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WTK9971

型号:

WTK9971

描述:

表面贴装双N沟道增强型MOSFET[ Surface Mount Dual N-Channel Enhancement Mode MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

5 页

PDF大小:

591 K

WTK9971  
Surface Mount Dual N-Channel  
Enhancement Mode MOSFET  
DRAIN CURRENT  
5 AMPERES  
P b  
Lead(Pb)-Free  
DRAIN SOURCE VOLTAGE  
60 VOLTAGE  
Features:  
*Super high dense cell design for low RDS(ON)  
RDS(ON)<50mΩ @VGS = 10V  
RDS(ON)<60mΩ @VGS = 4.5V  
*Simple Drive Requirement  
*Dual N MOSFET Package  
*SO-8 Package  
1
SO-8  
Maximum Ratings (TA=25 C Unless Otherwise Specified)  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Value  
60  
Unite  
V
V
V
V
DS  
+
20  
GS  
-
(1)  
Continuous Drain Current (TA =25˚C)  
(TA =70˚C)  
5.0  
I
D
A
3.2  
(2)  
30  
2
Pulsed Drain Current  
I
A
DM  
(1)  
P
Power Dissipation  
(TA =25˚C)  
W
D
(1)  
Maximax Junction-to-Ambient  
R
62.5  
C/W  
θJA  
Operating Junction and Storage  
Temperature Range  
T ,Tstg  
J
-55 to 150  
C
Device Marking  
WTK9971=9971SS  
WEITRON  
http://www.weitron.com.tw  
19-Nov-08  
1/5  
WTK9971  
Electrical Characteristics (T =25 C Unless otherwise noted)  
A
Parameter  
Symbol  
Min.  
Typ.  
-
Max.  
Unit  
V
Test Conditions  
VGS=0, ID=250uA  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature Coefficient  
Gate Threshold Voltage  
60  
-
BVDSS  
BVDSS / Tj  
-
1.0  
-
0.06  
-
-
V/  
Reference to 25 , ID=1mA  
VDS=VGS, ID=250uA  
3.0  
V
VGS(th)  
gfs  
Forward Transconductance  
Gate-Source Leakage Current  
Drain-Source Leakage Current(Tj=25  
7
-
S
V
DS=10V, ID=5A  
-
-
±100  
nA  
uA  
uA  
IGSS  
VGS= ±25V  
)
)
-
-
1
25  
50  
60  
-
VDS=60V, VGS=0  
VDS=48V, VGS=0  
VGS=10V, ID=5A  
VGS=4.5V, ID=2.5A  
IDSS  
Drain-Source Leakage Current(Tj=70  
-
-
-
-
Static Drain-Source On-Resistance2  
m  
RDS(ON)  
-
-
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain (“Miller”) Change  
Turn-on Delay Time2  
Rise Time  
-
32.5  
4.9  
8.8  
9.6  
10  
30  
5.5  
1658  
156  
109  
Qg  
Qgs  
Qgd  
Td(on)  
Tr  
ID=5A  
nC  
-
-
VDS=48V  
VGS=10V  
-
-
-
-
VDS=30V  
ID=5A  
VGS=10V  
RG=3.3fl  
RD=6fl  
-
-
ns  
Turn-off Delay Time  
Fall Time  
-
-
Td(off)  
Tf  
-
-
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
-
-
Ciss  
Coss  
Crss  
VGS=0V  
pF  
-
-
VDS=25V  
f=1.0MHz  
-
-
Source-Drain Diode  
Parameter  
Symbol  
Min.  
Typ.  
-
Max.  
Unit  
V
Test Conditions  
IS=1.6A, VGS=0V  
Forward On Voltage2  
-
-
-
1.2  
VSD  
Trr  
Reverse Recovery Time  
Reverse Recovery Charge  
29.2  
48  
-
-
ns  
IS=5A, VGS=0V  
dI/dt=100A/?s  
Qrr  
nC  
Notes: 1. Pulse width limited by Max. junction temperature.  
2. Pulse width 300us, duty cycle 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.  
WEITRON  
http://www.weitron.com.tw  
2/5  
19-Nov-08  
WTK9971  
WE ITR ON  
WEITRON  
http://www.weitron.com.tw  
3/5  
19-Nov-08  
WTK9971  
WE ITR ON  
WEITRON  
http://www.weitron.com.tw  
4/5  
19-Nov-08  
WTK9971  
SO-8 Package Outline Dimensions  
Unit:mm  
1
θ
L
E1  
7(4X)  
D
(4X)  
7
B
e
eB  
MILLIMETERS  
SYMBOLS  
MIN  
1.35  
0.10  
0.35  
0.18  
4.69  
3.56  
5.70  
MAX  
1.75  
0.20  
0.45  
0.23  
4.98  
4.06  
6.30  
A
A1  
B
C
D
E1  
eB  
e
1.27 BSC  
0.60  
0
0.80  
8
L
θ
WEITRON  
http://www.weitron.com.tw  
5/5  
19-Nov-08  
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