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WTF16A60H

型号:

WTF16A60H

描述:

双向晶闸管[ Bi-Directional Triode Thyristor ]

品牌:

WINSEMI[ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]

页数:

4 页

PDF大小:

253 K

WTF16A60H  
Bi-Directional Triode Thyristor  
Features  
■ Repetitive Peak off-State Voltage: 600V  
■ R.M.S On-State Current(IT(RMS)=16A)  
■ Isolation Voltage ( VISO = 1500V AC )  
■ High Commutation dV/dt.  
■ High Junction temperature(TJ=150)  
General Description  
Winsemi Triac WTF16A60H is designed for full wave AC control applications.  
It can be used as an ON/OFF function or for phase control operation.  
By using an internal ceramic pad, the TO220F series provides voltage  
insulated tab (rated at 2500V RMS) complying with UL standards (file  
ref.:E347423)  
Typical Application  
■ Home Appliances : Washing Machines, Vacuum Cleaners, Rice  
Cookers, Micro Wave Ovens, Hair Dryers, other  
control applications  
A1  
A2  
G
TO220F  
■ Industrial Use :  
SMPS, Copier Machines, Motor Controls,  
Dimmer, SSR, Heater Controls, Vending Machines,  
other control applications  
Absolute Maximum Ratings (Tj=25unless otherwise specified)  
Symbol  
Parameter  
Condition  
Ratings Units  
V
Repetitive Peak Off-State Voltage  
600  
V
DRM/VRRM  
T = 1118 °C  
I
R.M.S On-State Current  
Surge On-State Current  
16  
A
A
J
T(RMS)  
50/60Hz, One cycle, Peak value, non-repetitive  
I
155/170  
TSM  
I2t  
2
2
120  
5
I t  
A s  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
W
W
A
GM  
P
0.5  
G(AV)  
I
2.0  
GM  
V
Peak Gate Voltage  
7.0  
V
GM  
T
Operating Junction Temperature  
Storage Temperature  
-40~+150  
-40~+150  
J
T
STG  
Thermal Characteristics  
Symbol  
Value  
Typ  
Parameter  
Units  
Min  
-
Max  
3
RQJC  
RQJA  
Thermal resistance, Junction-to-Case  
Thermal resistance, Junction-to-Ambient  
-
/W  
/W  
-
-
150  
Rev. A Feb.2011  
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.  
WTF16A60H  
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)  
Characteristics  
Symbol  
IDRM/IRRM  
VTM  
Min Typ. Max Unit  
off-state leakage current  
TJ=150℃  
-
-
-
3
mA  
V
(VAK= VDRM/VRRM Single phase, half wave)  
Forward “On” voltage (IT=25A, Inst. Measurement)  
1.2  
1.4  
T2+,G+  
T2+,G-  
T2-,G-  
T2+,G+  
T2+,G-  
T2-,G-  
-
-
-
-
-
-
-
-
-
-
-
-
10  
10  
Gate trigger current (continuous dc)  
(VAK = 6 Vdc, RL = 10 Ω)  
IGT  
mA  
V
10  
1.5  
1.5  
1.5  
Gate Trigger Voltage (Continuous dc)  
(VAK = 6 Vdc, RL = 10 Ω)  
)
VGT  
Gate threshold Voltage  
VGD  
TJ=150℃  
TJ=150℃  
0.1  
5
-
-
-
-
V
=1/2VDRM  
,
Critical Rate of Rise of Off-State Voltage at Commutation  
(dv/dt)C  
V/μs  
(VD=0.67VDRM ;(d/d)c=-8A/ms)  
IH  
IL  
Holding Current  
latching current  
-
-
25  
25  
-
-
mA  
mA  
2 /4  
Steady, keep you advance  
WTF16A60H  
3 /4  
Steady, keep you advance  
WTF16A60H  
TO-220F Package Dimension  
Unit: mm  
4 /4  
Steady, keep you advance  
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