WTC2306
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS (th)
IGSS
IDSS
-
-
V
V
30
0.7
-
VGS=0V, ID=250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=250µA
1.4
100
-
-
Gate-Source Leakage Current
nA
µA
+
VDS=0V,VGS= 12V
Zero Gate Voltage Drain Current
VDS=24V ,VGS=0V
-
1
-
Drain-Source On-Resistance
VGS=2.5V ,ID=4.0A
VGS=4.5V ,ID=5.0A
RDS(on)
-
-
-
45
34
31
mΩ
=10V , ID=5.8A
VGS
Gate Resistance
VGS=0V, VDS=0V, f=1HMz
R
g
g
7
Ω
S
6
7.5
-
Forward Transconductance
VDS=5V, ID=5A
15
fs
10
Switching
Turn-On Delay Time(2)
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
t
-
-
-
7
14
30
76
nS
nS
d(on)
Rise Time
15
38
t
r
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Turn-O Time
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
t
)
nS
nS
nc
Fall Time
-
-
3
6
t
f
VDD=15V, ID=1A, VGEN=10V, RG=3Ω, RL=2.7Ω
Total Gate Charge(2)
VDS=15V, ID=5.8A,VGS=4.5V
11
14.3
Qg
Gate-Source Charge
VDS=15V, ID=5.8A,VGS=4.5V
-
-
1.6
2.8
2.08
3.64
Qgs
nc
nc
Gate-Drain Charge
VDS=15V, ID=5.8A,VGS=4.5V
Qgd
Diode Forward Voltage(2)
VGS=0V, IS=1.0A
Drain-Source
-
-
-
-
1.2
2.5
VSD
IS
V
A
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
WEITRON
http://www.weitron.com.tw
2/4
Rev.B 17-Aug-09
