WTC2309
45
45
40
35
30
25
°
°
-10V
T
A
=25 C
T
=150 C
A
-10V
40
35
30
25
-7.0V
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
20
15
20
15
10
10
V
= -3.0V
G
V
= -3.0V
G
5
0
5
0
0
2
4
6
8
10
0
2
4
6
8
10
-VDS ,Drain-to-source Voltage(V)
-VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
FIG.1 Typical Output Characteristics
1.6
1.4
105
ID = -2.6A
TA = 25˚C
ID = 3A
VG = 10V
95
85
75
65
55
1.2
1.0
0.8
0.6
-50
0
50
100
150
1
3
5
7
9
-VGS ,Gate-to-source Voltage(V)
Tj ,Junction Temperature(°C)
Fig.3 On-Resistance v.s. Gate Voltage
Fig.4 Normalized On-Resistance
3
2
1.3
1.1
Tj = 150°C
Tj = 25°C
1
0
0.9
0.7
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
-VDS ,Source-to-Drain Voltage(V)
Tj ,Junction Temperature(°C)
Fig.5 Forward Characteristics of
Reverse Diode
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
WEITRON
http://www.weitron.com.tw
23-May-05
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