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WTC6401

型号:

WTC6401

描述:

P沟道增强型功率MOSFET[ P-Channel Enhancement Mode Power MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

1800 K

WTC6401  
P-Channel Enhancement  
Mode Power MOSFET  
DRAIN CURRENT  
-4.3 AMPERES  
DRAIN  
3
DRAIN SOURCE VOLTAGE  
-12 VOLTAGE  
1
GATE  
Features:  
*Super High Dense Cell Design For Low RDS(ON)  
RDS(ON)<50mΩ@VGS=-4.5V  
*Rugged and Reliable  
2
SOURCE  
3
1
*Simple Drive Requirement  
*Fast Switching  
2
*SOT-23 Package  
SOT-23  
Applications  
*Power Management in Notebook Computer  
*Portable Equipment  
*Battery Powered System  
Maximum Ratings(TA=25 C Unless Otherwise Specified)  
Rating  
Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-12  
± 8  
V
Continuous Drain Current 3  
,(TA=25˚C)  
,(TA=70˚C)  
-4.3  
-3.4  
ID  
A
Pulsed Drain Current 1  
-12  
1.38  
IDM  
PD  
Total Power Dissipation(TA=25 )  
˚C  
W
˚C/W  
˚C  
Maximum Thermal Resistace Junction-ambient3  
90  
RθJA  
Operating Junction and Storage Temperature Range  
- 55~+150  
TJ, Tstg  
Device Marking  
WTC6401=6401  
1/6  
06-May-05  
WEITRON  
http:www.weitron.com.tw  
WTC6401  
Electrical Characteristics(TA = 25℃ Unless otherwise noted)  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
-12  
-
-
-
-
-
-
BV DSS  
VGS(Th)  
IGSS  
VGS=0,ID=-250μA  
V
Gate-Source Threshold Voltage  
VDS=VGS,ID=-250μA  
-
-
-
-
-1.0  
±100  
-1  
Gate-Source Leakage current  
VGS= ±8V  
nA  
μA  
Drain-Source Leakage Current(Tj=25˚C)  
VDS=-16V,VGS =0  
IDSS  
Drain-Source Leakage Current(Tj=70˚C)  
VDS=-12V,VGS =0  
-25  
Drain-Source On-Resistance 2  
VGS=-4.5V,I D=-4.3A  
RDS(on)  
mΩ  
S
-
-
-
-
-
-
50  
85  
125  
VGS=-2.5V,I D=-2.5A  
VGS=-1.8V,I D=-2.0A  
Forward Transconductance  
VDS=-5.0,ID=-4.0A  
-
12  
-
gfs  
Dynamic  
Input Capacitance  
-
-
-
985  
180  
160  
1580  
Ciss  
Coss  
Crss  
VGS=0V,VDS=-15V,f=1.0MHz  
Output Capacitance  
pF  
-
-
VGS=0V,VDS=-15V,f=1.0MHz  
Reverse Transfer Capacitance  
VGS=0V,VDS=-15V,f=1.0MHz  
2/6  
06-May-05  
WEITRON  
http:www.weitron.com.tw  
WTC6401  
Switching  
Turn-on Delay Time2  
-
-
-
-
-
-
-
8
-
-
td(on)  
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω, RG=3.3Ω  
Rise Time  
11  
54  
36  
15  
1.3  
4
t
r
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω, RG=3.3Ω  
ns  
Turn-off Delay Time  
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω, RG=3.3Ω  
-
td (off)  
Fall Time  
-
t
f
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω, RG=3.3Ω  
Total Gate Charge 2  
24  
-
Qg  
Qgs  
Qgd  
VDS=-12V,VGS=-4.5V,I D=-4.0A  
Gate-Source Charge  
nC  
VDS=-12V,VGS=-4.5V,I D=-4.0A  
Gate-Source Change  
-
VDS=-12V,VGS=-4.5V,I D=-4.0A  
Source-Drain Diode Characteristics  
2
Forward On Voltage  
-
-
-
-
1.2  
V
VSD  
VGS=0V,IS=-1.2A  
2
Reverse Recovery Time  
39  
26  
-
-
ns  
nC  
T
rr  
VGS=0V,IS=-4.0A, dl/dt=100A/μs  
Reverse Recovery Charge  
Q
rr  
VGS=0V,IS=-4.0A, dl/dt=100A/μs  
Note: 1. Pulse width limited by max, junction temperature.  
2. pulse width 300μs, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.  
3/6  
06-May-05  
WEITRON  
http:www.weitron.com.tw  
WTC6401  
14  
12  
16  
-5.0V  
-4.5V  
-3.0V  
°
T =150 C  
A
-5.0V  
-4.5V  
-3.0V  
-2.5V  
°
T =25 C  
A
14  
12  
10  
8
10  
8
-2.5V  
VG=-1.8V  
VG=-1.8V  
6
4
6
4
2
0
2
0
0
2
4
6
8
0
1
2
3
4
5
6
VDS ,Drain-to-source Voltage(V)  
-VDS ,DRAIN-TO-SOURCE VOLTAGE(V)  
Fig.2 Typical Output Characteristics  
FIG.1 Typical Output Characteristics  
70  
1.6  
1.4  
1.2  
1.0  
ID = -3A  
TA = 25°C  
ID = -4A  
VG = -4.5V  
60  
50  
40  
0.8  
0.6  
-50  
0
50  
100  
150  
1
3
5
7
9
VGS ,Gate-to-source Voltage(V)  
Tj ,Junction Temperature(°C)  
Fig.3 On-Resistance v.s. Gate Voltage  
Fig.4 Normalized OnResistance  
3
2
2.0  
1.5  
1.0  
Tj = 150°C  
Tj = 25°C  
1
0
0.5  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1
-50  
0
50  
100  
150  
Tj ,Junction Temperature(°C)  
-VDS ,Source-to-Drain Voltage(V)  
Fig.6 Gate Threshold Voltage v.s.  
Junction Temperature  
Fig.5 Forward Characteristics of  
Reverse Diode  
4/6  
06-May-05  
WEITRON  
http://www.weitron.com.tw  
WTC6401  
8
10000  
f = 1.0MHz  
I D = -4A  
VDS = -16V  
6
4
1000  
Ciss  
2
Coss  
Crss  
0
10  
1
5
9
13  
17  
0
8
16  
24  
32  
VDS, Drain-to-Source Voltage(V)  
QG , Total Gate Charge(nC)  
Fig 8. Typical Capacitance Characteristics  
Fig 7. Gate Charge Characteristics  
100,000  
10,00  
1
Duty factor = 0.5  
0.2  
0.1  
0.1  
0.05  
1ms  
1,000  
PDM  
t
0.01  
10ms  
T
0.01  
Duty factor = t / T  
100ms  
0.100  
0.01  
Peak Tj=PDM x Rθ ja + Ta  
Rθ ja =270°C / W  
TA = 25°C  
Single Pulse  
Is  
DC  
Single pulse  
0.001  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
-VDS , Drain-to-Source Voltage(V)  
t, Pulse Width(s)  
Fig 10. Effective Transient Thermal Impedance  
Fig 9. Maximum Safe Operation Area  
VG  
VDS  
90%  
QG  
-4.5V  
QGD  
QGS  
10%  
VGS  
td(on) tr  
td(off) tf  
Q
Charge  
Fig.12 Gate Charge Waveform  
Fig 11. Switching Time Circuit  
5/6  
06-May-05  
WEITRON  
http://www.weitron.com.tw  
WTC6401  
SOT-23 Outline Dimension  
SOT-23  
A
Dim  
A
B
C
D
Min  
0.35  
1.19  
2.10  
0.85  
0.46  
1.70  
2.70  
0.01  
0.89  
0.30  
0.076  
Max  
0.51  
1.40  
3.00  
1.05  
1.00  
2.10  
3.10  
0.13  
1.10  
0.61  
0.25  
B
C
TOP VIEW  
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
6/6  
06-May-05  
WEITRON  
http://www.weitron.com.tw  
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