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WTC2312

型号:

WTC2312

描述:

N沟道增强型功率MOSFET[ N-Channel Enhancement Mode Power MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

1341 K

WTC2312  
N-Channel Enhancement  
Mode Power MOSFET  
3 DRAIN  
DRAIN CURRENT  
4.9 AMPERES  
P b  
Lead(Pb)-Free  
DRAIN SOUCE VOLTAGE  
20 VOLTAGE  
1 GATE  
Features:  
* Super High Dense Cell Design For Low RDS(ON)  
2 SOURCE  
RDS(ON)<41mΩ @VGS=4.5V  
RDS(ON)<47mΩ @VGS=2.5V  
RDS(ON)<57mΩ @VGS=1.8V  
3
1
* Capable of 2.5V gate drive  
* Rugged and Reliable  
2
* Lower On-Resistance  
SOT-23  
Application:  
* Power Management in Notebook Computer.  
* Portable Equipment.  
* Battery Powered System.  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
20  
Unit  
Drain-Source Voltage  
VDS  
VGS  
V
8
Gate-Source Voltage  
3 ,VGS@4.5V(TA=25°C)  
,VGS@4.5V(TA=70°C)  
Continuous Drain Current  
4.9  
3.4  
15  
ID  
A
Pulsed Drain Current 1, 2  
IDM  
PD  
Total Power Dissipation(TA=25°C)  
Maximum Junction-ambient 3  
0.75  
140  
W
°C/W  
°C  
RθJA  
Operating Junction Temperature Range  
Storage Temperature Range  
+150  
TJ  
Tstg  
-55~+150  
°C  
Device Marking  
WTC2312=N12  
WEITRON  
http://www.weitron.com.tw  
1/6  
Rev.B 04-Aug-09  
WTC2312  
(T =25°C Unless otherwise noted)  
Electrical Characteristics  
A
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
VGS =0, ID  
20  
0.4  
-
V(BR)DSS  
-
-
1.0  
±±11  
1
V
Gate-Source Threshold Voltage  
0.6  
VGS(Th)  
VDS =VGS , ID=250  
A
Gate-Source Leakage Current  
VGS 8V  
-
-
nA  
IGS S  
=
Drain-Source Leakage Current(Tj=25˚C)  
VDS =20V,VGS =0  
IDS S  
-
Drain-Source On-Resistance  
VGS =1.8V,ID=4.0A  
-
-
-
31  
24  
21  
57  
47  
41  
R DS(on)  
mΩ  
S
VGS =2.5V,ID=4.5A  
VGS =4.5V,ID=5.0A  
Forward Transconductance  
VDS =10V, ID=5.0A  
gfs  
-
40  
-
Dynamic  
Input Capacitance  
VGS=1V, VDS=8V, f=±.1MHz  
-
-
-
-
-
-
500  
300  
140  
Ciss  
Coss  
Crss  
Output Capacitance  
VGS=1V, VDS=8V, f=±.1MHz  
pF  
Reverse Transfer Capacitance  
VGS=1V, VDS=8V, f=±.1MHz  
WEITRON  
http://www.weitron.com.tw  
2/6  
Rev.B 04-Aug-09  
WTC2312  
Switching  
Turn-on Delay Time2  
=4.5V, V =10V,I =1.0A, R =6Ω  
-
-
-
-
-
-
-
15  
40  
48  
25  
60  
70  
45  
-
td(on)  
V
GEN  
DD  
D
G
Rise Time  
t
r
V
=4.5V, V =10V,I =1.0A, R =6Ω  
GEN DD D G  
ns  
td  
)
V
=4.5V, V =10V,I =1.0A, R =6Ω  
GEN  
DD  
D
G
Fall Time  
=4.5V, V =10V,I =1.0A, R =6Ω  
t
31  
11.2  
1.4  
f
V
GEN  
DD  
D
G
Total Gate Charge2  
=10V, V =4.5V,I =5A  
Qg  
V
DS  
GS  
D
Gate-Source Charge  
=10V, V =4.5V,I =5A  
nC  
Qgs  
Qgd  
-
V
DS  
GS  
D
Gate-Drain Change  
=10V, V =4.5V,I =5A  
2.2  
-
V
DS  
GS  
D
Source-Drain Diode Characteristics  
Forward On Voltage2  
-
-
-
1.2  
VSD  
V
A
VGS =0V, IS =1.7A  
1.7  
-
Diode Forward Current  
IS  
Note:  
1. Pulse width limited by Max, junction temperature.  
3. Surface mounted on 1 in2 copper pad of PCB board.  
WEITRON  
http://www.weitron.com.tw  
3/6  
Rev.B 04-Aug-09  
WTC2312  
12  
12  
8
TA = 150 o  
C
5.0V  
4.5V  
3.5V  
2.5V  
5.0V  
4.5V  
3.5V  
2.5V  
TA =25 o C  
8
4
4
V
G=2.5V  
=2.5V  
VG  
0
0
0
1
2
3
0
1
2
3
VDS , Drain-to-Source Voltage (V)  
VDS , Drain-to-Source Voltage (V)  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
70  
60  
50  
40  
30  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 4 A  
VG =5V  
I D =3A  
A =25 o C  
T
0
2
4
6
8
10  
-50  
0
50  
100  
150  
VGS , Gate-to-Source Voltage (V)  
Tj , Junction Temperature (  
ºC)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
4.0  
3.0  
2.0  
1.0  
0.0  
1.8  
1.4  
1.0  
0.6  
0.2  
Tj =150 o C  
Tj =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
Tj , Junction Temperature (ºC)  
VSD , Source-to-Drain Voltage (V)  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
Fig 5. Forward Characteristic of Reverse Diode  
WEITRON  
http://www.weitron.com.tw  
4/6  
Rev.B 04-Aug-09  
WTC2312  
f=1.0MHz  
12  
1000  
100  
10  
I D =4A  
10  
Ciss  
V
DS =10V  
DS =12V  
=16V  
8
6
4
2
0
V
VDS  
Coss  
Crss  
1
5
9
13  
17  
21  
25  
0
2
4
6
8
10  
VDS , Drain-to-Source Voltage (V)  
QG , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
1
t
10ms  
100ms  
1s  
0.01  
T
0.01  
0.001  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Single Pulse  
0.1  
0.01  
Rthja = 270ºC/W  
T
A =25 o  
Single Pulse  
C
DC  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
VDS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
td(on)  
td(off)tf  
tr  
Charge  
Q
Fig 11. Switching Time Circuit  
Fig 12. Gate Charge Circuit  
WEITRON  
http://www.weitron.com.tw  
Rev.B 04-Aug-09  
5/6  
WTC2312  
SOT-23 Outline Dimension  
SOT-23  
A
Dim  
A
B
C
D
Min  
0.35  
1.19  
2.10  
0.85  
0.46  
1.70  
2.70  
0.01  
0.89  
0.30  
0.076  
Max  
0.51  
1.40  
3.00  
1.05  
1.00  
2.10  
3.10  
0.13  
1.10  
0.61  
0.25  
B
C
TOP VIEW  
D
G
E
E
G
H
J
K
L
H
K
L
J
M
M
WEITRON  
http://www.weitron.com.tw  
6/6  
Rev.B 04-Aug-09  
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