WTC4501
3 DRAIN
N-Channel Enhancement
Mode Power MOSFET
DRAIN CURRENT
3.2 AMPERES
P b
Lead(Pb)-Free
DRAIN SOUCE VOLTAGE
20 VOLTAGE
1
GATE
2 SOURCE
Features:
* Leading Planar Technology for Low Gate Charge / Fast Switching.
* 2.5V Rated for Low Voltage Gate Drive.
* SOT−23 Surface Mount for Small Footprint.
3
1
2
Applications:
SOT-23
* Load/Power Switch for Portables.
* Load/Power Switch for Computing.
* DC−DC Conversion.
Maximum Ratings (T =25°C Unless Otherwise Specified)
A
Rating
Symbol
Value
20
Unit
VDS
V
Drain-Source Voltage
Gate-Source Voltage
±±2
V
VGS
T =25°C
T =85°C
A
A
3.2
2.4
ID
Continuous Drain Current
Pulsed Drain Current
A
A
IDM
t =±0μS
p
±0
±.6
Continuous Source Current (Body Diode)
I S
A
PD
°C
Total Power Dissipation (TA=25
Maximum Junction-Ambient ±,2
)
±.25
W
±00
300
°C/W
°C
RθJA
TL
Lead Temperature for Soldering Purposes
(±/8” from case for ±0 s)
260°
TJ
-55~+±50
-55~+±50
°C
°C
Operating Junction Temperature Range
Storage Temperature Range
Tstg
1. Surface−mounted on FR4 board using 1 in sq pad size(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking
WTC4501 = N45
WEITRON
http://www.weitron.com.tw
06-Nov-09
1/4
