = ±15 V, RG = 1.5 W,  
Ls = 100 nH, inductive load  
1250  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
5800  
A
VCC = 1900 V, VCEM CHIP ≤ 2500 V  
Module stray inductance  
Ls CE  
10  
nH  
TC = 25 °C  
TC = 125 °C  
0.06  
0.085  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 2 of 9  
5SNA 1200E250100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1.5 1.75 2.0  
V
6)  
Forward voltage  
VF  
Irr  
IF = 1200 A  
1.4  
1.8  
965  
2.0  
Reverse recovery current  
Recovered charge  
A
1180  
680  
VCC = 1250 V,  
IF = 1200 A,  
VGE = ±15 V,  
RG = 1.5 W  
Ls = 100 nH  
inductive load  
Qrr  
trr  
µC  
ns  
1150  
1250  
1710  
580  
Reverse recovery time  
Reverse recovery energy  
Erec  
mJ  
960  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.009 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.017 K/W  
2)  
Thermal resistance case  
to heatsink  
Rth(c-h)  
per module, l grease = 1W/m x K  
0.006  
K/W  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
190 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 23  
Term. to term: 19  
Term. to base: 33  
Term. to term: 32  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance  
DC  
mm  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Weight  
DSC  
mm  
g
1500  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 3 of 9  
5SNA 1200E250100  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 4 of 9  
5SNA 1200E250100  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
25 °C  
125 °C  
125 °C  
25 °C  
600  
600  
400  
400  
200  
200  
VGE = 15 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
17 V  
15 V  
13 V  
11 V  
17 V  
15 V  
13 V  
11 V  
9 V  
600  
600  
9 V  
400  
400  
200  
200  
Tvj = 125 °C  
Tvj = 25°C  
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 5 of 9  
5SNA 1200E250100  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6
5
4
3
2
1
0
VCC = 1250 V  
RG = 1.5 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
VCC = 1250 V  
IC = 1200 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
Eon  
Eon  
Eoff  
Eoff  
Esw[mJ] = 325 x 10-6 x IC + 1.31 x IC +347  
2
0
5
10  
15  
0
500  
1000  
1500  
2000  
2500  
RG [ohm]  
IC [A]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 1250 V  
IC = 1200 A  
VGE = ±15 V  
td(off)  
td(off)  
Tvj = 125 °C  
Ls = 100 nH  
1
td(on)  
tr  
tf  
1
td(on)  
0.1  
tf  
VCC = 1250 V  
RG = 1.5 ohm  
tr  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
0.01  
0.1  
0
500  
1000  
IC [A]  
1500  
2000  
2500  
0
5
10  
15  
20  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 6 of 9  
5SNA 1200E250100  
1000  
100  
10  
20  
15  
10  
5
VGE = 0 V  
fOSC = 1 MHz  
VOSC = 50 mV  
Cies  
VCC = 1250 V  
VCC = 1800 V  
Coes  
Cres  
IC = 1200 A  
Tvj = 25 °C  
0
1
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
35  
VCE [V]  
Qg [µC]  
Fig. 9  
Typical capacitances  
Fig. 10 Typical gate charge characteristics  
vs collector-emitter voltage  
2.5  
2
VCC £ 1900 V, Tvj = 125 °C  
VGE = ±15 V, RG = 1.5 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000  
1500  
2000  
2500  
3000  
VCE [V]  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 7 of 9  
5SNA 1200E250100  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1200  
1000  
800  
600  
400  
200  
0
1800  
VCC = 1250 V  
RG = 1.5 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
VCC = 1250 V  
IF = 1200 A  
Tvj = 125 °C  
Ls = 100 nH  
Qrr  
Irr  
1500  
Irr  
Erec  
1200  
Qrr  
900  
600  
300  
0
Erec  
Erec [mJ] = -1.86 x 10 -4 x IF + 0.903 x IF + 181  
2
0
500  
1000  
1500  
2000  
2500  
0
1
2
3
4
5
6
IF [A]  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
2400  
2200  
2000  
2800  
VCC £ 1900 V  
di/dt 8000 A/µs  
£
2400  
2000  
1600  
1200  
800  
400  
0
Tvj = 125 °C  
1800  
25 °C  
1600  
125 °C  
1400  
1200  
1000  
800  
600  
400  
200  
0
0
500  
1000  
1500  
2000  
2500  
3000  
0
0.5  
1
1.5  
2
2.5  
VF [V]  
VR [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1557-02 July 04  
page 8 of 9  
5SNA 1200E250100  
0.1  
Analytical function for transient thermal  
impedance:  
n
Zth(j-c) Diode  
0.01  
Z (t) = R (1-e-t/ti )  
å
th (j-c)  
i
Zth(j-c) IGBT  
i=1  
i
1
2
3
4
5
Ri(K/kW) 6.287 1.685 0.685 0.337  
0.001  
194.7 20.4  
1.98  
0.52  
ti(ms)  
Ri(K/kW) 11.54 2.92  
203.4 29.3  
1.28  
6.96  
1.27  
1.5  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
t [s]  
1
10  
Fig. 16 Thermal impedance vs time  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA 1557-02 July 04  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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