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WTK6679

型号:

WTK6679

描述:

表面贴装P沟道增强型MOSFET[ Surface Mount P-Channel Enhancement Mode MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

5 页

PDF大小:

1084 K

WTK6679  
Surface Mount P-Channel  
Enhancement Mode MOSFET  
DRAIN CURRENT  
-14 AMPERES  
P b  
Lead(Pb)-Free  
DRAIN SOURCE VOLTAGE  
-30 VOLTAGE  
Features:  
* Super high dense  
* Cell design for low RDS(ON)  
* R  
* R  
<10mΩ@VGS = -10V  
<13mΩ@VGS = -4.5V  
DS(ON)  
DS(ON)  
* Simple Drive Requirement  
* Lower On-resistance  
* Fast Switching  
1
SOP-8  
Description:  
The WTK6679 provide the designer with the best combination  
of fast switching, ruggedized device design, low on-resistance  
and cost-effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Maximum Ratings (T =25˚C Unless Otherwise Specified)  
A
Rating  
Symbol  
Value  
Unite  
-30  
25  
Drain-Source Voltage  
V
V
V
DS  
V
Gate-Source Voltage  
GS  
Continuous Drain Current  
-14  
-8.9  
(TA =25°C)  
(TA =70°C)  
I
D
A
(1)  
-50  
2.5  
50  
Pulsed Drain Current  
I
A
DM  
(TA =25°C)  
Power Dissipation  
P
W
D
Maximax Junction-to-Ambient  
R
°C/W  
θ
JA  
Operating Junction Temperature Range  
Storage Temperature Range  
+150  
T
°
°
C
C
J
Tstg  
-55 to +150  
Device Marking  
WTK6679=6679SC  
WEITRON  
http://www.weitron.com.tw  
1/5  
03-May-07  
WTK6679  
Electrical Characteristics (T =25°C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
Static  
Drain-Source Breakdown Voltage  
GS  
V
(BR)DSS  
-
-
-
-
V
V
-30  
-1.0  
-
V
=0V, I =-250 μA  
D
Gate-Source Threshold Voltage  
=V , I =-250 μA  
V
-3.0  
GS (th)  
V
D
DS GS  
Gate-Source Leakage Current  
I
GSS  
100  
nA  
+
=0V,V = 25V  
GS  
V
DS  
Zero Gate Voltage Drain Current  
I
V
V
=-30V,V =0V  
-1  
-25  
-
μA  
-
DSS  
DS  
GS  
=-24V,V =0V  
DS  
GS  
Drain-Source On-Resistance  
RDS (on)  
-
-
-
-
V
GS  
V
GS  
=-10V, I =-14A  
mΩ  
S
D
=-4.5V, I =-11A  
13  
-
D
Forward Transconductance  
=-10V , I =-14A  
g
fs  
26  
-
V
DS  
D
Dynamic  
Input Capacitance  
C
iss  
2860  
950  
-
-
4580  
V
=-25V,V =0V, f=1MHZ  
DS  
GS  
Output Capacitance  
=-25V,V =0V, f=1MHZ  
C
-
oss  
F
P
V
DS  
GS  
Reverse Transfer Capacitance  
=-25V,V =0V, f=1MHZ  
C
rss  
-
640  
-
V
DS  
GS  
Switching  
(2)  
urn-On Delay Time  
T
t
-
-
-
-
-
-
-
nS  
nS  
d(on)  
13  
11  
= -15V, I = -1A, V = -10V, R = 3.3Ω, RD = 15Ω  
V
DS  
D
GS  
G
Rise Time  
= -15V, I = -1A, V = -10V, R = 3.3Ω, RD = 15Ω  
t
r
V
DS  
D
GS  
G
urn-O Time  
T
V
t
nS  
nS  
58  
43  
)
-
-
= -15V, I = -1A, V = -10V, R = 3.3Ω, RD = 15Ω  
DS  
D
GS  
G
Fall Time  
t
f
= -15V, I = -1A, V = -10V, R = 3.3Ω, RD = 15Ω  
V
DS  
D
GS  
G
(2)  
otal Gate Charge  
T
60  
-
Qg  
37  
nc  
=-24V, I =-14A, V =-4.5V  
V
GS  
DS  
D
ate-Source Charge  
G
Qgs  
Qgd  
3
nc  
nc  
-
-
=-24V, I =-14A, V =-4.5V  
V
GS  
DS  
D
ate-Drain Charge  
G
25  
-
-
=-24V, I =-14A, V =-4.5V  
V
GS  
DS  
D
(2)  
Forward On Voltage  
=0V, I =-2A  
-
-
-1.2  
VSD  
Trr  
V
V
GS  
S
(2)  
Reverse Recovery Time  
=0V, I =-14A,dl/dt=100A/μs  
48  
46  
-
nS  
V
GS  
S
Reverse Recovery Charge  
=0V, I =-14A,dl/dt=100A/μs  
-
-
Qrr  
nC  
V
GS  
S
Notes:  
1. Pulse width limited by Max. junction temperature.  
2. Pulse width ≤ 300us, duty cycle ≤ 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.  
WEITRON  
http://www.weitron.com.tw  
2/5  
03-May-07  
WTK6679  
WEITRON  
Characteristics Curve  
WEITRON  
http://www.weitron.com.tw  
03-May-07  
3/5  
WTK6679  
WEITRON  
WEITRON  
http://www.weitron.com.tw  
03-May-07  
4/5  
WTK6679  
SOP-8 Package Outline Dimensions  
Unit:mm  
1
θ
L
E1  
D
7(4X)  
(4X)  
7
e
B
eB  
MILLIMETERS  
SYMBOLS  
MIN  
1.35  
0.10  
0.35  
0.18  
4.69  
3.56  
5.70  
MAX  
1.75  
0.20  
0.45  
0.23  
4.98  
4.06  
6.30  
A
A1  
B
C
D
E1  
eB  
e
1.27 BSC  
0.60  
0˚  
0.80  
8˚  
L
θ
WEITRON  
http://www.weitron.com.tw  
03-May-07  
5/5  
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