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WTC2303-G

型号:

WTC2303-G

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

620 K

WTC2303  
P-Channel Enhancement  
Mode Power MOSFET  
* “G” Lead(Pb)-Free  
DRAIN CURRENT  
-1.9 AMPERES  
DRAIN  
3
DRAIN SOURCE VOLTAGE  
-30 VOLTAGE  
1
GATE  
2
Features:  
SOURCE  
3
*Super High Dense Cell Design For Low RDS(ON)  
RDS(ON)<240mΩ@VGS=-10V  
*Rugged and Reliable  
1
2
*Simple Drive Requirement  
*SOT-23 Package  
SOT-23  
Applications  
*Power Management in Notebook Computer  
*Portable Equipment  
*Battery Powered System  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
-30  
VDS  
VGS  
V
±20  
-1.9  
-1.5  
-10  
Continuous Drain Current 3  
,(TA  
,(TA  
ID  
A
1,2  
Pulsed Drain Current  
IDM  
PD  
Total Power Dissipation(TA=25˚C)  
1.38  
90  
W
Maximum Thermal Resistance Junction-ambient3  
Operating Junction and Storage Temperature Range  
˚C/W  
˚C  
RθJA  
-55~+150  
TJ,Tstg  
Device Marking  
WTC2303=2303  
WEITRON  
http:www.weitron.com.tw  
16-May-05  
1/6  
WTC2303  
Electrical Characteristics(TA = 25℃ Unless otherwise noted)  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
-30  
V(BR)DSS  
VGS(Th)  
IGSS  
-
-
-
-
-
-
-
VGS=0,ID=-250μA  
V
Gate-Source Threshold Voltage  
-1.0  
VDS=VGS,ID=-250  
μA  
Gate-Source Leakage Current  
VGS= ±20V  
±100  
-1  
-
-
-
nA  
μA  
Drain- Source Leakage Current(Tj=25˚C)  
VDS=-30V,VGS =0  
IDSS  
Drain- Source Leakage Current(Tj=70˚C)  
VDS=-30V,VGS =0  
-10  
Drain-Source On-Resistance 2  
VGS=-10V,I =-1.7A  
RDS(on)  
mΩ  
S
-
-
-
-
240  
460  
D
VGS=-4.5V,I D=-1.3A  
Forward Transconductance  
VDS=-10V, ID=-1.7A  
-
2
-
gfs  
Dynamic  
Input Capacitance  
-
-
-
-
-
-
230  
130.4  
40  
Ciss  
Coss  
Crss  
VGS=0V,VDS=-15V,f=1.0MHz  
Output Capacitance  
VGS=0V,VDS=-15V,f=1.0MHz  
pF  
Reverse Transfer Capacitance  
VGS=0V,VDS=-15V,f=1.0MHz  
WEITRON  
http:www.weitron.com.tw  
2/6  
16-May-05  
WTC2303  
Switching  
Turn-on Delay Time2  
DS=-15V,VGS=-10V,I  
Rise Time  
DS=-15V,VGS=-10V,I  
Turn-off Delay Time  
DS=-15V,V GS=-10V,I  
-
-
-
-
-
-
-
7.6  
8.2  
17.5  
9
-
td(on)  
V
D
D
=-1A,R  
=-1A,R  
D
D
=15Ω ,R  
=15Ω ,R  
G
G
=6Ω  
=6Ω  
-
t
r
V
ns  
-
td (off)  
V
D
=-1A,R  
D
=15Ω ,R  
G
=6Ω  
Fall Time  
DS=-15V,VGS=-10V,I  
-
t
f
V
D
=-1A,R  
D
=15Ω ,R  
G
=6Ω  
Total Gate Charge 2  
DS=-15V,VGS=-10V,I  
10  
-
Qg  
Qgs  
Qgd  
6.2  
1.4  
V
D
=-1.7A  
=-1.7A  
=-1.7A  
Gate-Source Charge  
nC  
V
DS=-15V,VGS=-10V,I  
D
Gate-Drain Change  
-
0.3  
V
DS=-15V,VGS=-10V,I  
D
Source-Drain Diode Characteristics  
Forward On Voltage 2  
-
-
-
-
-
-
- 1.2  
- 1  
VSD  
V
A
A
VGS =0V,IS=-1.25A @Tj=25 C  
Continuous Source Current(Body Diode)  
VD=VG=0V,VS=-1.2V  
IS  
Pulsed Source Current(Body Diode)1  
- 10  
ISM  
Note: 1. Pulse width limited by Max, junction temperature.  
2. pulse width 300μs, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.  
WEITRON  
http:www.weitron.com.tw  
3/6  
16-May-05  
WTC2303  
10  
10  
8
°
°
T
A
=25 C  
T
A
=125 C  
= -10V  
= -8V  
= -6V  
= -5V  
= -10V  
= -8V  
= -6V  
= -5V  
8
6
4
2
0
6
4
2
0
VG = -4V  
VG = -4V  
0
1
2
3
4
5
0
1
2
3
4
5
-VDS ,Drain-to-source Voltage(V)  
-VDS ,DRAIN-TO-SOURCE VOLTAGE(V)  
Fig.2 Typical Output Characteristics  
FIG.1 Typical Output Characteristics  
250  
1.8  
ID = -1.3A  
TA = 25°C  
ID = -1.7A  
VG = -10V  
1.6  
1.4  
200  
1.2  
1.0  
150  
100  
0.8  
0.6  
-50  
0
50  
100  
150  
3
5
7
9
11  
-VGS ,Gate-to-source Voltage(V)  
Tj ,Junction Temperature(°C)  
Fig.3 On-Resistance v.s. Gate Voltage  
Fig.4 Normalized On-Resistance  
10.0  
1.0  
3
2
T = 150°C  
j
Tj = 25°C  
0
1
0.1  
0.1  
0
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
-50  
0
50  
100  
150  
-VDS ,Source-to-Drain Voltage(V)  
Tj ,Junction Temperature(°C)  
Fig.5 Forward Characteristics of  
Reverse Diode  
Fig.6 Gate Threshold Voltage v.s.  
Junction Temperature  
WEITRON  
http://www.weitron.com.tw  
16-May-05  
4/6  
WTC2303  
1000  
100  
10  
14  
f = 1.0MHz  
12  
10  
ID = -1.7A  
VDS = -15V  
Ciss  
8
6
4
2
0
Coss  
Crss  
0
2
4
6
8
1
5
9
13  
17  
21  
25  
29  
-VDS, Drain-to-Source Voltage(V)  
QG , Total Gate Charge(nC)  
Fig 8. Typical Capacitance Characteristics  
Fig 7. Gate Charge Characteristics  
100  
10  
1
Duty factor = 0.5  
0.2  
0.1  
0.1  
0.05  
1ms  
1
PDM  
t
0.01  
10ms  
0.01  
T
0.1  
Duty factor = t / T  
Peak Tj=PDM x Rθja + Ta  
Rθja=270°C / W  
100ms  
TA = 25°C  
Single pulse  
Single Pulse  
Is  
DC  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
-VDS , Drain-to-Source Voltage(V)  
t, Pulse Width(s)  
Fig 10. Effective Transient Thermal Impedance  
Fig 9. Maximum Safe Operation Area  
VG  
VDS  
90%  
QG  
-10V  
QGD  
QGS  
10%  
VGS  
td(on) tr  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig.12 Gate Charge Waveform  
WEITRON  
http://www.weitron.com.tw  
5/6  
16-May-05  
WTC2303  
SOT-23 Outline Dimension  
SOT-23  
A
Dim  
A
B
C
D
Min  
0.35  
1.19  
2.10  
0.85  
0.46  
1.70  
2.70  
0.01  
0.89  
0.30  
0.076  
Max  
0.51  
1.40  
3.00  
1.05  
1.00  
2.10  
3.10  
0.13  
1.10  
0.61  
0.25  
B
C
TOP VIEW  
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
WEITRON  
http://www.weitron.com.tw  
6/6  
16-May-05  
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