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WTF8A80

型号:

WTF8A80

描述:

双向晶闸管[ Bi-Directional Triode Thyristor ]

品牌:

WINSEMI[ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]

页数:

5 页

PDF大小:

498 K

WTF8A80  
Bi-Directional Triode Thyristor  
Features  
Repetitive Peak off -State Voltage:800V  
R.M.S On-State Current(IT(RMS)=8A)  
High Commutation dv/dt  
Isolation Voltage(VISO=1500V AC)  
General Description  
This device is fully isolated package suitable for AC switching  
application , phase control application such as fan speed and  
temperature modulation control, lighting control and static  
switching relay.This device is approved to comply with  
applicable requirements by underwriters laboratories lnc.  
By using an internal ceramic pad, the TO220F series provides  
voltage insulated tab (rated at 2500V RMS) complying with UL  
standards (file ref.:E347423)  
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)  
symbol  
VDRM  
Parameter  
Repetitive Peak Off-State Voltage  
R.M.S On-State Current  
condition  
Ratings  
800  
Units  
V
A
IT(RMS)  
Tc=89℃  
8.0  
One Cycle, 50Hz/60Hz,  
Peak,Non-Repetitive  
ITSM  
Surge On-State Current  
80/88  
A
I2t  
PGM  
PG(AV)  
IGM  
I2t  
32  
5.0  
A2s  
W
W
A
Peak Gate Power Dissipation  
Average Gate Power dissipation  
Peak Gate Current  
0.5  
2.0  
VGM  
VISO  
TJ  
Peak Gate Voltage  
10  
V
Isolation Breakdown Voltage(R.M.S.)  
Operating Junction Temperature  
Storage Temperature  
Mass  
A.C.1minute  
1500  
-40~125  
-40~150  
2.0  
V
g
TSTG  
Rev.A Feb.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.  
WTF8A80  
Electrical Characteristics(Tc=25unless otherwise noted)  
Ratings  
Symbol  
Items  
conditions  
Unit  
Min  
-
Typ  
Max  
2.0  
Repetitive Peak Off-State  
VD=VDRM,Single Phase, Half  
Wave TJ=125℃  
IDRM  
VTM  
-
mA  
V
Current  
Peak On-State Voltage  
IT=12A,Inst.Measurement  
-
-
-
-
-
-
-
-
-
1.4  
30  
30  
30  
1.5  
1.5  
1.5  
-
I+  
-
GT1  
I-GT1  
I-GT3  
Gate Trigger Current  
Gate Trigger Voltage  
VD=6V,RL=10Ω  
VD=6V,RL=10Ω  
-
mA  
V
-
V+  
-
-
GT1  
V-GT1  
V-GT3  
VGD  
-
Non-Trigger Gate Voltage  
Critical Rate of Rise Off-State  
Voltage at Commutation  
Holding Current  
TJ=125℃,VD=1/2VDRM  
TJ=125℃,[di/dt]c=-4.0A/ms,  
VD=2/3VDRM  
0.2  
V
(dv/dt)c  
10  
-
-
V/µs  
IH  
-
-
15  
-
-
mA  
Rthj-cThermal Impedance  
Junction to case  
3.7  
℃/W  
2/5  
Steady, keep you advance  
WTF8A80  
Fig1.Gate Characteristics  
Fig.2 On-State Voltage  
Fig.3 On State Current vs.Maximum  
Power Dissipation  
Fig.4 On State Current vs.Allowable  
Case Temperature  
Fig.5 surge On-State Current Rating  
(Non-Repetitive)  
Fig.6 Gate Trigger Voltage vs.  
Junction Temperature  
3/5  
Steady, keep you advance  
WTF8A80  
Fig.8 Transient Thermal Impedance  
Fig.7 Gate Trigger Current vs.  
Junction Temperature  
Fig.9 Gate Trigger Characteristics Test Circuit  
4/5  
Steady, keep you advance  
WTF8A80  
TO-220F Package Dimension  
Unit:mm  
5/5  
Steady, keep you advance  
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