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5SNA0400J6501

型号：

5SNA0400J6501

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

181 K

下载PDF手册
VCE  
IC  
=
=
6500 V  
400 A  
ABB HiPakTM  
IGBT Module  
5SNA 0400J650100  
Doc. No. 5SYA 1592-01 Jun 07  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· High insulation package  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
VGE = 0 V, Tvj ≥ 25 °C  
Tc = 85 °C  
6500  
400  
800  
20  
V
A
A
V
W
A
A
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 85 °C  
-20  
Tc = 25 °C, per switch (IGBT)  
7350  
400  
800  
IFRM  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave  
Surge current  
IFSM  
tpsc  
4000  
10  
A
VCC = 4400 V, VCEM CHIP £ 6500 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
1 min, f = 50 Hz  
10200  
125  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNA 0400J650100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
6500  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
4.2  
5.4  
4.8  
5.9  
8
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 400 A, VGE = 15 V  
VCE = 6500 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
35  
80  
500  
8
Gate leakage current  
IGES  
-500  
6
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 160 mA, VCE = VGE, Tvj = 25 °C  
7.4  
5.3  
IC = 400 A, VCE = 3600 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
µC  
Input capacitance  
Cies  
Coes  
Cres  
95.3  
4.41  
0.85  
700  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 3600 V,  
IC = 400 A,  
RG = 5.6 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
630  
250  
tr  
Ls = 280 nH, inductive load Tvj = 125 °C  
220  
VCC = 3600 V,  
IC = 400 A,  
RG = 5.6 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1410  
1700  
650  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 280 nH, inductive load Tvj = 125 °C  
980  
VCC = 3600 V, IC = 400 A,  
VGE = ±15 V, RG = 5.6 W,  
Ls = 280 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2250  
2800  
1340  
2120  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 3600 V, IC = 400 A,  
VGE = ±15 V, RG = 5.6 W,  
Ls = 280 nH, inductive load  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
1800  
A
VCC = 4400 V, VCEM CHIP ≤ 6500 V  
Module stray inductance  
Ls CE  
20  
0.1  
nH  
TC = 25 °C  
TC = 125 °C  
Resistance, terminal-chip  
RCC’+EE’  
mΩ  
0.15  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 2 of 9  
5SNA 0400J650100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
3.2  
3.4  
3.8  
4.0  
6)  
Forward voltage  
VF  
Irr  
IF = 400 A  
V
A
510  
680  
450  
770  
1840  
2120  
670  
1380  
Reverse recovery current  
Recovered charge  
VCC = 3600 V,  
IF = 400 A,  
VGE = ±15 V,  
RG = 5.6 W  
Ls = 280 nH  
inductive load  
Qrr  
trr  
µC  
ns  
mJ  
Reverse recovery time  
Reverse recovery energy  
Erec  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Package properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.016 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.032 K/W  
2)  
7)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.012  
0.024  
K/W  
K/W  
V
Diode thermal resistance  
case to heatsink  
Partial discharge extinction  
voltage  
Ve  
5100  
f = 50 Hz, QPD £ 10pC (acc. to IEC 61287)  
Comparative tracking index  
CTI  
³ 600  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
130 x 140 x 48  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 40  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
Surface creepage distance  
da  
mm  
Term. to term: 26  
Term. to base: 64  
Term. to term: 56  
according to IEC 60664-1  
and EN 50124-1  
ds  
m
mm  
g
Mass  
1150  
7)  
Package and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 3 of 9  
5SNA 0400J650100  
Electrical configuration  
C (5)  
C (7)  
C (3)  
G (2)  
E (1)  
E (4)  
E (6)  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 4 of 9  
5SNA 0400J650100  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
VCE = 20 V  
25 °C  
125 °C  
25 °C  
125 °C  
VGE = 15V  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
17V  
15V  
13V  
17V  
15V  
13V  
11V  
11V  
9V  
9V  
Tvj = 25 °C  
Tvj = 125 °C  
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10  
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 5 of 9  
5SNA 0400J650100  
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
VCC = 3600 V  
RG = 5.6 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
VCC = 3600 V  
IC = 400 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
Eon  
Eon  
Eoff  
Eoff  
Esw [J] = 6.8 x 10-6 x IC2 + 8.5 x 10-3 x IC + 0.451  
0
5
10  
15  
20  
25  
30  
35  
40  
0
100 200 300 400 500 600 700 800 900  
IC [A]  
RG [ohm]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 3600 V  
RG = 5.6 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
VCC = 3600 V  
IC = 400 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
td(off)  
td(on)  
td(off)  
1
1
tf  
tf  
tr  
td(on)  
tr  
0.1  
0.1  
0
200  
400  
600  
800  
1000  
0
5
10  
15  
20  
25  
30  
35  
40  
IC [A]  
RG [ohm]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 6 of 9  
5SNA 0400J650100  
1000  
100  
10  
20  
15  
10  
5
VGE = 0V  
fOSC = 1 MHz  
VOSC = 50 mV  
VCC = 3600 V  
Cies  
Coes  
Cres  
1
IC = 400 A  
Tvj = 25 °C  
0
0.1  
0
1
2
3
4
5
0
5
10  
15  
20  
25  
30  
35  
Qg [µC]  
VCE [V]  
Fig. 9  
Typical capacitances  
vs collector-emitter voltage  
Fig. 10 Typical gate charge characteristics  
2.5  
2
VCC £ 4400 V, Tvj = 125 °C, VGE = ±15 V  
RGoff = 5.6 ohm, Ls 280 nH  
£
1.5  
1
0.5  
0
Chip  
Module  
0
1000  
2000 3000 4000 5000  
VCE [V]  
6000 7000  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 7 of 9  
5SNA 0400J650100  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCC = 3600 V  
RG = 5.6 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
Erec  
VCC = 3600 V  
IF = 400 A  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 280 nH  
Erec  
Qrr  
Qrr  
Irr  
Irr  
600  
400  
200  
Erec [mJ] = -2.1 x 10-3 x IC2 + 3.58 x IC + 286  
0
0
100 200 300 400 500 600 700 800 900  
IF [A]  
0
0.5  
1
1.5  
2
2.5  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
800  
700  
1000  
VCC £ 4400 V  
di/dt 2500 A/µs  
£
Tvj = 125 °C  
800  
600  
400  
200  
0
Ls 280 nH  
£
600  
125 °C  
25 °C  
500  
400  
300  
200  
100  
0
0
1
2
3
4
5
0
1000 2000 3000 4000 5000 6000 7000  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA 1592-01 Jun 07  
page 8 of 9  
5SNA 0400J650100  
0.1  
Analytical function for transient thermal  
impedance:  
Zth(j-c) Diode  
n
Z (t) = R (1-e-t/ti )  
Zth(j-c) IGBT  
0.01  
å
th (j-c)  
i
i=1  
i
1
2
3
4
5
Ri(K/kW) 12.75 2.99  
0.001  
151  
5.84  
ti(ms)  
Ri(K/kW) 25.5  
144  
6.3  
5.83  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
For detailed information refer to:  
·
·
·
5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays  
5SYA 2043-01 Load – cycle capability of HiPaks  
5SZK 9120-00 Specification of environmental class for HiPak  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA 1592-01 Jun 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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