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5SNE0800E3301

型号：

5SNE0800E3301

描述：

IGBT模块[ IGBT Module ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

279 K

下载PDF手册
VCE  
IC  
=
=
3300 V  
800 A  
ABB HiPakTM  
IGBT Module  
5SNE 0800E330100  
PRELIMINARY  
Doc. No. 5SYA1562-01 July 07  
· Low-loss, rugged SPT chip-set  
· Smooth switching SPT chip-set for  
good EMC  
· Industry standard package  
· High power density  
· AlSiC base-plate for high power  
cycling capability  
· AlN substrate for low thermal  
resistance  
1)  
Maximum rated values  
Parameter  
Symbol Conditions  
min max Unit  
Collector-emitter voltage  
DC collector current  
Peak collector current  
Gate-emitter voltage  
Total power dissipation  
DC forward current  
Peak forward current  
VCES  
IC  
3300  
800  
V
A
A
V
W
A
A
VGE = 0 V, Tvj ³ 25 °C  
Tc = 80 °C  
ICM  
VGES  
Ptot  
IF  
tp = 1 ms, Tc = 80 °C  
1600  
20  
-20  
Tc = 25 °C, per switch (IGBT)  
Either diode  
7700  
800  
IFRM  
1600  
VR = 0 V, Tvj = 125 °C,  
tp = 10 ms, half-sinewave, either diode  
Surge current  
IFSM  
tpsc  
8000  
10  
A
VCC = 2500 V, VCEM CHIP £ 3300 V  
IGBT short circuit SOA  
µs  
VGE £ 15 V, Tvj £ 125 °C  
Isolation voltage  
Visol  
Tvj  
t = 1 min, f = 50 Hz  
6000  
150  
125  
125  
125  
6
V
Junction temperature  
Junction operating temperature  
Case temperature  
°C  
°C  
°C  
°C  
Tvj(op)  
Tc  
-40  
-40  
-40  
4
Storage temperature  
Tstg  
Ms  
Base-heatsink, M6 screws  
Main terminals, M8 screws  
Auxiliary terminals, M4 screws  
2)  
Mounting torques  
Nm  
Mt1  
Mt2  
8
10  
2
3
1)  
2)  
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SNE 0800E330100  
3)  
IGBT characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Collector (-emitter)  
breakdown voltage  
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C  
3300  
V
4)  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.7  
3.5  
3.1  
3.8  
3.4  
4.3  
8
V
V
Collector-emitter  
saturation voltage  
VCE sat  
IC = 800 A, VGE = 15 V  
VCE = 3300 V, VGE = 0 V  
mA  
mA  
nA  
V
Collector cut-off current  
ICES  
80  
Gate leakage current  
IGES  
-500  
5.5  
500  
7.5  
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C  
Gate-emitter threshold voltage  
VGE(TO)  
IC = 160 mA, VCE = VGE, Tvj = 25 °C  
IC = 800 A, VCE = 1800 V,  
VGE = -15 V .. 15 V  
Gate charge  
Qge  
8.07  
µC  
Input capacitance  
Cies  
Coes  
Cres  
125  
7.71  
1.48  
525  
VCE = 25 V, VGE = 0 V, f = 1 MHz,  
Tvj = 25 °C  
nF  
Output capacitance  
Reverse transfer capacitance  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Turn-on delay time  
Rise time  
td(on)  
ns  
ns  
ns  
ns  
525  
190  
tr  
Ls = 100 nH, inductive load Tvj = 125 °C  
200  
VCC = 1800 V,  
IC = 800 A,  
RG = 2.2 W,  
VGE = ±15 V,  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
1060  
1210  
340  
Turn-off delay time  
Fall time  
td(off)  
tf  
Ls = 100 nH, inductive load Tvj = 125 °C  
460  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
1000  
1380  
880  
Turn-on switching energy  
Turn-off switching energy  
Eon  
Eoff  
mJ  
mJ  
VCC = 1800 V, IC = 800 A,  
VGE = ±15 V, RG = 2.2 W,  
Ls = 100 nH, inductive load  
1250  
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,  
Short circuit current  
ISC  
3300  
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V  
Module stray inductance  
Ls CE  
Leg 1 + 2 parallel  
15  
nH  
TC = 25 °C  
TC = 125 °C  
0.09  
0.13  
Resistance, terminal-chip  
RCC’+EE’ Leg 1 + 2 parallel  
mΩ  
3)  
Characteristic values according to IEC 60747 – 9  
Collector-emitter saturation voltage is given at chip level  
4)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 2 of 9  
5SNE 0800E330100  
5)  
Diode characteristic values  
Parameter  
Symbol Conditions  
min typ max Unit  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 25 °C  
Tvj = 125 °C  
2.0  
2.3  
2.6  
6)  
Forward voltage  
VF  
Irr  
IF = 800 A  
V
A
2.0 2.35 2.6  
710  
950  
500  
930  
850  
1550  
620  
1180  
30  
Reverse recovery current  
Recovered charge  
VCC = 1800 V,  
IF = 800 A,  
VGE = ±15 V,  
RG = 2.2 W  
Ls = 100 nH  
inductive load  
Qrr  
trr  
µC  
ns  
Reverse recovery time  
Reverse recovery energy  
Stray inductance  
Erec  
mJ  
nH  
Ls AC  
Leg 3  
TC = 25 °C  
TC = 125 °C  
0.18  
0.26  
Resistance, terminal-chip  
RAA’+CC’ Leg 3  
mΩ  
5)  
Characteristic values according to IEC 60747 – 2  
Forward voltage is given at chip level  
6)  
7)  
Thermal properties  
Parameter  
Symbol Conditions  
min typ max Unit  
IGBT thermal resistance  
junction to case  
Rth(j-c)IGBT  
0.013 K/W  
Diode thermal resistance  
junction to case  
Rth(j-c)DIODE  
0.025 K/W  
2)  
2)  
IGBT thermal resistance  
case to heatsink  
Rth(c-s)IGBT IGBT per switch, l grease = 1W/m x K  
Rth(c-s)DIODE Diode per switch, l grease = 1W/m x K  
0.012  
0.024  
K/W  
K/W  
Diode thermal resistance  
case to heatsink  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
7)  
Mechanical properties  
Parameter  
Symbol Conditions  
min typ max Unit  
L x W x H  
190 x 140 x 38  
Dimensions  
Typical , see outline drawing  
mm  
Term. to base: 23  
according to IEC 60664-1  
and EN 50124-1  
Clearance distance in air  
da  
mm  
Term. to term: 19  
Term. to base: 33  
Term. to term: 32  
according to IEC 60664-1  
and EN 50124-1  
Surface creepage distance  
Mass  
ds  
m
mm  
g
1380  
7)  
Thermal and mechanical properties according to IEC 60747 – 15  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 3 of 9  
5SNE 0800E330100  
Electrical configuration  
2)  
Outline drawing  
Note: all dimensions are shown in mm  
2)  
For detailed mounting instructions refer to ABB Document No. 5SYA2039  
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.  
This product has been designed and qualified for Industrial Level.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 4 of 9  
5SNE 0800E330100  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VCE = 20 V  
25 °C  
125 °C  
125 °C  
25 °C  
VGE = 15 V  
5 6  
0
1
2
3
4
5
6
7
8
9 10 11 12 13  
0
1
2
3
4
VCE [V]  
VGE [V]  
Fig. 1  
Typical on-state characteristics, chip level  
Fig. 2  
Typical transfer characteristics, chip level  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
17 V  
15 V  
17 V  
15 V  
13 V  
11 V  
13 V  
11 V  
9 V  
9 V  
Tvj = 125 °C  
Tvj = 25°C  
0
1
2
3
4
5
0
1
2
3
4
5
6
7
VCE [V]  
VCE [V]  
Typical output characteristics, chip level  
Typical output characteristics, chip level  
Fig. 3  
Fig. 4  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 5 of 9  
5SNE 0800E330100  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VCC = 1800 V  
VGE = ±15 V  
RG = 2.2 ohm  
Tvj = 125 °C  
Ls = 100 nH  
VCC = 1800 V  
IC = 800 A  
Eon  
Eon  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
Eoff  
Eoff  
Esw [J] = 1.03 x 10-6 x IC2 + 1.86 x 10-3 x IC + 419 x 10-3  
0
5
10  
15  
20  
25  
0
400  
800  
1200  
1600  
RG [ohm]  
IC [A]  
Fig. 5  
Typical switching energies per pulse  
vs collector current  
Fig. 6  
Typical switching energies per pulse  
vs gate resistor  
10  
10  
VCC = 1800 V  
IC = 800 A  
td(off)  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
td(off)  
tf  
td(on)  
1
tr  
1
td(on)  
tf  
0.1  
tr  
VCC = 1800 V  
RG = 2.2 ohm  
VGE = ±15 V  
Tvj = 125 °C  
Ls = 100 nH  
0.1  
0.01  
0
5
10  
15  
20  
25  
0
400  
800  
1200  
1600  
RG [ohm]  
IC [A]  
Fig. 7  
Typical switching times  
vs collector current  
Fig. 8  
Typical switching times  
vs gate resistor  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 6 of 9  
5SNE 0800E330100  
1000  
100  
10  
20  
15  
10  
5
VGE = 0V  
fOSC = 1 MHz  
VOSC = 50 mV  
Cies  
VCC = 1800 V  
VCC = 2500 V  
Coes  
Cres  
IC = 800 A  
Tvj = 25 °C  
0
1
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
35  
Qg [µC]  
VCE [V]  
Fig. 9  
Typical capacitances  
vs collector-emitter voltage  
Fig. 10 Typical gate charge characteristics  
2.5  
2
VCC 2500 V, Tvj = 125 °C  
£
VGE = ±15 V, RG = 2.2 ohm  
1.5  
1
0.5  
0
Chip  
Module  
0
500  
1000 1500 2000 2500  
VCE [V]  
3000 3500  
Fig. 11 Turn-off safe operating area (RBSOA)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 7 of 9  
5SNE 0800E330100  
1500  
1250  
1000  
750  
500  
250  
0
1200  
1000  
800  
600  
400  
200  
0
VCC = 1800 V  
VGE = ±15 V  
RG = 2.2 ohm  
Tvj = 125 °C  
Ls = 100 nH  
Erec  
Qrr  
Qrr  
Irr  
Erec  
Irr  
VCC = 1800 V  
IF = 800 A  
Tvj = 125 °C  
Ls = 100 nH  
Erec [mJ] = -600 x 10-6 x IF2 + 1.72 x IF + 190  
0
1
2
3
4
0
400  
800  
IF [A]  
1200  
1600  
di/dt [kA/µs]  
Fig. 12 Typical reverse recovery characteristics  
Fig. 13 Typical reverse recovery characteristics  
vs forward current  
vs di/dt  
1600  
1400  
2000  
VCC £ 2500 V  
di/dt 5000 A/µs  
£
Tvj = 125 °C  
1600  
1200  
800  
400  
0
25°C  
1200  
125°C  
1000  
800  
600  
400  
200  
0
0
1
2
3
4
0
500 1000 1500 2000 2500 3000 3500  
VR [V]  
VF [V]  
Fig. 14 Typical diode forward characteristics,  
Fig. 15 Safe operating area diode (SOA)  
chip level  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1562-01 July 07  
page 8 of 9  
5SNE 0800E330100  
0.1  
Analytical function for transient thermal  
impedance:  
Zth(j-c) Diode  
n
Z (t) = R (1-e-t/ti )  
0.01  
Zth(j-c) IGBT  
å
th (j-c)  
i
i=1  
i
1
2
3
4
5
Ri(K/kW) 8.78  
2.06 0.961 0.948  
0.001  
207.4 30.1  
7.55  
1.57  
ti(ms)  
Ri(K/kW) 17.3  
4.28  
1.92  
7.53  
1.92  
1.57  
203.6 30.1  
ti(ms)  
0.0001  
0.001  
0.01  
0.1  
1
10  
t [s]  
Fig. 16 Thermal impedance vs time  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1562-01 July 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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