Bi-Directional Triode Thyristor
Features
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◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM
High Commutation dv/dt
)
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◆
Isolation Voltage ( VISO = 1500V AC )
High Junction temperature(TJ=150℃)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
A1
A2
TO220F
G
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parame
Condition
Ratings Units
V
Repetitive Peak Off-State Voltage
R.M.S On-State Current
600
V
A
DRM/VRRM
IT(RMS)
TJ = 105 °C
4.0
30
31
One cycle, Peak value,
50Hz
60Hz
ITSM
Surge On-State Current
A
non-repetitive full cycle
I2t
2
2
5.1
I t
A s
PGM
PG(AV)
IGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
5
1
W
W
A
TJ = 125 °C
TJ = 125 °C
4.0
VGM
TJ
Peak Gate Voltage
7.0
V
Operating Junction Temperature
Storage Temperature
-40~+150
-40~+150
℃
℃
TSTG
Thermal Characteristics
Symbol
Parameter
Value
Units
℃/W
RθJc
Thermal Resistance Junction to Case(DC)
4
RθJA
Thermal Resistance Junction to Ambient(DC)
60
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
