WTK9431
(T =25°C Unless otherwise noted)
Electrical Characteristics
A
Min
Typ
Max
Characteristic
Symbol
Unit
Static
Drain-Source Breakdown Voltage
GS
V
(BR)DSS
-
-
-
-
V
V
-20
-0.4
-
V =0V, I =-250 µA
D
Gate-Source Threshold Voltage
V =V , I =-250 µA
V
-1.0
GS (th)
D
DS GS
Gate-Source Leakage Current
I
+
GSS
100
nA
µA
+
V =0V,V = 8V
DS
GS
Zero Gate Voltage Drain Current
V =-16V,V =0V
-
-
-1
-25
I
DSS
DS
GS
V =-12V,V =0V
DS
GS
(2)
Drain-Source On-Resistance
V =-10V, I =-5.3A
RDS(on)
-
-
-
-
mΩ
S
GS
D
=-4.5V, I =-4.2A
V
GS
D
(2)
Forward Transconductance
V =-5V, I =-3.5A
g
fs
-
6.5
-
DS
D
Dynamic
Input Capacitance
C
-
-
-
iss
-
-
405
170
45
V =-10V,V =0V, f=1MHZ
DS
GS
Output Capacitance
V =-10V,V =0V, f=1MHZ
C
oss
F
P
DS
GS
Reverse Transfer Capacitance
V =-10V,V =0V, f=1MHZ
C
rss
-
DS
GS
Switching
Turn-On Delay Time
(2)
t
-
-
-
-
-
-
-
nS
nS
d(on)
6.5
20
V
= -5V, I = -1A, V = -4.5V, R = 6Ω
DD
D GS G
Rise Time
= -5V, I = -1A, V = -4.5V, R = 6Ω
t
r
V
DD
D
GS
G
Turn-O Time
= -5V, I = -1A, V = -4.5V, R = 6Ω
t
)
nS
nS
31
21
6
-
-
V
DD
D
GS
G
Fall Time
= -5V, I = -1A, V = -4.5V, R = 6Ω
t
f
V
DD
D
GS
G
(2)
Total Gate Charge
V =-5V, I =-5.3A,V =-4.5V
8.5
-
Qg
nc
DS
D
GS
Gate-Source Charge
V =-5V, I =-5.3A,V =-4.5V
Qgs
Qgd
0.8
1.3
nc
nc
-
-
DS
D
GS
Gate-Drain Charge
V =-5V, I =-5.3A,V =-4.5V
-
DS
D
GS
(2)
Diode Forward Voltage
Drain-Source
-
-
-1.2
-2.1
VSD
V
V
=0V, I =-2.1A
GS
S
Continuous Source Current (Body Diode)
V =V =0V, V =-1.2V
D
-
-
IS
A
G
S
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300µs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/5
07-Nov-08
