WTK4424
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
BVDSS
Tj
Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250uA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
0.02
-
-
-
V
BVDSS
/
V/
-
1.0
-
Reference to 25 , ID=1mA
VDS=VGS, ID=250uA
3.0
-
V
VGS(th)
gfs
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25
21
-
S
V
DS=10V, ID=13A
100
1
-
nA
uA
uA
IGSS
VGS 20V
=
)
)
-
-
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=13A
VGS=4.5V, ID=10A
IDSS
Drain-Source Leakage Current(Tj=70
-
-
25
9
-
-
Static Drain-Source On-Resistance2
m
RDS(ON)
-
-
14
35
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
23
6
Qg
Qgs
Qgd
Td(on)
Tr
ID=13A
nC
-
VDS=24V
VGS=4.5V
-
15
13
9
-
-
-
VDS=25V
ID=1A
-
-
ns VGS=10V
RG=3.3
Turn-off Delay Time
Fall Time
-
35
17
-
Td(off)
Tf
RD=15
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
1920 3070
Ciss
Coss
Crss
Rg
VGS=0V
pF
-
410
300
0.9
-
-
-
VDS=25V
f=1.0MHz
-
-
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
VSD
Trr
Min.
Typ.
-
Max.
Unit
V
Test Conditions
Forward On Voltage2
-
-
-
1.2
IS=2.1A, VGS=0V
Reverse Recovery Time2
33
26
-
-
ns
IS=13A, VGS=0V
dI/dt=100A/fls
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/5
01-Dec-08
