WTC2305DS
Electrical Characteristics(TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
-8
V(BR)DSS
VGS(Th)
IGSS
-
-
-
-
VGS=0,ID=-250μA
V
Gate-Source Threshold Voltage
-0.45
-
-0.8
±100
VDS=VGS,ID=-250
μA
Gate-Source Leakage Current
VGS= ±8V
nA
μA
Drain- Source Leakage Current(Tj=25˚C)
IDSS
-
-
1
VDS=-6.4V,VGS =0
Drain-Source On-Resistance 2
VGS=-4.5V,ID=-3.5A
VGS=-2.5V,ID=-3.0A
VGS=-1.8V,ID=-2.0A
-
-
-
47
55
67
68
81
118
RDS(on)
mΩ
Forward Transconductance
-
8.5
-
S
gfs
VDS=-5.0V, ID=-3.5A
On-State Drain Current2
VDS=-5V,VGS =-4.5V
-
-
-
-
-6
-3
A
ID(ON)
VDS=-5V,VGS =-2.5V
Dynamic
Turn-On Delay Time
td(on)
13
25
20
40
ns
,I = -1A,V
= -4.5V,
RG = 6Ω
VDD = -4V, RL= 4Ω
D
GEN
Turn-On Rise Time
VDD = -4V, RL= 4Ω
tr
td(off)
tf
ns
ns
ns
,I = -1A,V
= -4.5V,
= -4.5V,
= -4.5V,
RG = 6Ω
RG = 6Ω
RG = 6Ω
D
GEN
Turn-Off Delay Time
55
19
80
35
,I = -1A,V
VDD = -4V, RL= 4Ω
D
GEN
Turn-Off Fall Time
VDD = -4V, RL= 4Ω
,I = -1A,V
D
GEN
Input Capacitance
VDS = -4V, VGS = 0V
Ciss
1245
pF
pF
,
f = 1.0 MHz
f = 1.0 MHz
Output Capacitance
VDS = -4V, VGS = 0V
Coss
375
210
,
Reverse Transfer Capacitance
VDS = -4V, VGS = 0V
pF
Crss
,
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
A
V
-1.6
-1.2
Diode Forward Voltage
IS = -1.6A, VGS = 0V
VSD
Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2%
2. Static parameters are based on package level with recommended wire-bonding
3. Guaranteed by design; not subject to production testing
WEITRON
http://www.weitron.com.tw
24-Aug-09
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