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5SHZ08F6000

型号：

5SHZ08F6000

描述：

反向阻断集成门极换流晶闸管[ Reverse Blocking Integrated Gate-Commutated Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

8 页

PDF大小：

306 K

下载PDF手册
VDRM  
VRRM  
ITGQM  
VT0  
= 6000 V  
= 6000 V  
Reverse Blocking Integrated  
Gate-Commutated Thyristor  
=
=
=
800 A  
3.25 V  
6.4  
mΩ  
5SHZ 08F6000  
rT  
Doc. No. 5SYA1231-01 Sep. 01  
• Optimized for current source inverter (CSI)  
• Fast response (tdon < 3 µs, tdoff < 7 µs)  
• Precise timing (∆tdoff < 400 ns)  
• Direct fiber optic control  
• Status feedback  
• Cosmic radiation withstand rating  
• Very high EMI immunity  
Blocking  
VDRM  
VRRM  
IDRM  
Repetitive peak off-state voltage  
6000 V  
6000 V  
50 mA  
50 mA  
Reverse repetitive peak off-state  
voltage  
Repetitive peak off-state current  
VD = VDRM  
VR = VRRM  
≤
≤
Reverse repetitive peak off-state  
IRRM  
current  
Max. AC voltage for 100  
FIT failure rate  
0 ≤ Tjop ≤ 125 °C. Ambient cosmic  
VAC  
3600 V  
radiation at sea level in open air.  
Mechanical data (see Fig. 8)  
min.  
max.  
12 kN  
16 kN  
Fm  
Mounting force  
Dp  
H
m
DS  
Da  
l
Pole-piece diameter  
Housing thickness  
Weight IGCT  
Surface creepage distance  
Air strike distance  
Length IGCT  
47 mm  
26 mm  
1.00 kg  
33 mm  
13 mm  
250 mm  
44 mm  
208 mm  
±0.1 mm  
±0.5 mm  
≥
≥
+0/-0.5 mm  
±1.0 mm  
+0/-0.5 mm  
h
w
Height IGCT  
Width IGCT  
ABB Semiconductors AG reserves the right to change specifications without notice.  
5SHZ 08F6000  
On-state (see Fig. 2)  
ITAVM  
ITRMS  
VT  
Max. average on-state current  
290 A  
450 A  
8.40 V  
3.25 V  
Half sine wave, TC = 85 °C  
Max. RMS on-state current  
On-state voltage  
IT  
IT  
=
=
800 A  
≤
VT0  
rT  
Threshold voltage  
Slope resistance  
Tj = 125 °C  
200 - 800 A  
6.4  
mΩ  
Self commutation (VD > 0 V)  
Turn-on switching (see Fig. 3, 10, 11)  
Max. rate of rise of on-state  
di/dtcrit  
1300 A/µs  
Tj = 0…125 °C  
current  
ton (min)  
tdon  
tr  
Min. on-time  
10 µs  
3 µs  
Turn-on delay time  
Rise time  
VD  
IT  
=
=
=
=
3000 V  
800 A  
Tj  
=
125 °C  
≤
≤
≤
1.5 µs  
0.8 J  
di/dt = 500 A/µs  
Eon  
Turn-on energy per pulse  
RS  
CS  
10  
Lcomm  
LS  
=
=
6 µH  
Ω
0.1 µF  
350 nH  
Turn-off switching (see Fig. 4, 6, 10, 11)  
ITGQM  
Max. contr. turn-off current  
800 A  
Tj  
=
0…125 °C  
toff (min)  
tf  
Min. off-time  
10 µs  
4.0 µs  
7.0 µs  
7.2 J  
Fall time  
VD  
ITGQ  
RS  
=
=
=
=
3000 V  
800 A  
Tj  
VDM  
Lcomm  
LS  
=
≤
=
=
125 °C  
≤
≤
≤
tdoff  
Eoff  
Turn-off delay time  
Turn-off energy per pulse  
VDRM  
10  
6 µH  
Ω
CS  
0.1 µF  
350 nH  
Load commutation (VD < 0 V)  
Turn-off switching (see Fig. 5, 6, 10, 11)  
Max. rate of rise of on-state  
di/dtcrit  
1300 A/µs Tj = 0…125 °C  
current  
Irr  
Reverse recovery current  
Reverse recovery charge  
Turn off energy per pulse  
750 A  
1500 µC  
6.0 J  
VD  
IT  
=
=
=
=
-3000 V  
800 A  
Tj  
=
125 °C  
≤
≤
≤
Qrr  
Err  
di/dt = 500 A/µs  
RS  
CS  
10  
Lcomm  
LS  
=
=
≤
6 µH  
Ω
0.1 µF  
350 nH  
VRM  
VRRM  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 3 of 8  
5SHZ 08F6000  
Gate Unit  
Gate Unit  
Power supply (see Fig. 7 to 10)  
Without galvanic isolation to power  
circuit.  
VGDC  
Gate Unit supply voltage  
V
DC  
20 0.5  
PGin  
X1  
Gate Unit power consumption  
Gate Unit power connector  
58 W  
≤
fS = 750 Hz, ITGQ = 400 A, δ = 0.33  
Phoenix, Type MSTB 2.5/2-G-5.08 Au Note 1  
Optical control input/output (see Fig. 8 to 10)  
Pon CS Optical input power  
Poff CS Optical noise power  
Pon SF Optical output power  
Poff SF Optical noise power  
tGLITCH Pulse width threshold  
>
-20 dBm  
-45 dBm  
-15 dBm  
-50 dBm  
400 ns  
<
>
<
≤
Valid for 1mm plastic optical fibre  
(POF)  
Max. pulse width without response  
CS  
SF  
Receiver for command signal  
Transmitter for status feedback  
Agilent, Type HFBR-2528 Note 2  
Agilent, Type HFBR-1528 Note 2  
Visual feedback (see Fig. 8, 9)  
LED1 (green)  
Power supply voltage ok  
"Light" when power supply is within specified rang  
"Light" when no short circuit, no open and mouning  
LED2 (green)  
Gate-cathode interface ok  
force is applied.  
LED3 (yellow)  
LED4 (red)  
LED5 (red)  
Off gated  
Off gated  
Not ready (failure)  
"Light" when gate-current is flowing  
"Light" when GCT is off  
(optional)  
Note 1: Phoenix Contact, www.phoenixcontact.com  
Note 2: Agilent Technologies, www.semiconductor.agilent.com  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 4 of 8  
5SHZ 08F6000  
Thermal  
Tj  
0…125  
-40…60  
0…60  
Operating junction temperature range  
Storage temperature range  
°C  
°C  
°C  
Tstg  
Tamb  
Ambient operational temperature range  
Thermal resistance junction to case  
Thermal resistance case to heatsink  
23  
RthJC  
RthCH  
K/kW Double side cooled  
K/kW Double side cooled  
≤
7.5  
≤
Analytical function for transient thermal  
impedance:  
4
i
1
2
3
4
i
(1 - e -t /τi )  
ZthJC (t) = å R  
Ri (K/kW)  
τi (s)  
15.5  
0.57  
3.35  
0.087  
2.92  
1.17  
i=1  
0.013 0.0035  
ZthJC [K/kW]  
Fm = 12...16 kN  
Double side cooled  
25  
20  
15  
10  
5
0
2
3
4
5
6
2
3
4
5
6
7
2
3
4
5
6
7
8
2
3
4
5 6 7 8  
10-3  
7 8 10-2  
8 10-1  
100  
101  
t [s]  
Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values).  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 5 of 8  
5SHZ 08F6000  
E
on [J]  
IT [A]  
1.2  
1200  
Tj = 125 °C  
Tj = 125°C  
Tj = 25°C  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1000  
800  
600  
400  
200  
0
VD = 3000V  
VD = 2000V  
VD = 1000V  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
0
200  
400  
600  
800  
1000  
VT [V]  
IT [A]  
Fig. 2 On-state characteristics.  
Fig. 3 Turn-on energy per pulse  
Self commutation (VD > 0 V)  
Eoff [A]  
8.0  
Err [J]  
8.0  
Tj = 125 °C  
Tj = 125 °C  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
7.0  
VD = 3000V  
VD = 2000V  
VD = 3000V  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VD = 2000V  
VD = 1000V  
VD = 1000V  
0
200  
400  
600  
800  
1000  
ITGQ [A]  
0
200  
400  
600  
800  
1000  
IT [A]  
Fig. 4 Turn-off energy per pulse  
Self commutation (VD > 0 V).  
Fig. 5 Turn-off energy per pulse  
Load commutation (VD < 0 V).  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 6 of 8  
5SHZ 08F6000  
I
TGQ [A]  
P
Gin [W]  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
80  
δ
duty cycle = 0.33  
VD > 0 V  
70  
60  
50  
40  
30  
20  
10  
0
Tj = 0..125 °C  
≤
VDM  
VRM  
Lcomm = 3...6  
VDRM  
VRRM  
fs = 1000 Hz  
≤
µ
H
µ
Cs = 0.1  
F
fs = 750 Hz  
Ω
Rs = 5...10  
fs = 250 Hz  
0
1000  
2000  
3000  
4000  
VD [V]  
0
100  
200  
300  
400  
ITGQ [A]  
Fig. 6 Max. repetitive turn-off current.  
Fig. 7 Gate Unit power consumption.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 7 of 8  
5SHZ 08F6000  
Fig. 8 Device Outline Drawing.  
Gate Unit  
RB-GCT  
Supply (20VDC  
)
X1  
Internal Supply (without galvanic isolation to power circuit)  
Anode  
Gate  
LED1  
LED2  
LED3  
LED4  
LED5  
Turn-  
On  
Circuit  
Logic  
Monitoring  
Command Signal (Light)  
Cathode  
Rx  
CS  
SF  
Turn-  
Off  
Status Feedback (Light)  
Circuit  
Tx  
Fig. 9 Block diagram RB-IGCT.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1231-01 Sep. 01  
page 8 of 8  
5SHZ 08F6000  
Turn-on (VD > 0 V)  
Turn-off (VD > 0 V)  
di/dt  
VDM  
VD  
VD  
0.9 VD  
IT  
IT  
0.8 ITGQ  
CS  
0.3 ITGQ  
0.1 VD  
tr  
CS  
VG  
VG  
tf  
tdoff  
tdon  
Turn-off (VD < 0 V)  
di/dt  
IT  
VG  
Irr  
Qrr  
VD  
Fig. 10General current and voltage waveforms with RB-IGCT specific symbols.  
½ Lcomm  
LS  
Ld  
RS  
CS  
DUT1  
+
CDC  
LS  
RS  
CS  
DUT2  
½ Lcomm  
Fig. 11Test circuit.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1231-01 Sep. 01  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)62 888 6419  
Fax  
+41 (0)62 888 6306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  
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