WTC8833
COLLECTOR
High-Frequency Amplifier Transistor
NPN Silicon
3
3
2
BASE
2
1
1
EMITTER
SC-59
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
11
20
Unit
Vdc
Vdc
V
CEO
V
CBO
V
Emitter-Base Voltage
Vdc
mAdc
3.0
50
EBO
I
C
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristics
Symbol
Value
Unit
Total Device Dissipation FR-5 Board(1)
TA =25 C
mW
P
200
D
1.6
625
mW/ C
C/W
C
Derate above 25 C
R
Thermal Resistance, Junction Ambient
θJA
Junction and Storage, Temperature
T
Tstg
-55 to +150
J,
Device Marking
WTC8833=R25
ELECTRICAL CHARACTERISTICS
Max
Characteristics
Symbol
Min
Unit
-
Collector-Emitter Breakdown Voltage(I =1 mAdc, I =0)
V
11
Vdc
C
B
(BR)CEO
-
-
20
Collector-Base Breakdown Voltage(I =10 uAdc, I =0)
Vdc
Vdc
V
V
C
E
(BR)CBO
Emitter-Base Breakdown Voltage(I =10 uAdc, I =0)
3.0
(BR)EBO
E
C
-
-
I
uAdc
uAdc
0.5
0.5
Collector Cufoff Current(V =10Vdc, I =0)
CBO
CB
E
I
EBO
Emitter Cufoff Current(V =2Vdc, I =0)
EB
C
1. FR-5=1.0 0.75 0.062 in
WEITRON
http://www.weitron.com.tw
