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5SHX10H6010

型号：

5SHX10H6010

描述：

反向开展集成门极换流晶闸管[ Reverse Conducting Integrated Gate-Commutated Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

13 页

PDF大小：

279 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
=
=
=
=
=
=
5500 V  
900 A  
Reverse Conducting Integrated  
Gate-Commutated Thyristor  
7.5×103 A  
V(T0)  
rT  
1.65 V  
5SHX 10H6010  
2
mW  
PRELIMINARY  
VDC-link  
3300 V  
Doc. No. 5SYA1226-05 Aug 07  
· High snubberless turn-off rating  
· Optimized for medium frequency (<1 kHz) and  
low turn-off losses  
· High reliability  
· High electromagnetic immunity  
· Simple control interface with status feedback  
· AC or DC supply voltage  
· Suitable for series connection (contact factory)  
Blocking  
Maximum rated values Note 1  
Conditions  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Symbol  
Repetitive peak off-state  
voltage  
VDRM  
Gate Unit energized  
5500  
V
Permanent DC voltage for VDC-link  
100 FIT failure rate of  
RC-GCT  
Ambient cosmic radiation at sea level  
in open air. Gate Unit energized  
3300  
V
Characteristic values  
Conditions  
max  
Unit  
Parameter  
Symbol  
Repetitive peak off-state  
current  
IDRM  
VD = VDRM, Gate Unit energized  
20  
mA  
Mechanical data (see Fig. 20, 21)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Mounting force  
Characteristic values  
Parameter  
Fm  
18  
20  
22  
kN  
Conditions  
min  
typ  
max  
Unit  
mm  
mm  
kg  
Symbol  
Pole-piece diameter  
Dp  
± 0.1 mm  
63  
Housing thickness  
Weight  
H
26.0  
26.5  
1.7  
m
Surface creepage distance Ds  
Anode to Gate  
Anode to Gate  
± 1.0 mm  
33  
13  
mm  
mm  
mm  
mm  
mm  
Air strike distance  
Length  
Da  
l
296  
48  
Height  
h
± 1.0 mm  
Width IGCT  
w
± 1.0 mm  
208  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SHX 10H6010  
GCT Data  
On-state (see Fig. 3 to 6, 23)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
IT(AV)M  
Max. average on-state  
current  
Half sine wave, TC = 85 °C,  
Double side cooled  
350  
A
Max. RMS on-state current IT(RMS)  
560  
7.5×103  
A
A
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 10 ms, Tj = 115 °C, sine wave  
after surge: VD = VR = 0 V  
Limiting load integral  
I2t  
281×103 A2s  
15×103  
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 1 ms, Tj = 115 °C, sine wave  
after surge: VD = VR = 0 V  
A
Limiting load integral  
I2t  
112×103 A2s  
Critical rate of rise of on-  
state current  
diT/dtcr For higher diT/dt and current lower  
than 50 A an external retrigger pulse  
is required.  
TBD  
A/µs  
Characteristic values  
Parameter  
Conditions  
min  
typ  
max  
3.45  
1.65  
2
Unit  
V
Symbol  
On-state voltage  
VT  
IT = 900 A, Tj = 115 °C  
Threshold voltage  
Slope resistance  
V(T0)  
rT  
Tj = 115 °C  
IT = 200...2000 A  
V
mW  
Turn-on switching (see Fig. 23, 25)  
Maximum rated values Note 1  
Conditions  
Symbol  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Critical rate of rise of on-  
state current  
Characteristic values  
Parameter  
diT/dtcr f = 500 Hz, Tj = 115 °C,  
IT = 900 A, VD = 3300 V  
285  
A/µs  
Conditions  
max  
Unit  
µs  
Symbol  
Turn-on delay time  
tdon  
VD = 3300 V, Tj = 115 °C  
IT = 900 A, di/dt = VD / Li  
Li = 11.5 µH  
3
7
Turn-on delay time status  
feedback  
tdon SF  
µs  
CCL = 2 µF, LCL = 0.6 µH  
Rise time  
tr  
1
µs  
J
Turn-on energy per pulse  
Eon  
0.5  
Turn-off switching (see Fig. 7, 8, 23, 25)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Max. controllable turn-off  
current  
ITGQM  
900  
A
V
DM £ VDRM, Tj = 115 °C,  
VD = 3300 V, RS = 1.25 W,  
CCL = 2 µF, LCL £ 0.6 µH  
Max. controllable turn-off  
current  
ITGQM  
460  
A
V
DM £ VDRM, Tj = 115 °C,  
VD = 3900 V, RS = 1.25 W,  
CCL = 2 µF, LCL £ 0.6 µH  
Characteristic values  
Parameter  
Conditions  
VD = 3300 V, Tj = 115 °C  
min  
typ  
max  
Unit  
µs  
Symbol  
Turn-off delay time  
tdoff  
6
7
VDM £ VDRM, RS = 1.25 W  
Turn-off delay time status  
feedback  
tdoff SF  
µs  
ITGQ = 900 A, Li = 11.5 µH  
CCL = 2 µF, LCL = 0.6 µH,  
Turn-off energy per pulse  
Eoff  
4.8  
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 2 of 13  
5SHX 10H6010  
Diode Data  
On-state (see Fig. 9 to 12, 24, 25)  
Maximum rated values Note 1  
Conditions  
min  
typ  
max  
170  
Unit  
Parameter  
Symbol  
Max. average on-state  
current  
IF(AV)M  
Half sine wave, TC = 85 °C  
A
Max. RMS on-state current IF(RMS)  
260  
7.6×103  
A
A
Max. peak non-repetitive  
surge current  
IFSM  
tp = 10 ms, Tvj = 115°C, VR = 0 V  
tp = 1 ms, Tvj = 115°C, VR = 0 V  
Limiting load integral  
I2t  
288.8×103 A2s  
17.5×103  
Max. peak non-repetitive  
surge current  
IFSM  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
153×103 A2s  
Conditions  
min  
min  
typ  
typ  
max  
6.4  
Unit  
V
Symbol  
On-state voltage  
VF  
IF = 900 A, Tvj = 115°C  
Threshold voltage  
Slope resistance  
V(F0)  
rF  
Tvj = 115°C  
IF = 200...2000 A  
2.53  
4.3  
V
mW  
Turn-on (see Fig. 24, 25)  
Characteristic values  
Conditions  
max  
80  
Unit  
V
Parameter  
Symbol  
Peak forward recovery  
voltage  
VFRM  
dIF/dt = 350 A/µs, Tvj = 115°C  
dIF/dt = 1600 A/µs, Tvj = 115°C  
250  
V
Turn-off (see Fig. 13 to 17, 24, 25)  
Maximum rated values Note 1  
Conditions  
Symbol  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Max. decay rate of on-state di/dtcrit  
current  
IFM = 900 A, Tvj = 115 °C  
VDClink = 3900 V  
285  
A/ms  
Characteristic values  
Conditions  
max  
430  
TBD  
2.6  
Unit  
A
Parameter  
Symbol  
IFM = 900 A, VDC-Link = 3300 V  
-dIF/dt = 285 A/µs, LCL = 0.6 µH  
CCL = 2 µF, RS = 1.25 W,  
Reverse recovery current  
IRM  
Reverse recovery charge  
Turn-off energy  
Qrr  
Err  
µC  
J
Tvj = 115°C, DCL = 5SDF 02D6004  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 3 of 13  
5SHX 10H6010  
Gate Unit Data  
Power supply (see Fig. 18, 19)  
Maximum rated values Note 1  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Gate Unit voltage  
(Connector X1)  
VGIN,RMS AC square wave amplitude (15 kHz  
- 100kHz) or DC voltage. No  
28  
40  
V
galvanic isolation to power circuit.  
Min. current needed to power IGIN Min Rectified average current  
1.1  
A
up the Gate Unit  
see application note 5SYA 2031  
Gate Unit power consumption PGIN Max  
80  
W
Characteristic values  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Internal current limitation  
IGIN Max Rectified average current limited by  
the Gate Unit  
7
A
Optical control input/output 2) (see Fig. 23)  
Maximum rated values Note 1  
Conditions  
min  
40  
typ  
typ  
max  
Unit  
µs  
Parameter  
Symbol  
Min. on-time  
ton  
Min. off-time  
Characteristic values  
Parameter  
toff  
40  
µs  
Conditions  
min  
max  
-1  
Unit  
dBm  
dBm  
dBm  
dBm  
ns  
Symbol  
Optical input power  
Pon CS  
-15  
CS: Command signal  
Poff CS SF: Status feedback  
Optical noise power  
-45  
-1  
Valid for 1mm plastic optical fiber  
Optical output power  
Optical noise power  
Pon SF  
Poff SF  
-19  
(POF)  
-50  
400  
1100  
Pulse width threshold  
tGLITCH Max. pulse width without response  
External retrigger pulse width  
tretrig  
600  
ns  
2) Do not disconnect or connect fiber optic cables while light is on.  
Connectors 2) (see Fig. 20 to 22)  
Description  
Parameter  
Symbol  
Gate Unit power connector  
X1  
AMP: MTA-156, Part Number 641210-5 3)  
Avago, Type HFBR-2528 4)  
Avago, Type HFBR-1528 4)  
LWL receiver for command signal  
CS  
SF  
LWL transmitter for status feedback  
2) Do not disconnect or connect fiber optic cables while light is on.  
3) AMP, www.amp.com  
4) Avago Technologies, www.avagotech.com  
Visual feedback (see Fig. 22)  
Description  
Symbol  
Color  
Parameter  
Gate OFF  
LED1 "Light" when GCT is off  
(green)  
(yellow)  
(red)  
Gate ON  
LED2 "Light" when gate-current is flowing  
LED3 "Light" when not ready / Failure  
LED4 "Light" when power supply is within specified range  
Fault  
Power supply voltage OK  
(green)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 4 of 13  
5SHX 10H6010  
Thermal  
Maximum rated values Note 1  
Conditions  
Conditions  
min  
0
typ  
typ  
max  
Unit  
°C  
Parameter  
Symbol  
Junction operating temperature  
Tvj  
115  
60  
Storage temperature range  
Tstg  
Ta  
-40  
0
°C  
Ambient operational temperature  
Characteristic values  
60  
°C  
min  
max  
25  
Unit  
K/kW  
K/kW  
Parameter  
Symbol  
Thermal resistance junction-to-case  
of GCT  
Rth(jc)  
Double side cooled  
Diode not dissipating  
Thermal resistance case-to-  
heatsink of GCT  
Rth(ch)  
Rth(jc)  
Rth(ch)  
8
Thermal resistance junction-to-case  
of Diode  
42  
8
K/kW  
K/kW  
Double side cooled  
GCT not dissipating  
Thermal resistance case-to-  
heatsink of Diode  
Analytical function for transient thermal  
impedance:  
n
Z
thJC (t) =  
R
(1 - e-t/t i )  
i
å
i=1  
GCT  
i
1
2
3
4
Ri(K/kW)  
15.295  
0.4820  
5.736  
2.684  
0.0076  
1.289  
0.0023  
0.0758  
ti(s)  
Diode  
i
1
2
3
4
Ri(K/kW)  
ti(s)  
25.199  
0.4963  
9.964  
0.0802  
4.491  
0.0076  
2.347  
0.0023  
Fig. 1 Transient thermal impedance (junction-to-  
case) vs. time (max. values)  
Max. Turn-off current for Lifetime operation  
·
·
·
calculated lifetime of on-board capacitors  
20 years  
with slightly forced air cooling (air velocity  
> 0.5 m/s)  
strong air cooling allows for increased  
ambient temperature  
Fig. 2 Max. turn-off current vs. frequency for lifetime  
operation  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 5 of 13  
5SHX 10H6010  
GCT Part  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT115  
VT25  
= A +B ×IT +C ×ln(IT +1)+D × IT  
= A +B ×IT +C ×ln(IT +1)+D × IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for iT = TBD – TBD A  
Valid for iT = TBD – TBD A  
A25  
B25  
C25  
D25  
A115  
B115  
C115  
D115  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IT [A]  
1000  
800  
600  
400  
200  
0
Tj = 115°C  
2.00 2.25 2.50 2.75 3.00 3.25 3.50 3.75 4.00  
VT [V]  
Fig. 3 GCT on-state voltage characteristics  
Fig. 4 GCT on-state voltage characteristics  
TBD  
TBD  
Fig. 5 GCT surge on-state current vs. pulse length,  
Fig. 6 GCT surge on-state current vs. number of  
half-sine wave  
pulses, half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 6 of 13  
5SHX 10H6010  
Eoff [J]  
5.0  
Tj = 115°C  
VD = 3300 V  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
100 200 300 400 500 600 700 800 900 1000  
ITGQ [A]  
Fig. 7 GCT turn-off energy per pulse vs. turn-off  
Fig. 8 GCT Safe Operating Area  
current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 7 of 13  
5SHX 10H6010  
Diode Part  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VF115  
VF25  
= A +B ×IT +C ×ln(IT +1)+D × IT  
= A +B ×IT +C ×ln(IT +1)+D × IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for IT = TBD – TBD A  
Valid for IF = TBD – TBD A  
A25  
B25  
C25  
D25  
A115  
B115  
C115  
D115  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IF [A]  
1000  
Tj = 115°C  
800  
600  
400  
200  
0
3.0  
4.0  
5.0  
6.0  
7.0  
VF [V]  
Fig. 9 Diode on-state voltage characteristics  
Fig. 10 Diode on-state voltage characteristics  
TBD  
TBD  
Fig. 11 Diode surge on-state current vs. pulse length,  
Fig. 12 Diode surge on-state current vs. number of  
half-sine wave  
pulses, half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 8 of 13  
5SHX 10H6010  
Err [J]  
3.0  
Tj = 115°C  
diF/dt = 290 A/µs  
VD = 3300 V  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
TBD  
0
100 200 300 400 500 600 700 800 900 1000  
IFQ [A]  
Fig. 13 Upper scatter range of diode turn-off energy  
Fig. 14 Upper scatter range of diode turn-off energy  
per pulse vs. turn-off current  
per pulse vs decay rate of on-state current  
Irr [A]  
500  
Tj = 115°C  
diF/dt = 290 A/µs  
VD = 3300 V  
450  
400  
350  
300  
250  
200  
TBD  
0
100 200 300 400 500 600 700 800 900 1000  
IFQ [A]  
Fig. 15 Upper scatter range of diode reverse recovery  
Fig. 16 Upper scatter range of diode reverse recovery  
charge vs decay rate of on-state current  
current vs decay rate of on-state current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 9 of 13  
5SHX 10H6010  
TBD  
Fig. 17 Diode Safe Operating Area  
Fig. 18 Max. Gate Unit input power in chopper mode  
TBD  
Fig. 19 Burst capability of Gate Unit  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 10 of 13  
5SHX 10H6010  
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise  
1) VGIN (AC or DC+)  
2) VGIN (AC or DC+)  
3) Cathode  
4) VGIN (AC or DC-)  
5) VGIN (AC or DC-)  
Fig. 21 Detail A: pin out of supply connector X1.  
RC-IGCT  
Gate Unit  
RC-GCT  
Anode  
Supply (VGIN  
)
X1  
Internal Supply (No galvanic isolation to power circuit)  
LED1  
Gate  
LED2  
LED3  
LED4  
Turn-  
On  
Circuit  
Logic  
Command Signal (Light)  
Status Feedback (Light)  
Cathode  
Rx  
CS  
SF  
Monitoring  
Turn-  
Off  
Circuit  
Tx  
Fig. 22 Block diagram  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 11 of 13  
5SHX 10H6010  
Turn-on  
External  
Turn-off  
Retrigger pulse  
dIT/dt  
VDM  
ITM  
VDSP  
VD  
VD  
IT  
0.9 VD  
IT  
0.4 ITGQ  
0.1 VD  
VD  
CS  
SF  
CS  
SF  
CS  
SF  
tretrig  
tdoff SF  
tdoff  
tdon SF  
tdon  
tr  
ton  
toff  
Fig. 23 General current and voltage waveforms with IGCT-specific symbols  
VF(t), IF (t)  
dIF/dt  
IF (t)  
-dIF/dt  
IF (t)  
VFR  
Qrr  
VF (t)  
VF (t)  
t
tfr  
tfr (typ) 10 µs  
VR (t)  
IRM  
Fig. 24 General current and voltage waveforms with Diode-specific symbols  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1226-05 Aug 07  
page 12 of 13  
5SHX 10H6010  
Li  
LCL  
DUT  
GCT - part  
DCL  
Rs  
CCL  
VDC  
DUT  
Diode - part  
LLoad  
Fig. 25 Test circuit  
Related documents:  
5SYA 2031  
5SYA 2032  
5SYA 2036  
5SYA 2046  
5SYA 2048  
5SYA 2051  
5SZK 9107  
Applying IGCT Gate Units  
Applying IGCTs  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Failure rates of IGCTs due to cosmic rays  
Field measurements on High Power Press Pack Semiconductors  
Voltage ratings of high power semiconductors  
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory  
Please refer to http://www.abb.com/semiconductors for current version of documents.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1226-05 Aug 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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