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WTC2301_10

型号:

WTC2301_10

描述:

P沟道增强型功率MOSFET[ P-Channel Enhancement Mode Power MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

567 K

WTC2301  
P-Channel Enhancement  
Mode Power MOSFET  
DRAIN CURRENT  
-2.3 AMPERES  
DRAIN  
3
P b  
Lead(Pb)-Free  
DRAIN SOURCE VOLTAGE  
-20 VOLTAGE  
1
GATE  
2
Features:  
SOURCE  
3
*Super High Dense Cell Design For Low RDS(ON)  
RDS(ON)<100m@VGS=-4.5V  
*Rugged and Reliable  
1
2
*Simple Drive Requirement  
*SOT-23 Package  
SOT-23  
Applications  
*Power Management in Notebook Computer  
*Portable Equipment  
*Battery Powered System  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
-20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
V
±8  
Continuous Drain Current 3  
-2.3  
A
A
1,2  
Pulsed Drain Current  
-8  
IDM  
Total Power Dissipation(TA=25˚C)  
(TA=75˚C)  
0.9  
0.57  
PD  
W
Maximum Junction-ambient3  
Maximum Junction-case  
Ambient Temperature  
140  
100  
150  
˚C /W  
˚C /W  
˚C  
RθJA  
RθJC  
Ta  
Tc  
150  
˚C  
Case Temperature  
Operating Junction Temperature Range  
Storage Temperature Range  
150  
˚C  
˚C  
TJ  
Tstg  
-55~+150  
Device Marking  
WTC2301 = 01  
WEITRON  
http://www.weitron.com.tw  
Rev.D 29-Mar-10  
1/6  
WTC2301  
Electrical Characteristics(TA = 25℃ Unless otherwise noted)  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
-20  
V(BR)DSS  
-
-
-
-
-
VGS=0,ID=-250μA  
V
Gate-Source Threshold Voltage  
-0.45  
-0.95  
±100  
-1  
VGS(Th)  
VDS=VGS,ID=-250  
μA  
Gate-Source L eakage Current  
VGS= ±8V  
-
-
nA  
IGSS  
Drain- Source Leakage Current(Tj=25˚C)  
IDSS  
μA  
VDS=-9.6V,VGS =0  
Drain-Source On-Resistance 2  
VGS=-4.5V,I D=-2.8A  
RDS(on)  
mΩ  
-
-
69  
83  
100  
150  
VGS=-2.5V,I D=-2.0A  
Forward Transconductance  
-
6.5  
-
S
gfs  
VDS=-5.0 V, ID=-4.0A  
Dynamic  
Input Capacitance  
-
-
-
-
-
-
882.51  
145.54  
97.26  
Ciss  
Coss  
Crss  
VGS=0V,VDS=-6V,f=1.0MHz  
Output Capacitance  
VGS=0V,VDS=-6V,f=1.0MHz  
pF  
Reverse Transfer Capacitance  
VGS=0V,VDS=-6V,f=1.0MHz  
WEITRON  
http://www.weitron.com.tw  
2/6  
Rev.D 29-Mar-10  
WTC2301  
Switching  
Turn-on Delay Time2  
-
-
-
-
-
-
-
17.28  
3.73  
-
td(on)  
V
DD=-6V,VGEN =-4.5V,I  
D
D
D
=-1A,R  
=-1A,R  
=-1A,R  
L
L
L
=6Ω ,R  
=6Ω ,R  
=6Ω ,R  
G
G
G
=6Ω  
=6Ω  
=6Ω  
Rise Time  
-
t
r
V
DD=-6V,VGEN =-4.5V,I  
ns  
Turn-off Delay Time  
36.05  
6.19  
-
td (off)  
V
DD=-6V,VGEN =-4.5V,I  
Fall Time  
-
t
f
V
DD=-6V,VGEN =-4.5V,I  
D
=-1A,R  
L
=6Ω ,R  
G
=6Ω  
Total Gate Charge 2  
DS=-6.0V,VGS=-4.5V,I  
-
Qg  
Qgs  
Qgd  
15.23  
5.49  
V
D
=-2.8A  
=-2.8A  
=-2.8A  
Gate-Source Charge  
DS=-6.0V,VGS=-4.5V,I  
nC  
-
-
V
D
D
Gate-Drain Change  
DS=-6.0V,VGS=-4.5V,I  
2.74  
V
Source-Drain Diode Characteristics  
Forward On Voltage 2  
-
-
-0.8  
-
- 1.2  
- 2.4  
VSD  
V
A
VGS =0V,IS=-0.75A,Tj=25 C  
Continuous Source Current(Body Diode)  
IS  
Note: 1. Pulse width limited by Max, junction temperature.  
2. pulse width 300μs, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.  
WEITRON  
http://www.weitron.com.tw  
3/6  
Rev.D 29-Mar-10  
WTC2301  
Typical Electrical Characteristics  
18  
20  
18  
16  
14  
12  
10  
8
Vgs=2.5V  
Vgs=2V  
Vds=5V  
16  
25°C  
25°C  
14  
12  
10  
8
6
6
Vgs=1.5V  
4
4
2
2
0
0
0
0.5  
1
1.5  
2
2.  
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
Vgs, GATE-TO-SOURCE VOLTAGE(V)  
Vds,DRAIN-TO-SOURCE VOLTAGE(V)  
Figure 1. Transfer Characteristics  
Figure 2. On–Region Characteristics  
0.5  
0.45  
0.4  
0.5  
0.45  
0.4  
0.35  
0.3  
0.35  
0.3  
Vgs=1.5V  
0.25  
0.2  
0.25  
0.2  
Id=3.5A  
Vgs=2V  
0.15  
0.1  
0.15  
0.1  
0.05  
0
0.05  
0
Vgs=2.5V  
0
2
4
6
8
0
1
2
3
4
5
6
7
8
Vgs-Gate-to-Source Voltage(V)  
Id-Drain current  
Figure 3. On–Resistance versus Drain Current  
Figure 4. On-Resistance vs. Gate-to-Source Voltage  
WEITRON  
http://www.weitron.com.tw  
4/6  
Rev.D 29-Mar-10  
WTC2301  
Typical Electrical Characteristics  
12  
10  
8
1800  
1600  
1400  
1200  
1000  
800  
Ciss  
6
600  
4
Coss  
Crss  
400  
2
200  
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
Vds  
Qgs(nC)  
Figure 5. Gate Charge  
Figure 6. Capacitance  
120  
100  
80  
60  
40  
20  
0
0
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
VGS=-4.5V ID=2A  
ID=250uA  
-50  
0
50  
Temp(oC)  
100  
150  
-50  
0
50  
100  
150  
Temp(oC)  
Figure 8. Vth Vs.Junction Temperature  
Figure 7. On-Resistance Vs.Junction Temperature  
WEITRON  
http://www.weitron.com.tw  
5/6  
Rev.D 29-Mar-10  
WTC2301  
SOT-23 Outline Dimension  
SOT-23  
A
Dim  
A
B
C
D
Min  
0.35  
1.19  
2.10  
0.85  
0.46  
1.70  
2.70  
0.01  
0.89  
0.30  
0.076  
Max  
0.51  
1.40  
3.00  
1.05  
1.00  
2.10  
3.10  
0.13  
1.10  
0.61  
0.25  
B
C
TOP VIEW  
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
WEITRON  
http://www.weitron.com.tw  
6/6  
Rev.D 29-Mar-10  
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