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5SHY35L4510

型号：

5SHY35L4510

描述：

不对称的集成网关换流晶闸管[ Asymmetric Integrated Gate- Commutated Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

434 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
=
=
=
=
=
=
4500 V  
4000 A  
32×103 A  
1.4 V  
Asymmetric Integrated Gate-  
Commutated Thyristor  
V(T0)  
rT  
5SHY 35L4510  
0.325  
mW  
VDC-link  
2800 V  
Doc. No. 5SYA1232-02 June 07  
· High snubberless turn-off rating  
· Optimized for medium frequency (<1 kHz) and  
wide temperature range  
· High reliability  
· High electromagnetic immunity  
· Simple control interface with status feedback  
· AC or DC supply voltage  
· Contact factory for series connection  
Blocking  
Maximum rated values 1)  
Conditions  
Symbol  
min  
min  
typ  
typ  
max  
4500  
2800  
Unit  
V
Parameter  
Rep. peak off-state voltage VDRM  
Gate Unit energized  
Permanent DC voltage for VDC-link  
100 FIT failure rate of GCT  
Ambient cosmic radiation at sea level  
in open air. Gate Unit energized  
V
Reverse voltage  
VRRM  
IGCT in  
off-state  
on-state  
17  
10  
V
V
Characteristic values  
Conditions  
max  
Unit  
Parameter  
Symbol  
Rep. peak off-state current IDRM  
VD = VDRM, Gate Unit energized  
50  
mA  
Mechanical data (see Fig. 11, 12)  
Maximum rated values 1)  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Mounting force  
Characteristic values  
Parameter  
Fm  
36  
40  
44  
kN  
Conditions  
min  
typ  
max  
Unit  
mm  
mm  
kg  
Symbol  
Pole-piece diameter  
Dp  
± 0.1 mm  
85  
Housing thickness  
Weight  
H
25.3  
25.8  
2.9  
m
Surface creepage distance Ds  
Anode to Gate  
Anode to Gate  
± 1.0 mm  
33  
10  
mm  
mm  
mm  
mm  
mm  
Air strike distance  
Length  
Da  
l
439  
40  
Height  
h
± 1.0 mm  
Width IGCT  
w
± 1.0 mm  
173  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SHY 35L4510  
GCT Data  
On-state (see Fig. 3, 4, 5, 6, 14, 15)  
Maximum rated values 1)  
Conditions  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Max. average on-state  
current  
IT(AV)M  
Half sine wave, TC = 85 °C,  
Double side cooled  
1700  
A
Max. RMS on-state current IT(RMS)  
2670  
32×103  
A
A
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 10 ms, Tj = 125 °C, sine wave  
after surge: VD = VR = 0 V  
Limiting load integral  
I2t  
5.12×106 A2s  
21×103  
Max. peak non-repetitive  
surge on-state current  
ITSM  
tp = 30 ms, Tj = 125 °C, sine wave  
after surge: VD = VR = 0 V  
A
Limiting load integral  
I2t  
6.62×106 A2s  
Stray inductance between LD  
GCT and antiparallel diode  
Only relevant for applications with  
antiparallel diode to the IGCT  
300  
nH  
Critical rate of rise of on-  
state current  
diT/dtcr For higher diT/dt and current lower  
than 100 A an external retrigger puls  
is required.  
200  
A/µs  
Characteristic values  
Parameter  
Conditions  
min  
typ  
max  
2.7  
Unit  
V
Symbol  
On-state voltage  
VT  
IT = 4000 A, Tj = 125 °C  
2.35  
Threshold voltage  
Slope resistance  
V(T0)  
rT  
Tj = 125 °C  
IT = 1000...4000 A  
1.4  
V
0.325  
mW  
Turn-on switching (see Fig. 14, 15)  
Maximum rated values 1)  
Conditions  
Symbol  
min  
min  
typ  
typ  
max  
Unit  
Parameter  
Critical rate of rise of on-  
state current  
diT/dtcr f = 0..500 Hz, Tj = 125 °C,  
1000  
A/µs  
VD = 2800 V, ITM £ 4000 A  
Characteristic values  
Parameter  
Conditions  
max  
3.5  
7
Unit  
µs  
Symbol  
Turn-on delay time  
tdon  
VD = 2800 V, Tj = 125 °C  
IT = 4000 A, di/dt = VD / Li  
Li = 5 µH  
Turn-on delay time status  
feedback  
tdon SF  
µs  
CCL = 10 µF, LCL = 0.3 µH  
Rise time  
tr  
1
µs  
J
Turn-on energy per pulse  
Eon  
1.5  
Turn-off switching (see Fig. 7, 8, 10, 14, 15)  
Maximum rated values 1)  
Conditions  
min  
min  
typ  
max  
Unit  
Parameter  
Symbol  
Max. controllable turn-off  
current  
ITGQM  
4000  
A
VDM £ VDRM, Tj = 125°C,  
VD = 2800 V, RS = 0.65 W,  
CCL = 10 µF, LCL £ 0.3 µH  
Characteristic values  
Parameter  
Conditions  
typ  
max  
Unit  
µs  
Symbol  
Turn-off delay time  
tdoff  
VD = 2800 V, Tj = 125 °C  
7
7
VDM £ VDRM, RS = 0.65 W  
Turn-off delay time status  
feedback  
tdoff SF  
µs  
ITGQ = 4000 A, Li = 5 µH  
CCL = 10 µF, LCL = 0.3 µH  
Turn-off energy per pulse  
Eoff  
19.5  
22  
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 2 of 9  
5SHY 35L4510  
Gate Unit Data  
Power supply (see Fig. 2, 9, 10, 12, 13)  
Maximum rated values 1)  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Gate Unit voltage  
(Connector X1)  
VGIN,RMS AC square wave amplitude (15 kHz  
- 100kHz) or DC voltage. No  
28  
40  
V
galvanic isolation to power circuit.  
Min. current needed to power IGIN Min Rectified average current  
2.1  
A
up the Gate Unit  
see application note 5SYA 2031  
Gate Unit power consumption PGIN Max  
100  
W
Characteristic values  
Conditions  
Symbol  
min  
typ  
max  
Unit  
Parameter  
Internal current limitation  
IGIN Max Rectified average current limited by  
the Gate Unit  
8
A
2)  
Optical control input/output  
Maximum rated values 1)  
Conditions  
min  
40  
typ  
typ  
max  
Unit  
µs  
Parameter  
Symbol  
Min. on-time  
ton  
Min. off-time  
Characteristic values  
Parameter  
toff  
40  
µs  
Conditions  
min  
max  
-1  
Unit  
dBm  
dBm  
dBm  
dBm  
ns  
Symbol  
Optical input power  
Pon CS  
-15  
CS: Command signal  
Poff CS SF: Status feedback  
Optical noise power  
-45  
-1  
Valid for 1mm plastic optical fiber  
Optical output power  
Optical noise power  
Pon SF  
Poff SF  
-19  
(POF)  
-50  
400  
1100  
Pulse width threshold  
External retrigger pulse width  
tGLITCH Max. pulse width without response  
tretrig  
600  
ns  
2) Do not disconnect or connect fiber optic cables while light is on.  
Connectors 2) (see Fig. 11, 12, 13)  
Description  
Parameter  
Symbol  
Gate Unit power connector  
X1  
AMP: MTA-156, Part Number 641210-5 3)  
Agilent, Type HFBR-2528 4)  
Agilent, Type HFBR-1528 4)  
LWL receiver for command signal  
LWL transmitter for status feedback  
CS  
SF  
2) Do not disconnect or connect fiber optic cables while light is on.  
3) AMP, www.amp.com  
4) Agilent Technologies, www.semiconductor.agilent.com  
Visual feedback (see Fig. 13)  
Description  
Symbol  
Color  
Parameter  
Gate OFF  
LED1 "Light" when GCT is off  
(green)  
(yellow)  
(red)  
Gate ON  
LED2 "Light" when gate-current is flowing  
LED3 "Light" when not ready / Failure  
LED4 "Light" when power supply is within specified range  
Fault  
Power supply voltage OK  
(green)  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 3 of 9  
5SHY 35L4510  
Thermal  
Maximum rated values 1)  
Conditions  
min  
-40  
-40  
-40  
typ  
typ  
max  
Unit  
°C  
Parameter  
Symbol  
Junction operating temperature  
Tvj  
125  
60  
Storage temperature range  
Tstg  
Ta  
°C  
Ambient operational temperature  
Characteristic values  
Parameter  
50  
°C  
Conditions  
min  
max  
8.5  
3
Unit  
K/kW  
K/kW  
Symbol  
Thermal resistance junction-to-case  
of GCT  
Rth(j-c)  
Double side cooled  
Thermal resistance case-to-  
heatsink of GCT  
Rth(c-h)  
Double side cooled  
Analytical function for transient thermal  
impedance:  
n
Z (t)= R  
i
(1- e-t/t i )  
å
th(j-c)  
i=1  
i
1
2
3
4
Ri(K/kW)  
5.562  
0.5119  
1.527  
0.868  
0.0091  
0.545  
0.0024  
0.0896  
ti(s)  
Fig. 1 Transient thermal impedance (junction-to-  
case) vs. time (max. values)  
Max. Turn-off current for Lifetime operation  
·
·
·
calculated lifetime of on-board capacitors  
20 years  
with slightly forced air cooling (air velocity  
> 0.5 m/s)  
strong air cooling allows for increased  
ambient temperature  
Fig. 2 Max. turn-off current vs. frequency for lifetime  
operation  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 4 of 9  
5SHY 35L4510  
Max. on-state characteristic model:  
Max. on-state characteristic model:  
VT125  
VT25  
= A +B ×IT +C ×ln(IT +1)+D × IT  
= A +B ×IT +C ×ln(IT +1)+D × IT  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Tvj  
Valid for iT = 300 – 30000 A  
Valid for iT = 300 – 30000 A  
B25 C25  
622.7×10-3 163.4×10-6 141.1×10-3  
A25  
D25  
A125  
B125  
C125  
218.4×10-3  
D125  
0.0  
-16.0×10-3 226.6×10-6  
0.0  
Fig. 3 GCT on-state voltage characteristics  
Fig. 4 GCT on-state voltage characteristics  
Fig. 5 Surge on-state current vs. pulse length, half-  
Fig. 6 Surge on-state current vs. number of pulses,  
sine wave  
half-sine wave, 10 ms, 50Hz  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 5 of 9  
5SHY 35L4510  
Fig. 7 GCT turn-off energy per pulse vs. turn-off  
Fig. 8 Safe Operating Area  
current  
Fig. 9 Max. Gate Unit input power in chopper mode  
Fig. 10 Burst capability of Gate Unit  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 6 of 9  
5SHY 35L4510  
Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise  
1) VGIN (AC or DC+)  
2) VGIN (AC or DC+)  
3) Cathode  
4) VGIN (AC or DC-)  
5) VGIN (AC or DC-)  
Fig. 12 Detail A: pin out of supply connector X1  
AS-IGCT  
Gate Unit  
AS-GCT  
Supply (VGIN  
)
X1  
Anode  
Internal Supply (No galvanic isolation to power circuit)  
LED1  
Gate  
LED2  
LED3  
LED4  
Turn-  
On  
Circuit  
Logic  
Command Signal (Light)  
Status Feedback (Light)  
Cathode  
Rx  
CS  
SF  
Monitoring  
Turn-  
Off  
Circuit  
Tx  
Fig. 13 Block diagram  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 7 of 9  
5SHY 35L4510  
Turn-on  
External  
Turn-off  
Retrigger pulse  
dIT/dt  
VDM  
ITM  
VDSP  
VD  
VD  
IT  
0.9 VD  
IT  
0.4 ITGQ  
0.1 VD  
VD  
CS  
SF  
CS  
SF  
CS  
SF  
tretrig  
tdoff SF  
tdoff  
tdon SF  
tdon  
tr  
ton  
toff  
Fig. 14 General current and voltage waveforms with IGCT - specific symbols  
Li  
LCL  
LD  
DUT  
Rs  
CCL  
VDC  
LLoad  
Fig. 15 Test circuit  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1232-02 June 07  
page 8 of 9  
5SHY 35L4510  
Related documents:  
5SYA 2031  
5SYA 2032  
5SYA 2036  
5SYA 2046  
5SYA 2048  
5SYA 2051  
5SZK 9107  
Applying IGCT Gate Units  
Applying IGCTs  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Failure rates of IGCTs due to cosmic rays  
Field measurements on High Power Press Pack Semiconductors  
Voltage ratings of high power semiconductors  
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory  
Please refer to http://www.abb.com/semiconductors for current version of documents.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1232-02 June 07  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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