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5T9070PAI

型号：

5T9070PAI

品牌：

IDT[ INTEGRATED DEVICE TECHNOLOGY ]

页数：

9 页

PDF大小：

81 K

下载PDF手册
2.5V SINGLE DATA RATE  
1:10 CLOCK BUFFER  
IDT5T9070  
NRND  
TERABUFFER™ JR.  
NOT RECOMMENDED FOR NEW DESIGNS  
DESCRIPTION:  
FEATURES:  
TheIDT5T90702.5Vsingledatarate(SDR)clockbufferisasingle-ended  
input to ten single-ended outputs buffer built on advanced metal CMOS  
technology. TheSDRclockbufferfanoutfromasingleinputtotensingle-ended  
outputsreducestheloadingontheprecedingdriverandprovidesanefficient  
clockdistributionnetwork.  
• Optimized for 2.5V LVTTL  
• Guaranteed Low Skew < 125ps (max)  
• Very low duty cycle distortion < 300ps (max)  
• High speed propagation delay < 2ns. (max)  
• Up to 200MHz operation  
• Very low CMOS power levels  
• Hot insertable and over-voltage tolerant inputs  
• 1:10 fanout buffer  
TheIDT5T9070hastwooutputbanksthatcanbeasynchronouslyenabled/  
disabled. Multiple power and grounds reduce noise.  
• 2.5V VDD  
• Available in TSSOP package  
• NOT RECOMMENDED FOR NEW DESIGNS  
APPLICATIONS:  
• Clock and signal distribution  
FUNCTIONALBLOCKDIAGRAM  
GL  
G1  
OUTPUT  
CONTROL  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
Q8  
Q9  
Q10  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
A
OUTPUT  
CONTROL  
G2  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
OUTPUT  
CONTROL  
TheIDTlogoisaregisteredtrademarkofIntegratedDeviceTechnology,Inc.  
INDUSTRIAL TEMPERATURE RANGE  
MAY 2013  
1
© 2013 Integrated Device Technology, Inc.  
DSC-5960/20  
IDT5T9070  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
INDUSTRIALTEMPERATURERANGE  
PINCONFIGURATION  
ABSOLUTEMAXIMUMRATINGS(1)  
Symbol  
VDD  
VI  
Description  
Max  
–0.5 to +3.6  
–0.5 to +3.6  
–0.5 to VDD +0.5  
–65 to +165  
150  
Unit  
V
Power Supply Voltage  
Input Voltage  
V
GL  
VDD  
VDD  
GND  
GND  
G1  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
GND  
VDD  
VDD  
GND  
GND  
GND  
VDD  
Q3  
VO  
Output Voltage  
V
2
TSTG  
TJ  
Storage Temperature  
Junction Temperature  
°C  
°C  
3
4
NOTE:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
5
6
VDD  
Q2  
7
8
Q1  
9
Q4  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
GND  
VDD  
Q5  
GND  
VDD  
GND  
A
Q6  
CAPACITANCE(1) (TA = +25°C, F = 1.0MHz)  
VDD  
GND  
Q10  
Q9  
VDD  
GND  
Q7  
Symbol  
Parameter  
Min  
Typ.  
Max.  
Unit  
CIN  
Input Capacitance  
—
6
—
pF  
NOTE:  
Q8  
1. This parameter is measured at characterization but not tested.  
VDD  
G2  
VDD  
VDD  
GND  
GND  
VDD  
GND  
NC  
GND  
GND  
VDD  
VDD  
NC  
TSSOP  
TOP VIEW  
RECOMMENDEDOPERATINGRANGE  
Symbol  
Description  
Min.  
–40  
2.3  
Typ.  
+25  
2.5  
Max.  
+85  
2.7  
Unit  
°C  
V
TA  
AmbientOperatingTemperature  
InternalPowerSupplyVoltage  
VDD  
2
IDT5T9070  
INDUSTRIALTEMPERATURERANGE  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
PINDESCRIPTION  
Symbol  
I/O  
Type  
LVTTL  
LVTTL  
Description  
A
I
I
Clockinput  
G1  
Gate for outputs Q1 through Q5. When G1 is LOW, these outputs are enabled. When G1 is HIGH, these outputs are asynchro-  
nouslydisabledtotheleveldesignatedbyGL(1).  
G2  
I
LVTTL  
Gate for outputs Q6 through Q10. When G2 is LOW, these outputs are enabled. When G2 is HIGH, these outputs are asynchro-  
nouslydisabledtotheleveldesignatedbyGL(1).  
GL  
Qn  
I
LVTTL  
LVTTL  
PWR  
PWR  
Specifies output disable level. If HIGH, the outputs disable HIGH. If LOW, the outputs disable LOW.  
O
Clockoutputs  
VDD  
Powersupplyforthedevicecore, inputs, andoutputs  
Power supply return for power  
GND  
NOTE:  
1. Because the gate controls are asynchronous, runt pulses are possible. It is the user's responsibility to either time the gate control signals to minimize the possibility of runt  
pulses or be able to tolerate them in down stream circuitry.  
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (1)  
Symbol  
IIH  
Parameter  
Input HIGH Current  
InputLOWCurrent  
ClampDiodeVoltage  
DCInputVoltage  
Test Conditions  
Min.  
—
Typ.(4)  
—
Max  
±5  
Unit  
VDD = 2.7V  
VDD = 2.7V  
VI = VDD/GND  
VI = GND/VDD  
μA  
IIL  
—
—
±5  
VIK  
VDD = 2.3V, IIN = -18mA  
—
- 0.7  
- 1.2  
+3.6  
—
V
V
V
V
V
V
V
V
VIN  
- 0.3  
1.7  
VIH  
DC Input HIGH(2)  
DC Input LOW(3)  
VIL  
—
0.7  
—
VOH  
Output HIGH Voltage  
IOH = -12mA  
IOH = -100μA  
IOL = 12mA  
IOL = 100μA  
VDD - 0.4  
VDD - 0.1  
—
—
VOL  
OutputLOWVoltage  
0.4  
0.1  
—
NOTES:  
1. See RECOMMENDED OPERATING RANGE table.  
2. Voltage required to maintain a logic HIGH.  
3. Voltage required to maintain a logic LOW.  
4. Typical values are at VDD = 2.5V, +25°C ambient.  
3
IDT5T9070  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
INDUSTRIALTEMPERATURERANGE  
POWERSUPPLYCHARACTERISTICS  
Symbol  
Parameter  
Test Conditions(1)  
Typ.  
Max  
Unit  
IDDQ  
Quiescent VDD Power Supply Current  
VDD = Max., Reference Clock = LOW  
Outputsenabled,Alloutputsunloaded  
VDD = Max., VDD = Max., CL = 0pF  
1.5  
2
mA  
IDDD  
ITOT  
Dynamic VDD Power Supply  
CurrentperOutput  
150  
200  
μA/MHz  
Total Power VDD Supply Current  
VDD = 2.5V., FREFERENCE CLOCK = 100MHz, CL = 15pF  
VDD = 2.5V., FREFERENCE CLOCK = 200MHz, CL = 15pF  
70  
90  
mA  
100  
150  
NOTE:  
1. The termination resistors are excluded from these measurements.  
INPUT AC TEST CONDITIONS  
Symbol  
VIH  
Parameter  
Value  
Units  
Input HIGH Voltage  
VDD  
0
V
V
VIL  
InputLOWVoltage  
VTH  
InputTimingMeasurementReferenceLevel(1)  
InputSignalEdgeRate(2)  
VDD/2  
2
V
tR, tF  
V/ns  
NOTES:  
1. A nominal 1.25V timing measurement reference level is specified to allow constant, repeatable results in an automatic test equipment (ATE) environment.  
2. The input signal edge rate of 2V/ns or greater is to be maintained in the 10% to 90% range of the input waveform.  
AC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE(4)  
Symbol  
Parameter  
Min.  
Typ.  
Max  
Unit  
SkewParameters  
tSK(O)  
Same Device Output Pin-to-Pin Skew(1)  
Pulse Skew(2)  
Part-to-PartSkew(3)  
—
—
—
—
—
—
125  
300  
300  
ps  
ps  
ps  
tSK(P)  
tSK(PP)  
PropagationDelay  
tPLH  
tPHL  
tR  
Propagation Delay A to Qn  
—
—
2
ns  
Output Rise Time (20% to 80%)  
Output Fall Time (20% to 80%)  
FrequencyRange  
350  
350  
—
—
—
—
850  
850  
200  
ps  
ps  
tF  
fO  
MHz  
OutputGateEnable/DisableDelay  
tPGE  
tPGD  
OutputGateEnabletoQn  
OutputGateEnabletoQnDriventoGLDesignatedLevel  
—
—
—
—
3.5  
3
ns  
ns  
NOTES:  
1. Skew measured between all outputs under identical input and output transitions and load conditions on any one device.  
2. Skew measured is the difference between propagation delay times tPHL and tPLH of any output under identical input and output transitions and load conditions on any one device.  
3. Skew measured is the magnitude of the difference in propagation times between any outputs of two devices, given identical transitions and load conditions at identical VDD levels  
and temperature.  
4. Guaranteed by design.  
4
IDT5T9070  
INDUSTRIALTEMPERATURERANGE  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
AC TIMING WAVEFORMS  
1/fo  
tW  
tW  
VIH  
VTH  
VIL  
A
Qn  
Qm  
tPHL  
tPLH  
VOH  
VTH  
VOL  
tSK(O)  
tSK(O)  
VOH  
VTH  
VOL  
Propagation and Skew Waveforms  
NOTE: Pulse Skew is calculated using the following expression:  
tSK(P) = | tPHL - tPLH |  
where tPHL and tPLH are measured on the controlled edges of any one output from rising and falling edges of a single pulse. Please note that the tPHL and tPLH shown are not  
valid measurements for this calculation because they are not taken from the same pulse.  
VIH  
VTH  
VIL  
A
GL  
Gx  
Qn  
VIH  
VTH  
VIL  
tPLH  
VIH  
VTH  
VIL  
tPGD  
tPGE  
VOH  
VTH  
VOL  
Gate Disable/Enable Runt Pulse Generation  
NOTE:  
As shown, it is possible to generate runt pulses on gate disable and enable of the outputs. It is the user's responsibility to time their Gx signals to avoid this problem.  
5
IDT5T9070  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
INDUSTRIALTEMPERATURERANGE  
TEST CIRCUIT AND CONDITIONS  
VDD  
VDD  
VDD  
R1  
R1  
3 inch, ~50  
Transmission Line  
D.U.T.  
VIN  
Pulse  
A
Qn  
Generator  
R2  
R2  
CL  
Test Circuit for Input/Output  
INPUT/OUTPUTTESTCONDITIONS  
Symbol  
VDD = 2.5V ± 0.2V  
Unit  
VTH  
VDD / 2  
100  
V
R1  
Ω
R2  
100  
Ω
CL  
15  
pF  
6
IDT5T9070  
INDUSTRIALTEMPERATURERANGE  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
ORDERINGINFORMATION  
XX  
X
XXXXX  
IDT  
Package Process  
Device Type  
I
-40°C to +85°C (Industrial)  
PA  
PAG  
Thin Shrink Small Outline Package  
TSSOP - Green  
2.5V Single Data Rate 1:10 Clock Buffer  
Terabuffer Jr.  
5T9070  
7
IDT5T9070  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
INDUSTRIALTEMPERATURERANGE  
REVISIONHISTORY  
Rev  
Table  
Page  
Discription of Change  
Date  
A
1
NRND - Not Recommended for New Designs  
5/5/13  
8
IDT5T9070  
INDUSTRIALTEMPERATURERANGE  
2.5VSINGLEDATARATE1:10CLOCKBUFFERTERABUFFERJR.  
We’ve Got Your Timing Solution.  
6024 Silver Creek Valley Road  
San Jose, CA 95138  
Sales  
Tech Support  
netcom@idt.com  
800-345-7015 (inside USA)  
+408-284-8200 (outside USA) +480-763-2056  
Fax: 408-284-2775  
www.IDT.com/go/contactIDT  
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion.All information  
in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined  
in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express  
or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document  
is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties.  
IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users.Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or  
their respective third party owners.  
Copyright 2013. All rights reserved.  
9
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