请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

5SHX26L4510

型号：

5SHX26L4510

描述：

反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

13 页

PDF大小：

730 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
=
=
=
=
=
=
4500 V  
2200 A  
17×103 A  
1.8 V  
Reverse Conducting Integrated  
Gate-Commutated Thyristor  
V(T0)  
rT  
5SHX 26L4510  
0.533  
mW  
VDC-link  
2800 V  
Doc. No. 5SYA1230-03 Aug 07  
· High snubberless turn-off rating  
· Optimized for medium frequency (<1 kHz) and  
low turn-off losses  
· High reliability  
· High electromagnetic immunity  
· Simple control interface with status feedback  
· AC or DC supply voltage  
· Contact factory for series connection  
Blocking  
Maximum rated values Note 1  
Conditions  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Symbol  
Repetitive peak off-state  
voltage  
VDRM  
Gate Unit energized  
4500  
V
Permanent DC voltage for VDC-link  
100 FIT failure rate of  
RC-GCT  
Ambient cosmic radiation at sea level  
in open air. Gate Unit energized  
2800  
V
Characteristic values  
Conditions  
max  
Unit  
Parameter  
Symbol  
Repetitive peak off-state  
current  
IDRM  
VD = VDRM, Gate Unit energized  
50  
mA  
Mechanical data (see Fig. 20, 21)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Mounting force  
Characteristic values  
Parameter  
Fm  
42  
44  
46  
kN  
Conditions  
min  
typ  
max  
Unit  
mm  
mm  
kg  
Symbol  
Pole-piece diameter  
Dp  
± 0.1 mm  
85  
Housing thickness  
Weight  
H
25.3  
25.8  
2.9  
m
Surface creepage distance Ds  
Anode to Gate  
Anode to Gate  
± 1.0 mm  
33  
10  
mm  
mm  
mm  
mm  
mm  
Air strike distance  
Length  
Da  
l
439  
40  
Height  
h
± 1.0 mm  
Width IGCT  
w
± 1.0 mm  
173  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SHX 26L4510  
GCT Data  
On-state (see Fig. 3 to 6, 23)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
IT(AV)M  
Max. average on-state  
current  
Half sine wave, TC = 85 °C,  
Double side cooled  
1010  
A
Max. RMS on-state current IT(RMS)  
1590  
17×103  
A
A
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 10 ms, Tj = 125 °C, sine wave  
after surge: VD = VR = 0 V  
Limiting load integral  
I2t  
1.45×106 A2s  
25×103  
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 3 ms, Tj = 125 °C, sine wave  
after surge: VD = VR = 0 V  
A
Limiting load integral  
I2t  
938×103 A2s  
Critical rate of rise of on-  
state current  
diT/dtcr For higher diT/dt and current lower  
than 100 A an external retrigger  
pulse is required.  
100  
A/µs  
Characteristic values  
Parameter  
Conditions  
min  
typ  
max  
2.95  
1.8  
Unit  
V
Symbol  
On-state voltage  
VT  
IT = 2200 A, Tj = 125 °C  
2.3  
2.6  
Threshold voltage  
Slope resistance  
V(T0)  
rT  
Tj = 125 °C  
IT = 400...3000 A  
V
0.533  
mW  
Turn-on switching (see Fig. 23, 25)  
Maximum rated values Note 1  
Conditions  
Symbol  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Critical rate of rise of on-  
state current  
Characteristic values  
Parameter  
diT/dtcr f = 0..500 Hz, Tj = 125 °C,  
IT = 2200 A, VD = 2800 V  
650  
A/µs  
Conditions  
max  
3.5  
7
Unit  
µs  
Symbol  
Turn-on delay time  
tdon  
VD = 2800 V, Tj = 125 °C  
IT = 2200 A, di/dt = VD / Li  
Li = 5 µH  
Turn-on delay time status  
feedback  
tdon SF  
µs  
CCL = 10 µF, LCL = 0.3 µH  
Rise time  
tr  
1
µs  
J
Turn-on energy per pulse  
Eon  
0.85  
Turn-off switching (see Fig. 7, 8, 23, 25)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Max. controllable turn-off  
current  
ITGQM  
2200  
A
V
DM £ VDRM, Tj = 125 °C,  
VD = 2800 V, RS = 0.65 W,  
CCL = 10 µF, LCL £ 0.3 µH  
Max. controllable turn-off  
current  
ITGQM  
1100  
A
V
DM £ VDRM, Tj = 125 °C,  
VD = 3200 V, RS = 0.65 W,  
CCL = 10 µF, LCL £ 0.3 µH  
Characteristic values  
Parameter  
Conditions  
VD = 2800 V, Tj = 125 °C  
min  
typ  
max  
Unit  
µs  
Symbol  
Turn-off delay time  
tdoff  
7
7
VDM £ VDRM, RS = 0.65 W  
Turn-off delay time status  
feedback  
tdoff SF  
µs  
ITGQ = 2200 A, Li = 5 µH  
CCL = 10 µF, LCL = 0.3 µH,  
Turn-off energy per pulse  
Eoff  
7.8  
12  
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 2 of 13  
5SHX 26L4510  
Diode Data  
On-state (see Fig. 9 to 12, 24, 25)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
390  
Unit  
Parameter  
Symbol  
Max. average on-state  
current  
IF(AV)M  
Half sine wave, TC = 85 °C  
A
Max. RMS on-state current IF(RMS)  
620  
10.6×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tvj = 125°C, VR = 0 V  
tp = 3 ms, Tvj = 125°C, VR = 0 V  
Limiting load integral  
I2t  
561.8×103 A2s  
14.3×103  
Max. peak non-repetitive  
surge current  
IFSM  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
306.7×103 A2s  
Conditions  
min  
typ  
max  
5.4  
Unit  
V
Symbol  
On-state voltage  
VF  
IF = 2200 A, Tvj = 125°C  
3.54  
4.25  
Threshold voltage  
Slope resistance  
V(F0)  
rF  
Tvj = 125°C  
IF = 400...3000 A  
2.7  
V
1.24  
mW  
Turn-on (see Fig. 24, 25)  
Characteristic values  
Conditions  
min  
min  
min  
typ  
typ  
typ  
max  
80  
Unit  
V
Parameter  
Symbol  
Peak forward recovery  
voltage  
VFRM  
dIF/dt = 650 A/µs, Tvj = 125°C  
dIF/dt = 3000 A/µs, Tvj = 125°C  
250  
V
Turn-off (see Fig. 13 to 17, 24, 25)  
Maximum rated values Note 1  
Conditions  
Symbol  
max  
Unit  
Parameter  
Max. decay rate of on-state di/dtcrit  
current  
IFM = 2200 A, Tvj = 125 °C  
VDClink = 2800 V  
650  
A/ms  
Max. decay rate of on-state di/dtcrit  
current  
Characteristic values  
IFM = 3200 A, Tvj = 125 °C  
VDClink = 2800 V  
650  
A/ms  
Conditions  
max  
900  
2800  
4
Unit  
A
Parameter  
Symbol  
IFM = 2200 A, VDC-Link = 2800 V  
-dIF/dt = 650 A/µs, LCL = 300 nH  
CCL = 10 µF, RS = 0.8 W,  
Reverse recovery current  
IRM  
Reverse recovery charge  
Turn-off energy  
Qrr  
Err  
µC  
J
2.7  
Tvj = 125°C, DCL = 5SDF 10H4520  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 3 of 13  
5SHX 26L4510  
Gate Unit Data  
Power supply (see Fig. 18, 19)  
Maximum rated values Note 1  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Gate Unit voltage  
(Connector X1)  
VGIN,RMS AC square wave amplitude (15 kHz  
- 100kHz) or DC voltage. No  
28  
40  
V
galvanic isolation to power circuit.  
Min. current needed to power IGIN Min Rectified average current  
2.1  
A
up the Gate Unit  
see application note 5SYA 2031  
Gate Unit power consumption PGIN Max  
100  
W
Characteristic values  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Internal current limitation  
IGIN Max Rectified average current limited by  
the Gate Unit  
8
A
Optical control input/output 2) (see Fig. 23)  
Maximum rated values Note 1  
Conditions  
min  
40  
typ  
typ  
max  
Unit  
µs  
Parameter  
Symbol  
Min. on-time  
ton  
Min. off-time  
Characteristic values  
Parameter  
toff  
40  
µs  
Conditions  
min  
max  
-1  
Unit  
dBm  
dBm  
dBm  
dBm  
ns  
Symbol  
Optical input power  
Pon CS  
-15  
CS: Command signal  
Poff CS SF: Status feedback  
Optical noise power  
-45  
-1  
Valid for 1mm plastic optical fiber  
Optical output power  
Optical noise power  
Pon SF  
Poff SF  
-19  
(POF)  
-50  
400  
1100  
Pulse width threshold  
tGLITCH Max. pulse width without response  
External retrigger pulse width  
tretrig  
600  
ns  
2) Do not disconnect or connect fiber optic cables while light is on.  
Connectors 2) (see Fig. 20 to 22)  
Description  
Parameter  
Symbol  
Gate Unit power connector  
X1  
AMP: MTA-156, Part Number 641210-5 3)  
Avago, Type HFBR-2528 4)  
Avago, Type HFBR-1528 4)  
LWL receiver for command signal  
CS  
SF  
LWL transmitter for status feedback  
2) Do not disconnect or connect fiber optic cables while light is on.  
3) AMP, www.amp.com  
4) Avago Technologies, www.avagotech.com  
Visual feedback (see Fig. 22)  
Description  
Symbol  
Color  
Parameter  
Gate OFF  
LED1 "Light" when GCT is off  
(green)  
(yellow)  
(red)  
Gate ON  
LED2 "Light" when gate-current is flowing  
LED3 "Light" when not ready / Failure  
LED4 "Light" when power supply is within specified range  
Fault  
Power supply voltage OK  
(green)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 4 of 13  
5SHX 26L4510  
Thermal  
Maximum rated values Note 1  
Conditions  
min  
0
typ  
typ  
max  
Unit  
°C  
Parameter  
Symbol  
Junction operating temperature  
Tvj  
125  
60  
Storage temperature range  
Tstg  
Ta  
-40  
0
°C  
Ambient operational temperature  
Characteristic values  
50  
°C  
Conditions  
min  
max  
12.6  
4.2  
Unit  
K/kW  
K/kW  
Parameter  
Symbol  
Thermal resistance junction-to-case  
of GCT  
Rth(jc)  
Double side cooled  
No heat flow between GCT  
and Diode part  
Thermal resistance case-to-  
heatsink of GCT  
Rth(ch)  
Rth(jc)  
Rth(ch)  
Thermal resistance junction-to-case  
of Diode  
Double side cooled  
26  
K/kW  
K/kW  
No heat flow between GCT  
and Diode part  
Thermal resistance case-to-  
heatsink of Diode  
10.4  
Analytical function for transient thermal  
impedance:  
n
Z
thJC (t) =  
R
(1 - e-t/t i )  
i
å
i=1  
GCT  
i
1
2
3
4
Ri(K/kW)  
8.769  
0.5407  
1.909  
1.218  
0.0091  
0.699  
0.0025  
0.0792  
ti(s)  
Diode  
i
1
2
3
4
Ri(K/kW)  
ti(s)  
17.057  
0.5460  
5.007  
0.0829  
2.498  
0.0089  
1.439  
0.0023  
Fig. 1 Transient thermal impedance (junction-to-  
case) vs. time (max. values)  
Max. Turn-off current for Lifetime operation  
·
·
·
calculated lifetime of on-board capacitors  
20 years  
with slightly forced air cooling (air velocity  
> 0.5 m/s)  
strong air cooling allows for increased  
ambient temperature  
Fig. 2 Max. turn-off current vs. frequency for lifetime  
operation  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 5 of 13  
5SHX 26L4510  
GCT Part  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT125  
VT25  
= A +B ×IT +C ×ln(IT +1)+D × IT  
= A +B ×IT +C ×ln(IT +1)+D × IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for iT = 300 – 15000 A  
Valid for iT = 300 – 15000 A  
B25 C25  
-79.1×10-3 272.3×10-6 296.9×10-3  
A25  
D25  
A125  
B125  
C125  
312.7×10-3  
D125  
0.0  
-342.7×10-3 414.9×10-6  
0.0  
Fig. 3 GCT on-state voltage characteristics  
Fig. 4 GCT on-state voltage characteristics  
Fig. 5 GCT surge on-state current vs. pulse length,  
Fig. 6 GCT surge on-state current vs. number of  
half-sine wave  
pulses, half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 6 of 13  
5SHX 26L4510  
Fig. 7 GCT turn-off energy per pulse vs. turn-off  
Fig. 8 GCT Safe Operating Area  
current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 7 of 13  
5SHX 26L4510  
Diode Part  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VF125  
VF25  
= A +B ×IT +C ×ln(IT +1)+D × IT  
= A +B ×IT +C ×ln(IT +1)+D × IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for IT = 300 – 15000 A  
Valid for IF = 300 – 15000 A  
B25 C25  
-463.7×10-3 867.9×10-6 495.5×10-3  
A25  
D25  
A125  
B125  
C125  
555.4×10-3  
D125  
0.0  
-1.2  
1.0×10-3  
0.0  
Fig. 9 Diode on-state voltage characteristics  
Fig. 10 Diode on-state voltage characteristics  
Fig. 11 Diode surge on-state current vs. pulse length,  
Fig. 12 Diode surge on-state current vs. number of  
half-sine wave  
pulses, half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 8 of 13  
5SHX 26L4510  
Fig. 13 Upper scatter range of diode turn-off energy  
Fig. 14 Upper scatter range of diode turn-off energy  
per pulse vs. turn-off current  
per pulse vs decay rate of on-state current  
Fig. 15 Upper scatter range of diode reverse recovery  
Fig. 16 Upper scatter range of diode reverse recovery  
charge vs decay rate of on-state current  
current vs decay rate of on-state current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 9 of 13  
5SHX 26L4510  
Fig. 17 Diode Safe Operating Area  
Fig. 18 Max. Gate Unit input power in chopper mode  
Fig. 19 Burst capability of Gate Unit  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 10 of 13  
5SHX 26L4510  
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise  
1) VGIN (AC or DC+)  
2) VGIN (AC or DC+)  
3) Cathode  
4) VGIN (AC or DC-)  
5) VGIN (AC or DC-)  
Fig. 21 Detail A: pin out of supply connector X1.  
RC-IGCT  
Gate Unit  
RC-GCT  
Anode  
Supply (VGIN  
)
X1  
Internal Supply (No galvanic isolation to power circuit)  
LED1  
Gate  
LED2  
LED3  
LED4  
Turn-  
On  
Circuit  
Logic  
Command Signal (Light)  
Status Feedback (Light)  
Cathode  
Rx  
CS  
SF  
Monitoring  
Turn-  
Off  
Circuit  
Tx  
Fig. 22 Block diagram  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 11 of 13  
5SHX 26L4510  
Turn-on  
External  
Turn-off  
Retrigger pulse  
dIT/dt  
VDM  
ITM  
VDSP  
VD  
VD  
IT  
0.9 VD  
IT  
0.4 ITGQ  
0.1 VD  
VD  
CS  
SF  
CS  
SF  
CS  
SF  
tretrig  
tdoff SF  
tdoff  
tdon SF  
tdon  
tr  
ton  
toff  
Fig. 23 General current and voltage waveforms with IGCT-specific symbols  
VF(t), IF (t)  
dIF/dt  
IF (t)  
-dIF/dt  
IF (t)  
VFR  
Qrr  
VF (t)  
VF (t)  
t
tfr  
tfr (typ) 10 µs  
VR (t)  
IRM  
Fig. 24 General current and voltage waveforms with Diode-specific symbols  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1230-03 Aug 07  
page 12 of 13  
5SHX 26L4510  
Li  
LCL  
DUT  
GCT - part  
DCL  
Rs  
CCL  
VDC  
DUT  
Diode - part  
LLoad  
Fig. 25 Test circuit  
Related documents:  
5SYA 2031  
5SYA 2032  
5SYA 2036  
5SYA 2046  
5SYA 2048  
5SYA 2051  
5SZK 9107  
Applying IGCT Gate Units  
Applying IGCTs  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Failure rates of IGCTs due to cosmic rays  
Field measurements on High Power Press Pack Semiconductors  
Voltage ratings of high power semiconductors  
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory  
Please refer to http://www.abb.com/semiconductors for current version of documents.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1230-03 Aug 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
厂商 型号 描述 页数 下载

ABB

 		5SHX03D6004 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 9 页

ABB

 		5SHX04D4502 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 9 页

ABB

 		5SHX06F6010 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 13 页

ABB

 		5SHX08F4510 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 13 页

ABB

 		5SHX10H6010 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 13 页

ABB

 		5SHX14H4510 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 13 页

ABB

 		5SHX19L6010 反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ] 13 页

ABB

 		5SHY35L4510 不对称的集成网关换流晶闸管[ Asymmetric Integrated Gate- Commutated Thyristor ] 9 页

ABB

 		5SHY35L4511 不对称的集成网关换流晶闸管[ Asymmetric Integrated Gate- Commutated Thyristor ] 9 页

ABB

 		5SHY35L4512 不对称的集成网关换流晶闸管[ Asymmetric Integrated Gate- Commutated Thyristor ] 9 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.204128s